Photoinduced defects in semiconductors:
This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of cer...
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| Format: | E-Book |
| Sprache: | Englisch |
| Veröffentlicht: |
Cambridge
Cambridge University Press
1996
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| Schriftenreihe: | Cambridge studies in semiconductor physics and microelectronic engineering
4 |
| Links: | https://doi.org/10.1017/CBO9780511622533 |
| Zusammenfassung: | This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the properties of DX and EL2 centres in III-V compounds are presented. Additional crystalline materials are also dealt with, before a detailed description is given of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. Throughout, unifying concepts and models are stressed, and the book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors. |
| Umfang: | 1 Online-Ressource (x, 217 Seiten) |
| ISBN: | 9780511622533 |
Internformat
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| isbn | 9780511622533 |
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| series2 | Cambridge studies in semiconductor physics and microelectronic engineering |
| spelling | Redfield, David Photoinduced defects in semiconductors David Redfield and Richard H. Bube Cambridge Cambridge University Press 1996 1 Online-Ressource (x, 217 Seiten) txt c cr Cambridge studies in semiconductor physics and microelectronic engineering 4 This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the properties of DX and EL2 centres in III-V compounds are presented. Additional crystalline materials are also dealt with, before a detailed description is given of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. Throughout, unifying concepts and models are stressed, and the book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors. Bube, Richard H. 1927- Erscheint auch als Druck-Ausgabe 9780521024457 Erscheint auch als Druck-Ausgabe 9780521461962 |
| spellingShingle | Redfield, David Photoinduced defects in semiconductors |
| title | Photoinduced defects in semiconductors |
| title_auth | Photoinduced defects in semiconductors |
| title_exact_search | Photoinduced defects in semiconductors |
| title_full | Photoinduced defects in semiconductors David Redfield and Richard H. Bube |
| title_fullStr | Photoinduced defects in semiconductors David Redfield and Richard H. Bube |
| title_full_unstemmed | Photoinduced defects in semiconductors David Redfield and Richard H. Bube |
| title_short | Photoinduced defects in semiconductors |
| title_sort | photoinduced defects in semiconductors |
| work_keys_str_mv | AT redfielddavid photoinduceddefectsinsemiconductors AT buberichardh photoinduceddefectsinsemiconductors |