Verfügbarkeit: Growth of 3C-SiC using CS-PVT for application in power electronics and photonics

Growth of 3C-SiC using CS-PVT for application in power electronics and photonics:

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Bibliographische Detailangaben
Beteilige Person:	Kollmuß, Manuel (VerfasserIn)
Format:	Hochschulschrift/Dissertation Elektronisch E-Book
Sprache:	Englisch
Veröffentlicht:	Erlangen ; nürnberg 2023
Schlagwörter:	Siliciumcarbid Silicium Heteroepitaxie Kristallfläche Halbleitersubstrat Kristallzüchtung Cubic Silicon Carbide Close Space Physical Vapor Transport Wafer Bow Stress Analysis Defect Density Photonics Bonding Hochschulschrift
Links:	https://doi.org/10.25593/open-fau-35 https://open.fau.de/handle/openfau/30080 https://d-nb.info/1314277103/34
Beschreibung:	Enthält 4 Sonderdrucke
Umfang:	1 Online-Ressource (78 Seiten) Illustrationen, Diagramme
DOI:	10.25593/open-fau-35

Internformat

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Datensatz im Suchindex

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spellingShingle	Kollmuß, Manuel Growth of 3C-SiC using CS-PVT for application in power electronics and photonics 4\p Siliciumcarbid (DE-588)4055009-6 gnd 5\p Silicium (DE-588)4077445-4 gnd 6\p Heteroepitaxie (DE-588)4260178-2 gnd 7\p Kristallfläche (DE-588)4151344-7 gnd 8\p Halbleitersubstrat (DE-588)4158813-7 gnd 9\p Kristallzüchtung (DE-588)4140616-3 gnd
subject_GND	(DE-588)4055009-6 (DE-588)4077445-4 (DE-588)4260178-2 (DE-588)4151344-7 (DE-588)4158813-7 (DE-588)4140616-3 (DE-588)4113937-9
title	Growth of 3C-SiC using CS-PVT for application in power electronics and photonics
title_alt	Wachstum von 3C-SiC mittels CS-PVT-Verfahren für die Anwendung in der Leistungselektronik und Photonik
title_auth	Growth of 3C-SiC using CS-PVT for application in power electronics and photonics
title_exact_search	Growth of 3C-SiC using CS-PVT for application in power electronics and photonics
title_full	Growth of 3C-SiC using CS-PVT for application in power electronics and photonics vorgelegt von Manuel Kollmuß
title_fullStr	Growth of 3C-SiC using CS-PVT for application in power electronics and photonics vorgelegt von Manuel Kollmuß
title_full_unstemmed	Growth of 3C-SiC using CS-PVT for application in power electronics and photonics vorgelegt von Manuel Kollmuß
title_short	Growth of 3C-SiC using CS-PVT for application in power electronics and photonics
title_sort	growth of 3c sic using cs pvt for application in power electronics and photonics
topic	4\p Siliciumcarbid (DE-588)4055009-6 gnd 5\p Silicium (DE-588)4077445-4 gnd 6\p Heteroepitaxie (DE-588)4260178-2 gnd 7\p Kristallfläche (DE-588)4151344-7 gnd 8\p Halbleitersubstrat (DE-588)4158813-7 gnd 9\p Kristallzüchtung (DE-588)4140616-3 gnd
topic_facet	Siliciumcarbid Silicium Heteroepitaxie Kristallfläche Halbleitersubstrat Kristallzüchtung Hochschulschrift
url	https://doi.org/10.25593/open-fau-35 https://open.fau.de/handle/openfau/30080 https://d-nb.info/1314277103/34
work_keys_str_mv	AT kollmußmanuel growthof3csicusingcspvtforapplicationinpowerelectronicsandphotonics AT kollmußmanuel wachstumvon3csicmittelscspvtverfahrenfurdieanwendunginderleistungselektronikundphotonik

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