Verfügbarkeit: Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain

Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain:

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Bibliographische Detailangaben
Beteiligte Personen:	Rühl, Maximilian (VerfasserIn), Lehmeyer, Johannes (VerfasserIn), Nagy, Roland (VerfasserIn), Weisser, Matthias (VerfasserIn), Bockstedte, Michel (VerfasserIn), Krieger, Michael (VerfasserIn), Weber, Heiko B. (VerfasserIn)
Format:	Elektronisch E-Book
Sprache:	Englisch
Veröffentlicht:	Erlangen ; Nürnberg Friedrich-Alexander-Universität Erlangen-Nürnberg 2021
Schlagwörter:	silicon carbide color centers Stark effect
Links:	https://nbn-resolving.org/urn:nbn:de:bvb:29-opus4-184786 https://d-nb.info/1252075049/34 https://open.fau.de/handle/openfau/18478
Umfang:	1 Online-Ressource

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spelling	Rühl, Maximilian Verfasser aut Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain Maximilian Rühl, Johannes Lehmeyer, Roland Nagy, Matthias Weisser, Michel Bockstedte, Michael Krieger, Heiko B. Weber Erlangen ; Nürnberg Friedrich-Alexander-Universität Erlangen-Nürnberg 2021 1 Online-Ressource txt rdacontent c rdamedia cr rdacarrier Archivierung/Langzeitarchivierung gewährleistet DE-101 pdager silicon carbide color centers Stark effect Lehmeyer, Johannes Verfasser aut Nagy, Roland Verfasser aut Weisser, Matthias Verfasser aut Bockstedte, Michel Verfasser aut Krieger, Michael Verfasser aut Weber, Heiko B. Verfasser aut Sonderdruck aus New Journal of Physics Vol. 23 (2021) 10.1088/1367-2630/abfb3e https://nbn-resolving.org/urn:nbn:de:bvb:29-opus4-184786 Resolving-System kostenfrei Volltext https://d-nb.info/1252075049/34 Langzeitarchivierung Nationalbibliothek kostenfrei Volltext application/pdf https://open.fau.de/handle/openfau/18478 Verlag kostenfrei Volltext 1\p aepkn 0,85211 20220219 DE-101 https://d-nb.info/provenance/plan#aepkn 2\p aepsg 0,99862 20220219 DE-101 https://d-nb.info/provenance/plan#aepsg 3\p npi 20220218 DE-101 https://d-nb.info/provenance/plan#npi
spellingShingle	Rühl, Maximilian Lehmeyer, Johannes Nagy, Roland Weisser, Matthias Bockstedte, Michel Krieger, Michael Weber, Heiko B. Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain
title	Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain
title_auth	Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain
title_exact_search	Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain
title_full	Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain Maximilian Rühl, Johannes Lehmeyer, Roland Nagy, Matthias Weisser, Michel Bockstedte, Michael Krieger, Heiko B. Weber
title_fullStr	Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain Maximilian Rühl, Johannes Lehmeyer, Roland Nagy, Matthias Weisser, Michel Bockstedte, Michael Krieger, Heiko B. Weber
title_full_unstemmed	Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain Maximilian Rühl, Johannes Lehmeyer, Roland Nagy, Matthias Weisser, Michel Bockstedte, Michael Krieger, Heiko B. Weber
title_short	Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain
title_sort	removing the orientational degeneracy of the ts defect in 4h sic by electric fields and strain
url	https://nbn-resolving.org/urn:nbn:de:bvb:29-opus4-184786 https://d-nb.info/1252075049/34 https://open.fau.de/handle/openfau/18478
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