An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors:
Gespeichert in:
| Beteiligte Personen: | , , , , |
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| Format: | Elektronisch E-Book |
| Sprache: | Englisch |
| Veröffentlicht: |
Erlangen
Friedrich-Alexander-Universität Erlangen-Nürnberg
2019
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| Schlagwörter: | |
| Links: | https://nbn-resolving.org/urn:nbn:de:bvb:29-opus4-110558 http://d-nb.info/1186381795/34 https://open.fau.de/handle/openfau/11055 |
| Umfang: | 1 Online-Ressource |
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Datensatz im Suchindex
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| author | Hauck, Martin Lehmeyer, Johannes Pobegen, Gregor Weber, Heiko B. Krieger, Michael |
| author_facet | Hauck, Martin Lehmeyer, Johannes Pobegen, Gregor Weber, Heiko B. Krieger, Michael |
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| illustrated | Not Illustrated |
| indexdate | 2024-12-20T18:39:01Z |
| institution | BVB |
| language | English |
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| spelling | Hauck, Martin Verfasser aut An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors Martin Hauck, Johannes Lehmeyer, Gregor Pobegen, Heiko B. Weber, Michael Krieger Erlangen Friedrich-Alexander-Universität Erlangen-Nürnberg 2019 1 Online-Ressource txt rdacontent c rdamedia cr rdacarrier Archivierung/Langzeitarchivierung gewährleistet DE-101 pdager Characterization and analytical techniques Condensed-matter physics Lehmeyer, Johannes Verfasser aut Pobegen, Gregor Verfasser aut Weber, Heiko B. Verfasser aut Krieger, Michael Verfasser aut Sonderdruck aus Communications Physics Vol. 2 (2019) 10.1038/s42005-018-0102-8 https://nbn-resolving.org/urn:nbn:de:bvb:29-opus4-110558 Resolving-System kostenfrei Volltext http://d-nb.info/1186381795/34 Langzeitarchivierung Nationalbibliothek kostenfrei Volltext https://open.fau.de/handle/openfau/11055 Verlag kostenfrei Volltext |
| spellingShingle | Hauck, Martin Lehmeyer, Johannes Pobegen, Gregor Weber, Heiko B. Krieger, Michael An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors |
| title | An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors |
| title_auth | An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors |
| title_exact_search | An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors |
| title_full | An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors Martin Hauck, Johannes Lehmeyer, Gregor Pobegen, Heiko B. Weber, Michael Krieger |
| title_fullStr | An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors Martin Hauck, Johannes Lehmeyer, Gregor Pobegen, Heiko B. Weber, Michael Krieger |
| title_full_unstemmed | An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors Martin Hauck, Johannes Lehmeyer, Gregor Pobegen, Heiko B. Weber, Michael Krieger |
| title_short | An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors |
| title_sort | an adapted method for analyzing 4h silicon carbide metal oxide semiconductor field effect transistors |
| url | https://nbn-resolving.org/urn:nbn:de:bvb:29-opus4-110558 http://d-nb.info/1186381795/34 https://open.fau.de/handle/openfau/11055 |
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