Gallium nitride-enabled high frequency and high efficiency power conversion:
Gespeichert in:
| Weitere beteiligte Personen: | , , |
|---|---|
| Format: | Buch |
| Sprache: | Englisch |
| Veröffentlicht: |
Cham
Springer
[2018]
|
| Schriftenreihe: | Integrated circuits and systems
|
| Schlagwörter: | |
| Links: | http://deposit.dnb.de/cgi-bin/dokserv?id=d14dca5526b34bafb8a222972bab106f&prov=M&dok_var=1&dok_ext=htm http://www.springer.com/ |
| Beschreibung: | Hier auch später erschienene, unveränderte Nachdrucke |
| Umfang: | xiii, 232 Seiten Illustrationen, Diagramme 23.5 cm x 15.5 cm |
| ISBN: | 9783319779935 9783030085940 |
Internformat
MARC
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|---|---|---|---|
| 001 | BV045681365 | ||
| 003 | DE-604 | ||
| 005 | 20190627 | ||
| 007 | t| | ||
| 008 | 190502s2018 sz a||| |||| 00||| eng d | ||
| 016 | 7 | |a 1152335898 |2 DE-101 | |
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| 020 | |a 9783030085940 |c softcover |9 978-3-030-08594-0 | ||
| 024 | 3 | |a 9783319779935 | |
| 028 | 5 | 2 | |a Bestellnummer: 978-3-319-77993-5 |
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| 245 | 1 | 0 | |a Gallium nitride-enabled high frequency and high efficiency power conversion |
| 264 | 1 | |a Cham |b Springer |c [2018] | |
| 300 | |a xiii, 232 Seiten |b Illustrationen, Diagramme |c 23.5 cm x 15.5 cm | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Integrated circuits and systems | |
| 500 | |a Hier auch später erschienene, unveränderte Nachdrucke | ||
| 653 | |a Gallium Nitride | ||
| 653 | |a GaN device physics | ||
| 653 | |a GaN for Power Conversion | ||
| 653 | |a GaN transistors | ||
| 653 | |a GaN Reliability | ||
| 700 | 1 | |a Meneghesso, Gaudenzio |4 edt | |
| 700 | 1 | |a Meneghini, Matteo |0 (DE-588)1121332994 |4 edt | |
| 700 | 1 | |a Zanoni, Enrico |0 (DE-588)102462076X |4 edt | |
| 710 | 2 | |a Springer International Publishing |0 (DE-588)1064344704 |4 pbl | |
| 776 | 0 | 8 | |i Elektronische Reproduktion |z 9783319779942 |
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| 856 | 4 | 2 | |m X:MVB |u http://www.springer.com/ |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-031064832 | |
Datensatz im Suchindex
| _version_ | 1818985338328055808 |
|---|---|
| any_adam_object | |
| author2 | Meneghesso, Gaudenzio Meneghini, Matteo Zanoni, Enrico |
| author2_role | edt edt edt |
| author2_variant | g m gm m m mm e z ez |
| author_GND | (DE-588)1121332994 (DE-588)102462076X |
| author_facet | Meneghesso, Gaudenzio Meneghini, Matteo Zanoni, Enrico |
| building | Verbundindex |
| bvnumber | BV045681365 |
| classification_rvk | ZN 4240 |
| ctrlnum | (OCoLC)1103517721 (DE-599)DNB1152335898 |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV045681365 |
| illustrated | Illustrated |
| indexdate | 2024-12-20T18:33:19Z |
| institution | BVB |
| institution_GND | (DE-588)1064344704 |
| isbn | 9783319779935 9783030085940 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-031064832 |
| oclc_num | 1103517721 |
| open_access_boolean | |
| owner | DE-Aug4 DE-29T |
| owner_facet | DE-Aug4 DE-29T |
| physical | xiii, 232 Seiten Illustrationen, Diagramme 23.5 cm x 15.5 cm |
| publishDate | 2018 |
| publishDateSearch | 2018 |
| publishDateSort | 2018 |
| publisher | Springer |
| record_format | marc |
| series2 | Integrated circuits and systems |
| spelling | Gallium nitride-enabled high frequency and high efficiency power conversion Cham Springer [2018] xiii, 232 Seiten Illustrationen, Diagramme 23.5 cm x 15.5 cm txt rdacontent n rdamedia nc rdacarrier Integrated circuits and systems Hier auch später erschienene, unveränderte Nachdrucke Gallium Nitride GaN device physics GaN for Power Conversion GaN transistors GaN Reliability Meneghesso, Gaudenzio edt Meneghini, Matteo (DE-588)1121332994 edt Zanoni, Enrico (DE-588)102462076X edt Springer International Publishing (DE-588)1064344704 pbl Elektronische Reproduktion 9783319779942 Erscheint auch als Online-Ausgabe 978-3-319-77994-2 X:MVB text/html http://deposit.dnb.de/cgi-bin/dokserv?id=d14dca5526b34bafb8a222972bab106f&prov=M&dok_var=1&dok_ext=htm Inhaltstext X:MVB http://www.springer.com/ |
| spellingShingle | Gallium nitride-enabled high frequency and high efficiency power conversion |
| title | Gallium nitride-enabled high frequency and high efficiency power conversion |
| title_auth | Gallium nitride-enabled high frequency and high efficiency power conversion |
| title_exact_search | Gallium nitride-enabled high frequency and high efficiency power conversion |
| title_full | Gallium nitride-enabled high frequency and high efficiency power conversion |
| title_fullStr | Gallium nitride-enabled high frequency and high efficiency power conversion |
| title_full_unstemmed | Gallium nitride-enabled high frequency and high efficiency power conversion |
| title_short | Gallium nitride-enabled high frequency and high efficiency power conversion |
| title_sort | gallium nitride enabled high frequency and high efficiency power conversion |
| url | http://deposit.dnb.de/cgi-bin/dokserv?id=d14dca5526b34bafb8a222972bab106f&prov=M&dok_var=1&dok_ext=htm http://www.springer.com/ |
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