Frontiers in electronics: advanced modeling in nanoscale electron devices
Gespeichert in:
| Weitere beteiligte Personen: | , |
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| Format: | Elektronisch E-Book |
| Sprache: | Englisch |
| Veröffentlicht: |
Singapore
World Scientific
[2014]
|
| Schriftenreihe: | Selected topics in electronics and systems
volume 54 |
| Schlagwörter: | |
| Links: | http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=704075 http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=704075 |
| Beschreibung: | Description based on online resource; title from PDF title page (ebrary, viewed March 20, 2014) |
| Umfang: | 1 online resource (204 pages) |
| ISBN: | 9789814583190 9814583197 9789814583183 |
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| 245 | 1 | 0 | |a Frontiers in electronics |b advanced modeling in nanoscale electron devices |c editors, Benjamin Iñiguez, Universitat Rovira, Virgili, Spain, Tor A. Fjeldly, Norwegian University of Science and Technology (NTNU), Norway |
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| 490 | 0 | |a Selected topics in electronics and systems |v volume 54 | |
| 500 | |a Description based on online resource; title from PDF title page (ebrary, viewed March 20, 2014) | ||
| 505 | 8 | |a PREFACE; CONTENTS; Monte-Carlo Simulation of Ultra-Thin Film Silicon-on-Insulator MOSFETs; 1. Introduction; 2. Ensemble Monte Carlo simulators; 2.1. Quantum correction methods; 2.1.1. The effective potential method; 2.1.2. The density gradient method; 2.1.3. The effective conduction band edge (ECBE) method; 2.1.4. The multivalley effective conduction band edge approach (MV-ECBE); 2.2. Multisubband-Ensemble Monte Carlo method; 2.3. Multisubband-Ensemble Monte Carlo validation; 3. Optimization of ultrathin fully-depleted SOI transistors with ultrathin buried oxide (BOX) | |
| 505 | 8 | |a 4. Orientation effects in ultra-short channel DGSOI devices4.1. DGSOI drain current dependence on crystallographic orientation; Acknowledgments; References; Analytical Models and Electrical Characterisation of Advanced MOSFETs in the Quasi Ballistic Regime; 1. Introduction; 2. The Natori -- Lundstrom models of Quasi Ballistic Transport; 2.1. The Natori model of ballistic transport; 2.2. Injection velocity and subband engineering; 2.3. Lundstrom models of backscattering; 3. Beyond the Natori-Lundstrom model | |
| 505 | 8 | |a 3.1. Theoretical foundations of the Natori Lundstrom model: the quasi ballistic drift-diffusion theory3.2. Comparison with Monte Carlo simulations: results and discussion; 4. Electrical Characterization of MOSFETs in the Quasi Ballistic Regime; 4.1. Introduction & State of the art; 4.2. Principle of backscattering coefficient extraction in the linear regime; 4.3. Results and discussion; 5. Conclusions; Acknowledgments; References; Physics Based Analytical Modeling of Nanoscale Multigate MOSFETs; 1. Introduction; 2. Modeling of DG MOSFETs Based on Conformal Mapping Techniques | |
| 505 | 8 | |a 2.1. Conformal Mapping2.2. Inter-Electrode and Subthreshold Electrostatics in DG MOSFETs; 2.2.1. Corner correction; 2.2.2. Effect of subthreshold minority carriers near source and drain; 2.2.3. Verification of subthreshold electrostatics; 2.2.4. Subthreshold drain current; 2.2.5. Subthreshold capacitances; 2.3. Self-Consistent Electrostatics at and above Transition in DG MOSFETs; 2.3.1. Transition voltage; 2.3.2. Above-transition electrostatics; 2.3.3. Drain current; 2.3.4. Above-threshold capacitances; 3. Modeling of Circular Gate MOSFETs | |
| 505 | 8 | |a 3.1. Subthreshold Electrostatics of GAA MOSFETs Based on 2D Solutions3.2. Subthreshold Modeling of CirG MOSFETs; 3.3. Above-Threshold Modeling of CirG MOSFETs; 4. Unified Analytical Modeling of MugFETs; 4.1. Isomorphic Modeling of CirG and SqG MOSFETs in Subthreshold; 4.1.1. A simple long-channel model; 4.1.2. Short-channel modeling of CirG and SqG devices in subthreshold; 4.1.3. Rectangular gate and trigate MOSFETs; 4.2. Modeling of GAA MOSFETs in Strong Inversion; 4.2.1. Strong inversion electrostatics in DG MOSFETs; 4.2.2. Strong inversion electrostatics in SqG MOSFETs | |
| 505 | 8 | |a This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear exp | |
| 650 | 7 | |a Nanoelectronics |2 fast | |
| 650 | 4 | |a Electron transport / Mathematical models | |
| 650 | 4 | |a Nanoelectromechanical systems | |
| 650 | 4 | |a Nanostructured materials / Magnetic properties | |
| 650 | 4 | |a Nanostructured materials | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Engineering (General) |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Reference |2 bisacsh | |
| 650 | 4 | |a Mathematisches Modell | |
| 650 | 4 | |a Nanoelectronics | |
| 700 | 1 | |a Iñiguez, Benjamin |4 edt | |
| 700 | 1 | |a Fjeldly, Tor A. |4 edt | |
| 776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe |a Iniguez, Benjamin |t Frontiers in Electronics : Advanced Modeling of Nanoscale Electron Devices |
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Datensatz im Suchindex
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| author2 | Iñiguez, Benjamin Fjeldly, Tor A. |
| author2_role | edt edt |
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| building | Verbundindex |
| bvnumber | BV043780888 |
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| contents | PREFACE; CONTENTS; Monte-Carlo Simulation of Ultra-Thin Film Silicon-on-Insulator MOSFETs; 1. Introduction; 2. Ensemble Monte Carlo simulators; 2.1. Quantum correction methods; 2.1.1. The effective potential method; 2.1.2. The density gradient method; 2.1.3. The effective conduction band edge (ECBE) method; 2.1.4. The multivalley effective conduction band edge approach (MV-ECBE); 2.2. Multisubband-Ensemble Monte Carlo method; 2.3. Multisubband-Ensemble Monte Carlo validation; 3. Optimization of ultrathin fully-depleted SOI transistors with ultrathin buried oxide (BOX) 4. Orientation effects in ultra-short channel DGSOI devices4.1. DGSOI drain current dependence on crystallographic orientation; Acknowledgments; References; Analytical Models and Electrical Characterisation of Advanced MOSFETs in the Quasi Ballistic Regime; 1. Introduction; 2. The Natori -- Lundstrom models of Quasi Ballistic Transport; 2.1. The Natori model of ballistic transport; 2.2. Injection velocity and subband engineering; 2.3. Lundstrom models of backscattering; 3. Beyond the Natori-Lundstrom model 3.1. Theoretical foundations of the Natori Lundstrom model: the quasi ballistic drift-diffusion theory3.2. Comparison with Monte Carlo simulations: results and discussion; 4. Electrical Characterization of MOSFETs in the Quasi Ballistic Regime; 4.1. Introduction & State of the art; 4.2. Principle of backscattering coefficient extraction in the linear regime; 4.3. Results and discussion; 5. Conclusions; Acknowledgments; References; Physics Based Analytical Modeling of Nanoscale Multigate MOSFETs; 1. Introduction; 2. Modeling of DG MOSFETs Based on Conformal Mapping Techniques 2.1. Conformal Mapping2.2. Inter-Electrode and Subthreshold Electrostatics in DG MOSFETs; 2.2.1. Corner correction; 2.2.2. Effect of subthreshold minority carriers near source and drain; 2.2.3. Verification of subthreshold electrostatics; 2.2.4. Subthreshold drain current; 2.2.5. Subthreshold capacitances; 2.3. Self-Consistent Electrostatics at and above Transition in DG MOSFETs; 2.3.1. Transition voltage; 2.3.2. Above-transition electrostatics; 2.3.3. Drain current; 2.3.4. Above-threshold capacitances; 3. Modeling of Circular Gate MOSFETs 3.1. Subthreshold Electrostatics of GAA MOSFETs Based on 2D Solutions3.2. Subthreshold Modeling of CirG MOSFETs; 3.3. Above-Threshold Modeling of CirG MOSFETs; 4. Unified Analytical Modeling of MugFETs; 4.1. Isomorphic Modeling of CirG and SqG MOSFETs in Subthreshold; 4.1.1. A simple long-channel model; 4.1.2. Short-channel modeling of CirG and SqG devices in subthreshold; 4.1.3. Rectangular gate and trigate MOSFETs; 4.2. Modeling of GAA MOSFETs in Strong Inversion; 4.2.1. Strong inversion electrostatics in DG MOSFETs; 4.2.2. Strong inversion electrostatics in SqG MOSFETs This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear exp |
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| dewey-full | 620.5 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 620 - Engineering and allied operations |
| dewey-raw | 620.5 |
| dewey-search | 620.5 |
| dewey-sort | 3620.5 |
| dewey-tens | 620 - Engineering and allied operations |
| format | Electronic eBook |
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| id | DE-604.BV043780888 |
| illustrated | Not Illustrated |
| indexdate | 2024-12-20T17:45:02Z |
| institution | BVB |
| isbn | 9789814583190 9814583197 9789814583183 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029191948 |
| oclc_num | 878138012 |
| open_access_boolean | |
| owner | DE-1046 DE-1047 |
| owner_facet | DE-1046 DE-1047 |
| physical | 1 online resource (204 pages) |
| psigel | ZDB-4-EBA ZDB-4-ENC ZDB-4-EBA FAW_PDA_EBA |
| publishDate | 2014 |
| publishDateSearch | 2014 |
| publishDateSort | 2014 |
| publisher | World Scientific |
| record_format | marc |
| series2 | Selected topics in electronics and systems |
| spelling | Frontiers in electronics advanced modeling in nanoscale electron devices editors, Benjamin Iñiguez, Universitat Rovira, Virgili, Spain, Tor A. Fjeldly, Norwegian University of Science and Technology (NTNU), Norway Singapore World Scientific [2014] © 2014 1 online resource (204 pages) txt rdacontent c rdamedia cr rdacarrier Selected topics in electronics and systems volume 54 Description based on online resource; title from PDF title page (ebrary, viewed March 20, 2014) PREFACE; CONTENTS; Monte-Carlo Simulation of Ultra-Thin Film Silicon-on-Insulator MOSFETs; 1. Introduction; 2. Ensemble Monte Carlo simulators; 2.1. Quantum correction methods; 2.1.1. The effective potential method; 2.1.2. The density gradient method; 2.1.3. The effective conduction band edge (ECBE) method; 2.1.4. The multivalley effective conduction band edge approach (MV-ECBE); 2.2. Multisubband-Ensemble Monte Carlo method; 2.3. Multisubband-Ensemble Monte Carlo validation; 3. Optimization of ultrathin fully-depleted SOI transistors with ultrathin buried oxide (BOX) 4. Orientation effects in ultra-short channel DGSOI devices4.1. DGSOI drain current dependence on crystallographic orientation; Acknowledgments; References; Analytical Models and Electrical Characterisation of Advanced MOSFETs in the Quasi Ballistic Regime; 1. Introduction; 2. The Natori -- Lundstrom models of Quasi Ballistic Transport; 2.1. The Natori model of ballistic transport; 2.2. Injection velocity and subband engineering; 2.3. Lundstrom models of backscattering; 3. Beyond the Natori-Lundstrom model 3.1. Theoretical foundations of the Natori Lundstrom model: the quasi ballistic drift-diffusion theory3.2. Comparison with Monte Carlo simulations: results and discussion; 4. Electrical Characterization of MOSFETs in the Quasi Ballistic Regime; 4.1. Introduction & State of the art; 4.2. Principle of backscattering coefficient extraction in the linear regime; 4.3. Results and discussion; 5. Conclusions; Acknowledgments; References; Physics Based Analytical Modeling of Nanoscale Multigate MOSFETs; 1. Introduction; 2. Modeling of DG MOSFETs Based on Conformal Mapping Techniques 2.1. Conformal Mapping2.2. Inter-Electrode and Subthreshold Electrostatics in DG MOSFETs; 2.2.1. Corner correction; 2.2.2. Effect of subthreshold minority carriers near source and drain; 2.2.3. Verification of subthreshold electrostatics; 2.2.4. Subthreshold drain current; 2.2.5. Subthreshold capacitances; 2.3. Self-Consistent Electrostatics at and above Transition in DG MOSFETs; 2.3.1. Transition voltage; 2.3.2. Above-transition electrostatics; 2.3.3. Drain current; 2.3.4. Above-threshold capacitances; 3. Modeling of Circular Gate MOSFETs 3.1. Subthreshold Electrostatics of GAA MOSFETs Based on 2D Solutions3.2. Subthreshold Modeling of CirG MOSFETs; 3.3. Above-Threshold Modeling of CirG MOSFETs; 4. Unified Analytical Modeling of MugFETs; 4.1. Isomorphic Modeling of CirG and SqG MOSFETs in Subthreshold; 4.1.1. A simple long-channel model; 4.1.2. Short-channel modeling of CirG and SqG devices in subthreshold; 4.1.3. Rectangular gate and trigate MOSFETs; 4.2. Modeling of GAA MOSFETs in Strong Inversion; 4.2.1. Strong inversion electrostatics in DG MOSFETs; 4.2.2. Strong inversion electrostatics in SqG MOSFETs This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear exp Nanoelectronics fast Electron transport / Mathematical models Nanoelectromechanical systems Nanostructured materials / Magnetic properties Nanostructured materials TECHNOLOGY & ENGINEERING / Engineering (General) bisacsh TECHNOLOGY & ENGINEERING / Reference bisacsh Mathematisches Modell Nanoelectronics Iñiguez, Benjamin edt Fjeldly, Tor A. edt Erscheint auch als Druck-Ausgabe Iniguez, Benjamin Frontiers in Electronics : Advanced Modeling of Nanoscale Electron Devices |
| spellingShingle | Frontiers in electronics advanced modeling in nanoscale electron devices PREFACE; CONTENTS; Monte-Carlo Simulation of Ultra-Thin Film Silicon-on-Insulator MOSFETs; 1. Introduction; 2. Ensemble Monte Carlo simulators; 2.1. Quantum correction methods; 2.1.1. The effective potential method; 2.1.2. The density gradient method; 2.1.3. The effective conduction band edge (ECBE) method; 2.1.4. The multivalley effective conduction band edge approach (MV-ECBE); 2.2. Multisubband-Ensemble Monte Carlo method; 2.3. Multisubband-Ensemble Monte Carlo validation; 3. Optimization of ultrathin fully-depleted SOI transistors with ultrathin buried oxide (BOX) 4. Orientation effects in ultra-short channel DGSOI devices4.1. DGSOI drain current dependence on crystallographic orientation; Acknowledgments; References; Analytical Models and Electrical Characterisation of Advanced MOSFETs in the Quasi Ballistic Regime; 1. Introduction; 2. The Natori -- Lundstrom models of Quasi Ballistic Transport; 2.1. The Natori model of ballistic transport; 2.2. Injection velocity and subband engineering; 2.3. Lundstrom models of backscattering; 3. Beyond the Natori-Lundstrom model 3.1. Theoretical foundations of the Natori Lundstrom model: the quasi ballistic drift-diffusion theory3.2. Comparison with Monte Carlo simulations: results and discussion; 4. Electrical Characterization of MOSFETs in the Quasi Ballistic Regime; 4.1. Introduction & State of the art; 4.2. Principle of backscattering coefficient extraction in the linear regime; 4.3. Results and discussion; 5. Conclusions; Acknowledgments; References; Physics Based Analytical Modeling of Nanoscale Multigate MOSFETs; 1. Introduction; 2. Modeling of DG MOSFETs Based on Conformal Mapping Techniques 2.1. Conformal Mapping2.2. Inter-Electrode and Subthreshold Electrostatics in DG MOSFETs; 2.2.1. Corner correction; 2.2.2. Effect of subthreshold minority carriers near source and drain; 2.2.3. Verification of subthreshold electrostatics; 2.2.4. Subthreshold drain current; 2.2.5. Subthreshold capacitances; 2.3. Self-Consistent Electrostatics at and above Transition in DG MOSFETs; 2.3.1. Transition voltage; 2.3.2. Above-transition electrostatics; 2.3.3. Drain current; 2.3.4. Above-threshold capacitances; 3. Modeling of Circular Gate MOSFETs 3.1. Subthreshold Electrostatics of GAA MOSFETs Based on 2D Solutions3.2. Subthreshold Modeling of CirG MOSFETs; 3.3. Above-Threshold Modeling of CirG MOSFETs; 4. Unified Analytical Modeling of MugFETs; 4.1. Isomorphic Modeling of CirG and SqG MOSFETs in Subthreshold; 4.1.1. A simple long-channel model; 4.1.2. Short-channel modeling of CirG and SqG devices in subthreshold; 4.1.3. Rectangular gate and trigate MOSFETs; 4.2. Modeling of GAA MOSFETs in Strong Inversion; 4.2.1. Strong inversion electrostatics in DG MOSFETs; 4.2.2. Strong inversion electrostatics in SqG MOSFETs This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear exp Nanoelectronics fast Electron transport / Mathematical models Nanoelectromechanical systems Nanostructured materials / Magnetic properties Nanostructured materials TECHNOLOGY & ENGINEERING / Engineering (General) bisacsh TECHNOLOGY & ENGINEERING / Reference bisacsh Mathematisches Modell Nanoelectronics |
| title | Frontiers in electronics advanced modeling in nanoscale electron devices |
| title_auth | Frontiers in electronics advanced modeling in nanoscale electron devices |
| title_exact_search | Frontiers in electronics advanced modeling in nanoscale electron devices |
| title_full | Frontiers in electronics advanced modeling in nanoscale electron devices editors, Benjamin Iñiguez, Universitat Rovira, Virgili, Spain, Tor A. Fjeldly, Norwegian University of Science and Technology (NTNU), Norway |
| title_fullStr | Frontiers in electronics advanced modeling in nanoscale electron devices editors, Benjamin Iñiguez, Universitat Rovira, Virgili, Spain, Tor A. Fjeldly, Norwegian University of Science and Technology (NTNU), Norway |
| title_full_unstemmed | Frontiers in electronics advanced modeling in nanoscale electron devices editors, Benjamin Iñiguez, Universitat Rovira, Virgili, Spain, Tor A. Fjeldly, Norwegian University of Science and Technology (NTNU), Norway |
| title_short | Frontiers in electronics |
| title_sort | frontiers in electronics advanced modeling in nanoscale electron devices |
| title_sub | advanced modeling in nanoscale electron devices |
| topic | Nanoelectronics fast Electron transport / Mathematical models Nanoelectromechanical systems Nanostructured materials / Magnetic properties Nanostructured materials TECHNOLOGY & ENGINEERING / Engineering (General) bisacsh TECHNOLOGY & ENGINEERING / Reference bisacsh Mathematisches Modell Nanoelectronics |
| topic_facet | Nanoelectronics Electron transport / Mathematical models Nanoelectromechanical systems Nanostructured materials / Magnetic properties Nanostructured materials TECHNOLOGY & ENGINEERING / Engineering (General) TECHNOLOGY & ENGINEERING / Reference Mathematisches Modell |
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