Nobel lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation:
Gespeichert in:
| Beteilige Person: | |
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| Format: | Paper |
| Sprache: | Englisch |
| Veröffentlicht: |
2015
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| Schlagwörter: | |
| Umfang: | Illustrationen, Diagramme |
| ISSN: | 0034-6861 |
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| 245 | 1 | 0 | |a Nobel lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation |c Hiroshi Amano, Nagoya University, Nagoya, Japan |
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| id | DE-604.BV043362897 |
| illustrated | Illustrated |
| indexdate | 2025-01-11T18:15:22Z |
| institution | BVB |
| issn | 0034-6861 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-028782060 |
| oclc_num | 956560484 |
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| physical | Illustrationen, Diagramme |
| publishDate | 2015 |
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| spelling | Amano, Hiroshi 1960- Verfasser (DE-588)1093439912 aut Nobel lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation Hiroshi Amano, Nagoya University, Nagoya, Japan Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation 2015 Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier Amano, Hiroshi 1960- (DE-588)1093439912 gnd rswk-swf Geschichte 2014 gnd rswk-swf Lumineszenzdiode (DE-588)4125154-4 gnd rswk-swf Nobelpreis (DE-588)4130217-5 gnd rswk-swf Vortrag (DE-588)4064035-8 gnd rswk-swf p-Halbleiter (DE-588)4290573-4 gnd rswk-swf Herstellung (DE-588)4159653-5 gnd rswk-swf Blau (DE-588)4137963-9 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Lumineszenzdiode (DE-588)4125154-4 s Blau (DE-588)4137963-9 s Galliumnitrid (DE-588)4375592-6 s Herstellung (DE-588)4159653-5 s p-Halbleiter (DE-588)4290573-4 s DE-604 Amano, Hiroshi 1960- (DE-588)1093439912 p Nobelpreis (DE-588)4130217-5 s Vortrag (DE-588)4064035-8 s Geschichte 2014 z Reviews of modern physics / publ. by the American Physical Society Melville, NY, 2015 Volume 87, 2015, Number 4, October-December, Seite 1133-1138 (DE-604)BV003750688 0034-6861 (DE-600)209901-9 |
| spellingShingle | Amano, Hiroshi 1960- Nobel lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation Amano, Hiroshi 1960- (DE-588)1093439912 gnd Lumineszenzdiode (DE-588)4125154-4 gnd Nobelpreis (DE-588)4130217-5 gnd Vortrag (DE-588)4064035-8 gnd p-Halbleiter (DE-588)4290573-4 gnd Herstellung (DE-588)4159653-5 gnd Blau (DE-588)4137963-9 gnd Galliumnitrid (DE-588)4375592-6 gnd |
| subject_GND | (DE-588)1093439912 (DE-588)4125154-4 (DE-588)4130217-5 (DE-588)4064035-8 (DE-588)4290573-4 (DE-588)4159653-5 (DE-588)4137963-9 (DE-588)4375592-6 |
| title | Nobel lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation |
| title_alt | Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation |
| title_auth | Nobel lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation |
| title_exact_search | Nobel lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation |
| title_full | Nobel lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation Hiroshi Amano, Nagoya University, Nagoya, Japan |
| title_fullStr | Nobel lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation Hiroshi Amano, Nagoya University, Nagoya, Japan |
| title_full_unstemmed | Nobel lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation Hiroshi Amano, Nagoya University, Nagoya, Japan |
| title_short | Nobel lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation |
| title_sort | nobel lecture growth of gan on sapphire via low temperature deposited buffer layer and realization of p type gan by mg doping followed by low energy electron beam irradiation |
| topic | Amano, Hiroshi 1960- (DE-588)1093439912 gnd Lumineszenzdiode (DE-588)4125154-4 gnd Nobelpreis (DE-588)4130217-5 gnd Vortrag (DE-588)4064035-8 gnd p-Halbleiter (DE-588)4290573-4 gnd Herstellung (DE-588)4159653-5 gnd Blau (DE-588)4137963-9 gnd Galliumnitrid (DE-588)4375592-6 gnd |
| topic_facet | Amano, Hiroshi 1960- Lumineszenzdiode Nobelpreis Vortrag p-Halbleiter Herstellung Blau Galliumnitrid |
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