Intermodulation distortion in GaN HEMT:
Gespeichert in:
| Beteilige Person: | |
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| Format: | Hochschulschrift/Dissertation Buch |
| Sprache: | Englisch |
| Veröffentlicht: |
2009
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| Schlagwörter: | |
| Links: | https://nbn-resolving.org/urn:nbn:de:kobv:83-opus-24700 http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018703056&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| Umfang: | XI, 138 S. Ill., graph. Darst. |
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Datensatz im Suchindex
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| adam_text | CONTENTS ACKNOWLEDGMENTS V ABSTRACT VII CHAPTER 1 INTRODUCTION 1.1
OVERVIEW 1.2 ORGANIZATION OF THE THESIS CHAPTER 2 NONLINEAR DISTORTIONS
IN ACTIVE DEVICES 2.1 LINEARITY FIGURE OF MERIT FOR ACTIVE DEVICES 2.2
DISTORTION IN ACTIVE DEVICES 2.3 IMD CHARACTERIZATION OF DEVICES 2.4
COMPARISON OF DEVICES IN TERMS OF LINEARITY CHAPTER 3 GAN HEMT 3.1 BASIC
HEMT OPERATION 3.2 GAN MATERIAL PROPERTIES 3.3 GAN HEMTDEVICE
FABRICATION 3.3.1 SUBSTRATE 3.3.2 BASIC GAN PROCESS TECHNOLOGY AT FBH
3.4 PACKAGING 1 5 9 9 9 10 15 20 23 23 15 23 24 24 25 28 BIBLIOGRAFISCHE
INFORMATIONEN HTTP://D-NB.INFO/1000063275 DIGITALISIERT DURCH CONTENTS
CHAPTER 4 MEASUREMENT AND CHARACTERIZATION 4.1 INTERMODULATION TEST
SETUP 4.1.1 THE INPUT AMPLIFIER 4.1.2 BIAS-T 4.2 POWER CALIBRATION 4.3
FIXTURE 4.4 MEASUREMENTS 4.5 MEASUREMENT SAFETY 4.5.1 DRAIN SAFETY USING
E-FUSE 4.5.2 SELF PINCHING BIAS-T TO AVOID GATE TURN-ON AND SPURIOUS
OSCILLATION X 31 31 35 37 37 39 41 42 47 CHAPTER 5 57 IMD SOURCES IN GAN
HEMT 5.1 SENSITIVITY ANALYSIS BASED ON LARGE SIGNAL MODEL 57 5.2
MEASUREMENT BASED ANALYSIS 69 5.2.1 SIN UNDOPED CAP 69 5.2.2 GAN CAP
DOPED WITH SILICON 71 5.3.3 AIGAN BARRIER HEIGHT 73 5.3.4 T-GATE AND
EMBEDDED GATE 73 5.3.5 FIELD PLATE VARIATION 75 5.3.6 DRAIN SOURCE
CAPACITANCE VARIATION 77 5.3 ACCESS RESISTANCE RELATED NONLINEARITY 79
5.31 INFLUENCE OF GATE SOURCE SPACING 84 CHAPTER 6 92 DEVICE LEVEL
LINEARITY OF GAN HEMT 87 6.1 LINKING SYSTEMATIC AND SENSITIVITY ANALYSES
TO 87 PHYSICAL SIMULATION 6.2 INFLUENCE OF BARRIER THICKNESS 92 6.3.1
THEORY AND SIMULATION 92 6.3.2 FABRICATION, MEASUREMENTS & DISCUSSION 95
6.3 ENHANCING OVERALL LINEARITY OF A LARGE DEVICE 99 6.4 ENHANCING
LINEARITY AT LOW BACK-OFF REGIME 103 6.4. CONTENTS XI CHAPTER 7 109 GAN
HEMT AS LINEAR AMPLIFIER 7.1CLASS-A,BANDAB 109 7.2 GAN HEMT BASED LINEAR
PA DESIGN 110 7.3 PERFORMANCE OF GAN HEMT 112 7.3.1 POWER PERFORMANCE
113 7.3.2 NOISE PERFORMANCE 114 7.3.3 LINEARITY PERFORMANCE 117
CONCLUSIONS 119 REFERENCES 125 LIST OF ACRONYMS 131 APPENDIX-I 133
APPENDIX-II 135 PUBLICATION AND PATENT 137
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| spellingShingle | Khalil, Ibrahim Intermodulation distortion in GaN HEMT |
| subject_GND | (DE-588)4113937-9 |
| title | Intermodulation distortion in GaN HEMT |
| title_auth | Intermodulation distortion in GaN HEMT |
| title_exact_search | Intermodulation distortion in GaN HEMT |
| title_full | Intermodulation distortion in GaN HEMT vorgelegt von Ibrahim Khalil |
| title_fullStr | Intermodulation distortion in GaN HEMT vorgelegt von Ibrahim Khalil |
| title_full_unstemmed | Intermodulation distortion in GaN HEMT vorgelegt von Ibrahim Khalil |
| title_short | Intermodulation distortion in GaN HEMT |
| title_sort | intermodulation distortion in gan hemt |
| topic_facet | Hochschulschrift |
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