Einstein relation in compound semiconductors and their nanostructures:
Gespeichert in:
| Beteiligte Personen: | , , |
|---|---|
| Format: | Buch |
| Sprache: | Englisch |
| Veröffentlicht: |
Berlin ; Heidelberg
Springer
2009
|
| Schriftenreihe: | Springer series in materials science
116 |
| Schlagwörter: | |
| Links: | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017167968&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| Beschreibung: | Literaturangaben |
| Umfang: | XX, 457 S. graph. Darst. |
| ISBN: | 9783540795568 |
Internformat
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| 264 | 1 | |a Berlin ; Heidelberg |b Springer |c 2009 | |
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| 650 | 4 | |a Nanostructured materials | |
| 650 | 4 | |a Semiconductors |x Diffusion | |
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Datensatz im Suchindex
| _version_ | 1819380684686360576 |
|---|---|
| adam_text | CONTENTS 1 BASICS OF THE EINSTEIN RELATION 1 1.1 INTRODUCTION 1 1.2
GENERALIZED FORMULATION OF THE EINSTEIN RELATION FOR MULTI-BAND
SEMICONDUCTORS 2 1.3 SUGGESTIONS FOR THE EXPERIMENTAL DETERMINATION OF
THE EINSTEIN RELATION IN SEMICONDUCTORS HAVING ARBITRARY DISPERSION LAWS
4 1.4 SUMMARY 7 REFERENCES 8 2 THE EINSTEIN RELATION IN BULK SPECIMENS
OF COMPOUND SEMICONDUCTORS 13 2.1 INVESTIGATION ON TETRAGONAL MATERIALS
13 2.1.1 INTRODUCTION 13 2.1.2 THEORETICAL BACKGROUND 14 2.1.3 SPECIAL
CASES FOR III-V SEMICONDUCTORS 16 2.1.4 RESULT AND DISCUSSIONS 19 2.2
INVESTIGATION FOR II-VI SEMICONDUCTORS 26 2.2.1 INTRODUCTION 26 2.2.2
THEORETICAL BACKGROUND 27 2.2.3 RESULT AND DISCUSSIONS 28 2.3
INVESTIGATION FOR BI IN ACCORDANCE WITH THE MCCLURE- CHOI, THE COHEN,
THE LAX, AND THE PARABOLIC ELLIPSOIDAL BAND MODELS 29 2.3.1 INTRODUCTION
29 2.3.2 THEORETICAL BACKGROUND 29 2.3.3 RESULT AND DISCUSSIONS 33 2.4
INVESTIGATION FOR IV-VI SEMICONDUCTORS 34 2.4.1 INTRODUCTION 34 2.4.2
THEORETICAL BACKGROUND 34 2.4.3 RESULT AND DISCUSSIONS 35
BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/990669181 DIGITALISIERT
DURCH XII CONTENTS 2.5 INVESTIGATION FOR STRESSED KANE TYPE
SEMICONDUCTORS 35 2.5.1 INTRODUCTION 35 2.5.2 THEORETICAL BACKGROUND 36
2.5.3 RESULT AND DISCUSSIONS 37 2.6 SUMMARY 38 2.7 OPEN RESEARCH
PROBLEMS 38 REFERENCES 48 3 THE EINSTEIN RELATION IN COMPOUND
SEMICONDUCTORS UNDER MAGNETIC QUANTIZATION 51 3.1 INTRODUCTION 51 3.2
THEORETICAL BACKGROUND 52 3.2.1 TETRAGONAL MATERIALS 52 3.2.2 SPECIAL
CASES FOR III-V, TERNARY AND QUATERNARY MATERIALS 56 3.2.3 II-VI
SEMICONDUCTORS 63 3.2.4 THE FORMULATION OF DMR IN BI 65 3.2.5 IV-VI
MATERIALS 75 3.2.6 STRESSED KANE TYPE SEMICONDUCTORS 75 3.3 RESULT AND
DISCUSSIONS 77 3.4 OPEN RESEARCH PROBLEMS 95 REFERENCES 104 4 THE
EINSTEIN RELATION IN COMPOUND SEMICONDUCTORS UNDER CROSSED FIELDS
CONFIGURATION 107 4.1 INTRODUCTION 107 4.2 THEORETICAL BACKGROUND 108
4.2.1 TETRAGONAL MATERIALS 108 4.2.2 SPECIAL CASES FOR III-V, TERNARY
AND QUATERNARY MATERIALS 112 4.2.3 II-VI SEMICONDUCTORS 116 4.2.4 THE
FORMULATION OF DMR IN BI 118 4.2.5 IV-VI MATERIALS 127 4.2.6 STRESSED
KANE TYPE SEMICONDUCTORS 127 4.3 RESULT AND DISCUSSIONS 130 4.4 OPEN
RESEARCH PROBLEMS 150 REFERENCES 155 5 THE EINSTEIN RELATION IN COMPOUND
SEMICONDUCTORS UNDE CONTENTS XIII 5.2.3 II-VI SEMICONDUCTORS 162 5.2.4
THE FORMULATION OF 2D DMR IN BISMUTH 163 5.2.5 IV-VI MATERIALS 169 5.2.6
STRESSED KANE TYPE SEMICONDUCTORS 173 5.3 RESULT AND DISCUSSIONS 174 5.4
OPEN RESEARCH PROBLEMS 189 REFERENCES 195 6 THE EINSTEIN RELATION IN
QUANTUM WIRES OF COMPOUND SEMICONDUCTORS 197 6.1 INTRODUCTION 197 6.2
THEORETICAL BACKGROUND 198 6.2.1 TETRAGONAL MATERIALS 198 6.2.2 SPECIAL
CASES FOR III-V, TERNARY AND QUATERNARY MATERIALS 199 6.2.3 II-VI
MATERIALS 202 6.2.4 THE FORMULATION OF ID DMR IN BISMUTH 203 6.2.5 IV-VT
MATERIALS 207 6.2.6 STRESSED KANE TYPE SEMICONDUCTORS 210 6.2.7 CARBON
NANOTUBES 211 6.3 RESULT AND DISCUSSIONS 212 6.4 OPEN RESEARCH PROBLEMS
227 REFERENCES 231 7 THE EINSTEIN RELATION IN INVERSION LAYERS OF
COMPOUND SEMICONDUCTORS 235 7.1 INTRODUCTION 235 7.2 THEORETICAL
BACKGROUND 236 7.2.1 FORMULATION OF THE EINSTEIN RELATION IN N-CHANNEL
INVERSION LAYERS OF TETRAGONAL MATERIALS 236 7.2.2 FORMULATION OF THE
EINSTEIN RELATION IN N-CHANNEL INVERSION LAYERS OF III-V, TERNARY AND
QUATERNARY MATERIALS 241 7.2.3 FORMULATION OF THE EINSTEIN RELATION IN
P-CHANNEL INVERSIO XIV CONTENTS 8 THE EINSTEIN RELATION IN NIPI
STRUCTURES OF COMPOUND SEMICONDUCTORS 279 8.1 INTRODUCTION 279 8.2
THEORETICAL BACKGROUND 280 8.2.1 FORMULATION OF THE EINSTEIN RELATION IN
NIPI STRUCTURES OF TETRAGONAL MATERIALS 280 8.2.2 EINSTEIN RELATION FOR
THE NIPI STRUCTURES OF III-V COMPOUNDS 281 8.2.3 EINSTEIN RELATION FOR
THE NIPI STRUCTURES OF II-VI COMPOUNDS 283 8.2.4 EINSTEIN RELATION FOR
THE NIPI STRUCTURES OF IV-VI COMPOUNDS 285 8.2.5 EINSTEIN RELATION FOR
THE NIPI STRUCTURES OF STRESSED KANE TYPE COMPOUNDS 288 8.3 RESULT AND
DISCUSSIONS 289 8.4 OPEN RESEARCH PROBLEMS 295 REFERENCES 298 9 THE
EINSTEIN RELATION IN SUPERLATTICES OF COMPOUND SEMICONDUCTORS IN THE
PRESENCE OF EXTERNAL FIELDS 301 9.1 INTRODUCTION 301 9.2 THEORETICAL
BACKGROUND 302 9.2.1 EINSTEIN RELATION UNDER MAGNETIC QUANTIZATION IN
III-V SUPERLATTICES WITH GRADED INTERFACES 302 9.2.2 EINSTEIN RELATION
UNDER MAGNETIC QUANTIZATION IN II-VI SUPERLATTICES WITH GRADED
INTERFACES 304 9.2.3 EINSTEIN RELATION UNDER MAGNETIC QUANTIZATION IN
IV-VI SUPERLATTICES WITH GRADED INTERFACES 307 9.2.4 EINSTEIN RELATION
UNDER MAGNETIC QUANTIZATION IN HGTE/CDTE SUPERLATTICES WITH GRADED
INTERFACES ... 310 9.2.5 EINSTEIN RELATION UNDER MAGNETIC QUANTIZATION
IN III-V EFFECTIVE MASS SUPERLATTICES 312 9.2.6 EINSTEIN RELATION UNDER
MAGNETIC QUANTIZATION I CONTENTS XV 9.2.12 EINSTEIN RELATION IN
HGTE/CDTE QUANTUM WIRE SUPERLATTICES WITH GRADED INTERFACES 323 9.2.13
EINSTEIN RELATION IN III-V EFFECTIVE MASS QUANTUM WIRE SUPERLATTICES 324
9.2.14 EINSTEIN RELATION IN II-VI EFFECTIVE MASS QUANTUM WIRE
SUPERLATTICES 326 9.2.15 EINSTEIN RELATION IN IV-VI EFFECTIVE MASS
QUANTUM WIRE SUPERLATTICES 327 9.2.16 EINSTEIN RELATION IN HGTE/CDTE
EFFECTIVE MASS QUANTUM WIRE SUPERLATTICES 328 9.3 RESULT AND DISCUSSIONS
329 9.4 OPEN RESEARCH PROBLEMS 333 REFERENCES 339 10 THE EINSTEIN
RELATION IN COMPOUND SEMICONDUCTORS IN THE PRESENCE OF LIGHT WAVES 341
10.1 INTRODUCTION 341 10.2 THEORETICAL BACKGROUND 342 10.2.1 THE
FORMULATION OF THE ELECTRON DISPERSION LAW IN THE PRESENCE OF LIGHT
WAVES IN III-V, TERNARY AND QUATERNARY MATERIALS 342 10.2.2 THE
FORMULATION OF THE DMR IN THE PRESENCE OF LIGHT WAVES IN III-V, TERNARY
AND QUATERNARY MATERIALS . . . 352 10.3 RESULT AND DISCUSSIONS 354 10.4
THE FORMULATION OF THE DMR IN THE PRESENCE OF QUANTIZING MAGNETIC FIELD
UNDER EXTERNAL PHOTO-EXCITATION IN III-V, TERNARY AND QUATERNARY
MATERIALS 360 10.5 THEORETICAL BACKGROUND 361 10.6 RESULT AND
DISCUSSIONS 363 10.7 THE FORMULATION OF THE DMR IN THE PRESENCE OF
CROSS-FIELD CONFIGURATIO XVI CONTENTS 11 THE EINSTEIN RELATION IN
HEAVILY DOPED COMPOUND SEMICONDUCTORS 413 11.1 INTRODUCTION 413 11.2
THEORETICAL BACKGROUND 414 11.2.1 STUDY OF THE EINSTEIN RELATION IN
HEAVILY DOPED TETRAGONAL MATERIALS FORMING GAUSSIAN BAND TAILS ... 414
11.2.2 STUDY OF THE EINSTEIN RELATION IN HEAVILY DOPED III-V, TERNARY
AND QUATERNARY MATERIALS FORMING GAUSSIAN BAND TAILS 423 11.2.3 STUDY OF
THE EINSTEIN RELATION IN HEAVILY DOPED II-VI MATERIALS FORMING GAUSSIAN
BAND TAILS 426 11.2.4 STUDY OF THE EINSTEIN RELATION IN HEAVILY DOPED
IV-VI MATERIALS FORMING GAUSSIAN BAND TAILS 428 11.2.5 STUDY OF THE
EINSTEIN RELATION IN HEAVILY DOPED STRESSED MATERIALS FORMING GAUSSIAN
BAND TAILS 432 11.3 RESULT AND DISCUSSIONS 435 11.4 OPEN RESEARCH
PROBLEMS ; 439 REFERENCES 447 12 CONCLUSION AND FUTURE RESEARCH 449
MATERIALS INDEX 453 SUBJECT INDEX 455
|
| any_adam_object | 1 |
| author | Ghatak, Kamakhya Prasad 1953- Bhattacharya, Sitangshu De, Debashis 1976- |
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| id | DE-604.BV035363969 |
| illustrated | Illustrated |
| indexdate | 2024-12-20T13:29:24Z |
| institution | BVB |
| isbn | 9783540795568 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-017167968 |
| oclc_num | 277067620 |
| open_access_boolean | |
| owner | DE-703 DE-11 |
| owner_facet | DE-703 DE-11 |
| physical | XX, 457 S. graph. Darst. |
| publishDate | 2009 |
| publishDateSearch | 2009 |
| publishDateSort | 2009 |
| publisher | Springer |
| record_format | marc |
| series | Springer series in materials science |
| series2 | Springer series in materials science |
| spellingShingle | Ghatak, Kamakhya Prasad 1953- Bhattacharya, Sitangshu De, Debashis 1976- Einstein relation in compound semiconductors and their nanostructures Springer series in materials science Compound semiconductors Nanostructured materials Semiconductors Diffusion Einstein-Relation (DE-588)7638246-1 gnd Nanostruktur (DE-588)4204530-7 gnd Verbindungshalbleiter (DE-588)4062623-4 gnd |
| subject_GND | (DE-588)7638246-1 (DE-588)4204530-7 (DE-588)4062623-4 |
| title | Einstein relation in compound semiconductors and their nanostructures |
| title_auth | Einstein relation in compound semiconductors and their nanostructures |
| title_exact_search | Einstein relation in compound semiconductors and their nanostructures |
| title_full | Einstein relation in compound semiconductors and their nanostructures Kamakhya Prasad Ghatak ; Sitangshu Bhattacharya ; Debashis De |
| title_fullStr | Einstein relation in compound semiconductors and their nanostructures Kamakhya Prasad Ghatak ; Sitangshu Bhattacharya ; Debashis De |
| title_full_unstemmed | Einstein relation in compound semiconductors and their nanostructures Kamakhya Prasad Ghatak ; Sitangshu Bhattacharya ; Debashis De |
| title_short | Einstein relation in compound semiconductors and their nanostructures |
| title_sort | einstein relation in compound semiconductors and their nanostructures |
| topic | Compound semiconductors Nanostructured materials Semiconductors Diffusion Einstein-Relation (DE-588)7638246-1 gnd Nanostruktur (DE-588)4204530-7 gnd Verbindungshalbleiter (DE-588)4062623-4 gnd |
| topic_facet | Compound semiconductors Nanostructured materials Semiconductors Diffusion Einstein-Relation Nanostruktur Verbindungshalbleiter |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017167968&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV000683335 |
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