Handbook of nitride semiconductors and devices: 2 Electronic and optical process in nitrides
Gespeichert in:
| Beteilige Person: | |
|---|---|
| Format: | Buch |
| Sprache: | Englisch |
| Veröffentlicht: |
Weinheim
Wiley-VCH
2008
|
| Links: | http://www.gbv.de/dms/ilmenau/toc/558782019.PDF http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017111311&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| Beschreibung: | Literaturangaben Auf der Haupttitels. fälschl. Hauptsachtitel des 1. Bandes gedruckt, richtigen Titel vom Umschlag übernommen |
| Umfang: | XXXVI, 847 S. Ill., graph. Darst. 25 cm |
| ISBN: | 9783527408382 |
Internformat
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| 245 | 1 | 0 | |a Handbook of nitride semiconductors and devices |n 2 |p Electronic and optical process in nitrides |c Hadis Morkoç |
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Datensatz im Suchindex
| _version_ | 1819317162369613824 |
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| adam_text | HADIS MORKOG HANDBOOK OF NITRIDE SEMICONDUCTORS AND DEVICES VOL. 2:
MATERIALS PROPERTIES, PHYSICS AND GROWTH WILEY- VCH WILEY-VCH VERLAG
GMBH & CO. KGAA CONTENTS PREFACE XIII COLOR TABLES XXI 1 METAL CONTACTS
TO GAN AND PROCESSING 1 INTRODUCTION 1 1.1 A PRIMER FOR
SEMICONDUCTOR-METAL CONTACTS 2 1.2 CURRENT FLOW IN METAL-SEMICONDUCTOR
JUNCTIONS 6 1.2.1 THE REGIME DOMINATED BY THERMIONIC EMISSION 10 1.2.2
THERMIONIC FIELD EMISSION REGIME 12 1.2.3 DIRECT TNNNELING REGIME 20
1.2.4 LEAKAGE CURRENT 24 1.3 GAN SCHOTTKY BARRIERS FOR HIGH-VOLTAGE
RECTIFIERS 33 1.4 OHMIC CONTACT RESISTANCE 38 1.4.1 SPECIFIC CONTACT
RESISTIVITY 38 1.4.2 SEMICONDUCTOR RESISTANCE 39 1.5 DETERMINATION OF
THE CONTACT RESISTIVITY 40 1.6 OHMIC CONTACTS TO GAN 46 1.6.1 NONALLOYED
OHMIC CONTACTS 46 1.6.2 ALLOYED OHMIC CONTACTS ON N-TYPE GAN 47 1.6.3
CONTACTS TO P-TYPE GAN AND TRANSPARENT CONDUCTING OXIDES 53 1.6.4 EFFECT
OF SURFACE TREATMENT ON OHMIC CONTACTS 56 1.6.5 CASE OF A FORWARD-BIASED
P-N JUNCTION IN CONJUNCTION WITH NONOHMIC CONTACTS TO P-GAN 58 1.7
STRUCTURAL ANALYSIS OF OHMIC CONTACTS ON GAN 60 1.8 ETCHING TECHNIQUES
FOR III NITRIDES 65 1.8.1 DRY (PLASMA) ETCHING 66 1.8.1.1 ELECTRON
CYCLOTRON RESONANCE ETCHING 67 1.8.1.2 ION MILLING 71 1.8.1.3 REACTIVE
ION ETCHING 73 HANDBOOK OF NITRIDE SEMICONDUCTORS AND DEVICES. VOL. 2.
HADIS MORKO COPYRIGHT 2008 WILEY-VCH VERLAG GMBH & CO. KGAA, WEINHEIM
ISBN: 978-3-527-40838-2 VI CONTENTS 1.8.1.4 INDUCTIVELY COUPLED PLASMA
ETCHING 75 1.8.1.5 SELECTIVE ETCHING OF GAN/ALGAN 77 1.8.1.6 DRY ETCHING
OFP-GAN 78 1.8.1.7 DRY ETCHING ON GA- AND N-FACE OF FREESTANDING GAN
SUBSTRATE 78 1.8.1.8 MAGNETRON REACTIVE ION ETCHING 79 1.8.1.9
CHEMICALLY ASSISTED ION BEAM ETCHING (CAIBE) 80 1.8.1.10 RF PLASMA
ETCHING OF GAN 81 1.8.2 LASER ABLATION ETCHING OF GAN 83 1.8.3 WET
ETCHING 84 1.8.4 PHOTOCHEMICAL ETCHING 92 1.9 IMPLANT ISOLATION 99 1.10
PROCESS DAMAGE 102 REFERENCES 108 2 DETERMINATION OFLMPURITY AND CARRIER
CONCENTRATIONS 121 INTRODUCTION 121 2.1 IMPURITY BINDING ENERGY 121 2.2
CONDUCTIVITY TYPE: HOT PROBE AND HALL MEASUREMENTS 122 2.2.1 MEASUREMENT
OF MOBILITY 122 2.3 SEMICONDUCTOR STATISTICS, DENSITY OF STATES, AND
CARRIER CONCENTRATION 125 2.3.1 DEGENERACY FACTOR 132 2.3.2 CHARGE
BALANCE EQUATION AND CARRIER CONCENTRATION 135 2.3.2.1 N-TYPE
SEMICONDUCTOR 136 2.3.2.2 P-TYPE SEMICONDUCTOR 142 2.3.2.3 MULTIPLE
OCCUPANCY OF THE VALENCE BANDS 146 2.4 CAPACITANCE-VORTAGE MEASUREMENTS
147 APPENDIX 2.A. FERMI INTEGRAL 158 APPENDIX 2.B. DENSITY OF STATES IN
3D, 2D, AND ID SYSTEMS 159 2.B.I. THREE-DIMENSIONAL STRUCTURE 159 2.B.2.
TWO-DIMENSIONAL STRUCTURE 160 2.B.3. ONE-DIMENSIONAL STRUCTURE 161
REFERENCES 162 3 CARRIER TRANSPORT 165 3.1 PRELUDE 165 3.2 CARRIER
SCATTERING 169 3.2.1 BOLTZMANN TRANSPORT EQUATION 171 3.2.2 IMPURITY
SCATTERING 182 3.2.2.1 IONIZED IMPURITY SCATTERING 183 3.2.2.2 NEUTRAL
IMPURITY SCATTERING 190 3.2.3 ACOUSTIC PHONON SCATTERING 192 3.2.3.1
DEFORMATION POTENTIAL SCATTERING 194 3.2.3.2 PIEZOELECTRIC SCATTERING
198 3.2.4 OPTICAL PHONON SCATTERING 201 CONTENTS VII 3.2.4.1 NONPOLAR
OPTICAL PHONON SCATTERING 201 3.2.4.2 POLAR OPTICAL PHONON SCATTERING
203 3.2.5 SHORT-RANGE POTENTIAL-INDUCED SCATTERING 210 3.2.5.1 ALLOY
POTENTIAL-INDUCED SCATTERING 212 3.2.5.2 POTENTIAL BARRIER SCATTERING
216 3.2.5.3 POTENTIAL WELL SCATTERING 218 3.2.5.4 SPACE CHARGE
SCATTERING 218 3.2.5.5 DIPOLE SCATTERING 219 3.2.6 CARRIER-CARRIER
SCATTERING 222 3.2.7 PLASMON SCATTERING 223 3.2.8 BOUNDARY SCATTERING
225 3.2.9 DISLOCATION SCATTERING 225 3.2.10 EFFECT OF INHOMOGENEITIES ON
MOBILITY 231 3.3 CALCULATED MOBILITY OFGAN 232 3.4 SCATTERING AT HIGH
FIELDS 239 3.4.1 TRANSPORT AT HIGH FIELDS: ENERGY AND MOMENTUM
RELAXATION TIMES 247 3.4.2 ELECTRON-PHONON INTERACTION 248 3.4.2.1 POLAR
OPTICAL PHONON SCATTERING 250 3.4.2.2 NONPOLAR OPTICAL PHONON SCATTERING
251 3.4.2.3 ACOUSTIC PHONON (DEFORMATION POTENTIAL) SCATTERING 251
3.4.2.4 ACOUSTIC PHONON PIEZOELECTRIC SCATTERING 251 3.4.3 HIGH-FIELD
TRANSPORT IN SINGLE- AND MULTIVALLEY MODELS 252 3.5 MEASUREMENTS OF
MOBILITY AND ASSOCIATED FUNDAMENTALS 261 3.5.1 MAGNETORESISTANCE 261
3.5.2 HALL EFFECT AND PHYSICAL MAGNETORESISTANCE 268 3.5.2.1 FIRST-ORDER
MOBILITY MEASUREMENT: A TEXTBOOK CASE 270 3.5.2.2 HIGHER ORDER MOBILITY
MEASUREMENTS WITH ENERGY-DEPENDENT RELAXATION TIME AND HALL FACTOR 274
3.5.2.2.1 ENERGY-INDEPENDENT RELAXATION TIME AND ARBITRARY B 275
3.5.2.2.2 ENERGY-DEPENDENT RELAXATION TIME 276 3.5.3 GEOMETRIE
MAGNETORESISTANCE (GMR) 281 3.5.3.1 ENERGY-DEPENDENT RELAXATION TIME B *
0 AND C T 281 3.5.3.2 ENERGY-DEPENDENT RELAXATION TIME AND HIGH B
FIELD, C T ;» 1 282 3.5.4 HALL FACTOR 282 3.6 MULTIBAND EFFECTS AND
MIXED CONDUCTIVITY 283 3.6.1 ENERGY-DEPENDENT RELAXATION TIME WITH LOW B
FIELD (CO C T S 1) 286 3.6.2 ENERGY-DEPENDENT RELAXATION TIME AND HIGH
B FIELD ( » C T FOR BOTH CARRIERS) 286 3.6.3 ENERGY-DEPENDENT RELAXATION
TIME AND HIGH B FIELD, B^OO 287 3.6.4 QUANTITATIVE MOBILITY SPECTRUM
ANALYSIS 289 3.7 VAN DER PAUW METHOD 295 3.8 QUANTUM HALL EFFECT -
SHUBNIKOV-DE HAAS 301 3.9 MEASURED MOBILITY IN N-TYPE GAN 315 3.9.1
MOBILITY IN GAN 315 VIII CONTENTS 3.9.2 DELINEATION OF MULTIPLE
CONDUCRION LAYER MOBILITIES 326 3.9.3 TRANSPORT ALONG THE C-DIRECTION
329 3.10 MEASUREMENT OF HIGH-FIELD ELECTRON VELOCITY IN N-TYPE GAN 330
3.11 CARRIER TRANSPORT IN P-TYPE GAN 333 3.12 CARRIER TRANSPORT IN INN
335 3.13 CARRIER TRANSPORT IN ALN 339 3.14 TRANSPORT IN UNINTENTIONALLY
DOPED AND HIGH-RESISTIVITY GAN 341 3.15 CARRIER TRANSPORT IN ALLOYS 343
3.16 TWO-DIMENSIONAL TRANSPORT IN N-TYPE GAN 348 3.16.1 GENERAL
SCATTERING THEORY IN 2D SYSTEMS 351 3.16.1.1 IONIZED IMPURITY SCATTERING
IN 2D SYSTEMS 356 3.16.1.2 ACOUSTIC PHONON DEFORMATION POTENTIAL
SCATTERING 358 3.16.1.3 ACOUSTIC PHONON PIEZOELECTRIC POTENTIAL
SCATTERING 359 3.16.1.4 POLAR OPTICAL PHONON SCATTERING 360 3.16.2 A
GENERAL DISCUSSION OF ELECTRON MOBILITY IN ALGAN/GAN 2D SYSTEM 361
3.16.3 LOW-FIELD TRANSPORT IN 2DEG SYSTEMS 367 3.16.3.1 LOW TEMPERATURE
368 3.16.3.2 HIGH TEMPERATURE 369 3.16.3.3 INTERFACE PHONON SCATTERING
369 3.16.3.4 FROEHLICH SCATTERING IN TWO-DIMENSIONAL ELECTRON GAS 369
3.16.4 NUMERICAL TWO-DIMENSIONAL ELECTRON GAS MOBILITY CAKULATIONS 370
3.16.5 TWO-DIMENSIONAL HOLE GAS 378 3.17 INTERFACE ROUGHNESS SCATTERING
385 3.18 QUANTUM TRANSPORT IN ALGAN/GAN 2DEG 388 3.19 OBSERVATIONS 394
REFERENCES 395 4 THE P-N JUNCTION 409 INTRODUCTION 409 4.1
HETEROJUNCTIONS 409 4.2 BAND DISCONTINUITIES 410 4.2.1 GAN/ALN
HETEROSTRUCTURES 414 4.2.2 GAN/INN AND ALN/INN 416 4.3 ELECTROSTATIC
CHARACTERISTICS OF P-N HETEROJUNCTIONS 428 4.4 CURRENT-VOLTAGE
CHARACTERISTICS OF P-N JUNCTIONS 435 4.4.1 GENERATION-RECOMBINATION
CURRENT 436 4.4.2 SURFACE EFFECTS 440 4.4.3 DIODE CURRENT UNDER REVERSE
BIAS 442 4.4.4 FIELD EFFECTS AND HOPPING 442 4.4.4.1 POOLE-FRENKEL
CURRENT 443 4.4.4.2 HOPPING CURRENT 449 4.4.5 AVALANCHE MULTIPLICATION
454 4.4.6 DIFFUSION CURRENT 459 4.4.7 DIODE CURRENT UNDER FORWARD BIAS
463 CONTENTS IX 4.5 I-V CHARACTERISTICS OF IDEAL GAN-BASED P-N JUNCTIONS
464 4.6 I-V CHARACTERISTICS OF GAN-BASED P-N JUNCTIONS 468 4.6.1 GAN P-N
JUNCTIONS 468 4.6.1.1 FORWARD BIAS I-V 468 4.6.1.2 REVERSE BIAS I-V 474
4.6.2 ALGAN-GAN HETEROJUNCTIONS 480 4.6.3 ALGAN HETEROJUNCTIONS 481 4.7
HIGH-VOLTAGE BLOCKING GAN AND ALGAN-BASED P-N JUNCTIONS 483 REFERENCES
485 5 OPTICAL PROCESSES IN SEMICONDUCTORS AND OPTICAL PROPERTIES OF
NITRIDE SEMICONDUCTORS AND HETEROSTRUCTURES 491 INTRODUCTION 491 5.1
BASICS OF PHOTOLUMINESCENCE 498 5.1.1 STEADY-STATE PHOTOLUMINESCENCE 499
5.1.2 RECOMBINATION STATISTICS 500 5.1.3 EFFECT OF TEMPERATURE ON PL
INTENSITY 501 5.1.4 QUANTUM EFFICIENCY 503 5.1.5 EFFECT OF EXCITATION
INTENSITY ON PL INTENSITY 504 5.1.6 DETERMINATION OF ACCEPTOR
CONCENTRATION IN N-TYPE GAN 504 5.1.7 TIME-RESOLVED LUMINESCENCE 505
5.1.8 PHOTOLUMINESCENCE EXCITATION SPECTRA 507 5.1.9 SPATIALLY AND
DEPTH-RESOLVED CATHODOLUMINESCENCE 508 5.1.10 OPTICALLY DETECTED
MAGNETIC RESONANCE 509 5.2 BAND-TO-BAND TRANSITIONS 509 5.2.1 EXCITONIC
TRANSITIONS 511 5.3 OPTICAL TRANSITIONS IN GAN 512 5.3.1 EXCITONIC
TRANSITIONS IN GAN 513 5.3.1.1 FREE EXCITONS 514 5.3.1.1.1 POLARITONS
517 5.3.1.2 BOUND EXCITONS 542 5.3.1.2.1 EXCITONS BOUND TO SHALLOW
DONORS 547 5.3.1.2.2 EXCITONS BOUND TO ACCEPTORS 560 5.3.1.3 EXCITONS IN
MAGNETIC FIELD 562 5.3.2 EXCITON RECOMBINATION DYNAMICS 575 5.3.2.1
EXCITON RECOMBINATION DYNAMICS AT LOW-TO-MEDIUM INJECTION LEVELS 578
5.3.2.2 RECOMBINATION DYNAMICS AT HIGH INJECTION LEVELS 587 5.3.3
FREE-TO-BOUND TRANSITIONS 589 5.3.4 DONOR-ACCEPTOR TRANSITIONS 591 5.3.5
LUMINESCENCE RELATED TO STRUCTURAL DEFECTS 593 5.3.5.1 EFFECT OF
EXCITATION INTENSITY 599 5.3.5.2 EFFECT OF TEMPERATURE 600 5.3.5.3
PROPERTIES OF THE YI PEAKS 606 X CONTENTS 5.3.6 EMISSION FROM DEEP-LEVEL
DEFECTS 610 5.3.6.1 YELLOW LUMINESCENCE 610 5.4 GROUP-II ELEMENT RELATED
TRANSITIONS 620 5.4.1 ROLE OF POTENTIAL FLUCTUATIONS IN GAN 620 5.4.2
ROLE OF COULOMBIC INTERACTION IN TRANSITION ENERGIES IN GAN 623 5.4.3
UVL AND BL BANDS IN COMPENSATED AND HEAVILY MG-DOPED GAN 623 5.4.4 LOCAL
STRUCTURE OF THE BLUE BAND IN GAN:MG 631 5.4.5 BLUE LUMINESCENCE BAND IN
ZN-DOPED GAN 632 5.5 BLUE LUMINESCENCE BAND IN UNDOPED GAN 633 5.5.1
CHARACTERISTICS OF BLUE LUMINESCENCE IN UNDOPED GAN 634 5.5.2 COMPARISON
OF PHOTOLUMINESCENCE IN UNDOPED AND ZN-DOPED GAN 636 5.6 SURFACE-RELATED
BLUE LUMINESCENCE IN ETCHED GAN 638 5.7 OPTICAL PROPERTIES OF GAN DOPED
WITH RARE EARTHS 642 5.7.1 LUMINESCENCE OF RARE EARTH IN GAN 643 5.7.1.1
RED EMISSION IN EU-DOPED GAN 643 5.7.1.2 RED EMISSION IN PR-DOPED GAN
648 5.7.1.3 GREEN AND INFRARED EMISSION IN ER-DOPED GAN 649 5.7.1.4 BLUE
EMISSION IN TM-DOPED GAN 652 5.8 OPTICAL PROPERTIES OF ALLOYS 653 5.8.1
LOCALIZATION IN ALLOYS 654 5.8.2 OPTICAL PROPERTIES OF ALGAN 656 5.8.3
OPTICAL PROPERTIES OF INGAN 661 5.8.4 OPTICAL PROPERTIES OFLNALN 665 5.9
OPTICAL PROPERTIES OF NITRIDE HETEROSTRUCTURES 666 5.9.1 GAN/ALGAN
QUANTUM WELLS 668 5.9.1.1 POLARIZATION AND CARRIER DYNAMICS IN GAN/ALGAN
QUANTUM WELLS 678 5.9.1.1.1 POLARIZATION IN QUANTUM WELLS WITH
IMPLICATIONS TO GAN/ALGAN WELLS 679 5.9.1.1.2 OPTICAL PROPERTIES OF
NON-C-PLANE GAN BASED STRUCTURES 687 5.9.1.1.3 CARRIER DYNAMICS IN
GAN/ALGAN QUANTUM WELLS 694 5.9.2 OPTICAL PROPERTIES OF GAN/ALGAN
MODULATION-DOPED HETEROSTRUCTURES 698 5.9.3 INGAN/GAN, INGAN/INGAN, AND
INGAALN/INGAALN QUANTUM WELLS 705 5.9.3.1 INGAN/GAN, INGAN/INGAN QUANTUM
WELLS 707 5.9.3.2 LOCALIZATION AND POLARIZATION IN INGAN QUANTUM WELLS
708 5.9.3.3 SIZE DEPENDENCE OF THE LO-PHONON COUPLING IN INGAN QUANTUM
WELLS 714 5.9.3.4 INGAALN/INGAALN QUANTUM WELLS 720 5.10 QUANTUM DOTS
723 5.10.1 EFFECTS OF QUANTUM CONFINEMENT, STRAIN AND POLARIZATION 724
5.10.2 GAN QUANTUM DOTS 729 CONTENTS XI 5.10.3 INGAN QUANTUM DOTS 740
5.11 INTRABAND OR INTERSUBBAND TRANSITIONS IN GAN/ALGAN QUANTUM WELLS
745 5.12 NONLINEAR OPTICAL PROPERTIES OF III-NITRIDES 756 5.12.1
SECOND-ORDER NONLINEAR OPTICAL PROPERTIES 762 5.12.1.1 SECOND HARMONIE
GENERATION (SHG) 762 5.12.2 THIRD-ORDER NONLINEAR OPTICAL PROPERTIES 782
5.12.2.1 INTENSITY-DEPENDENT REFRACTIVE INDEX 783 5.12.2.2 TWO-PHOTON
ABSORPTION 787 5.12.2.3 THIRD HARMONIE GENERATION (THG) 789 REFERENCES
794 INDEX 829 APPENDIX 847
|
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| id | DE-604.BV035306518 |
| illustrated | Illustrated |
| indexdate | 2024-12-20T13:28:10Z |
| institution | BVB |
| isbn | 9783527408382 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-017111311 |
| oclc_num | 635049113 |
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| owner | DE-703 DE-29T DE-210 DE-11 DE-83 |
| owner_facet | DE-703 DE-29T DE-210 DE-11 DE-83 |
| physical | XXXVI, 847 S. Ill., graph. Darst. 25 cm |
| publishDate | 2008 |
| publishDateSearch | 2008 |
| publishDateSort | 2008 |
| publisher | Wiley-VCH |
| record_format | marc |
| spellingShingle | Morkoç, Hadis 1947- Handbook of nitride semiconductors and devices |
| title | Handbook of nitride semiconductors and devices |
| title_auth | Handbook of nitride semiconductors and devices |
| title_exact_search | Handbook of nitride semiconductors and devices |
| title_full | Handbook of nitride semiconductors and devices 2 Electronic and optical process in nitrides Hadis Morkoç |
| title_fullStr | Handbook of nitride semiconductors and devices 2 Electronic and optical process in nitrides Hadis Morkoç |
| title_full_unstemmed | Handbook of nitride semiconductors and devices 2 Electronic and optical process in nitrides Hadis Morkoç |
| title_short | Handbook of nitride semiconductors and devices |
| title_sort | handbook of nitride semiconductors and devices electronic and optical process in nitrides |
| url | http://www.gbv.de/dms/ilmenau/toc/558782019.PDF http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017111311&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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