Handbook of nitride semiconductors and devices: 1 Materials properties, physics and growth
Gespeichert in:
| Beteilige Person: | |
|---|---|
| Format: | Buch |
| Sprache: | Englisch |
| Veröffentlicht: |
Weinheim
Wiley-VCH
2008
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| Links: | http://deposit.dnb.de/cgi-bin/dokserv?id=3018865&prov=M&dok_var=1&dok_ext=htm http://www.gbv.de/dms/ilmenau/toc/548680140.PDF http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017111263&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| Beschreibung: | Literaturangaben |
| Umfang: | LXII, 1257 S. Ill., graph. Darst. 25 cm |
| ISBN: | 9783527408375 |
Internformat
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| 245 | 1 | 0 | |a Handbook of nitride semiconductors and devices |n 1 |p Materials properties, physics and growth |c Hadis Morkoç |
| 264 | 1 | |a Weinheim |b Wiley-VCH |c 2008 | |
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Datensatz im Suchindex
| _version_ | 1819310585249005568 |
|---|---|
| adam_text | Contents
Preface XIII
Color Tables XXI
1 General Properties of Nitrides 1
Introduction 1
1.1 Crystal Structure of Nitrides 1
1.2 Gallium Nitride 30
1.2.1 Chemical Properties of GaN 35
1.2.2 Mechanical Properties of GaN 35
1.2.3 Thermal Properties of GaN 47
1.3 Aluminum Nitride 62
1.3.1 Mechanical Properties of AlN 62
1.3.2 Thermal and Chemical Properties of AlN 66
1.3.3 Electrical Properties of AlN 69
1.3.4 Brief Optical Properties of AlN 71
1.4 Indium Nitride 75
1.4.1 Crystal Structure of InN 77
1.4.2 Mechanical Properties of InN 77
1.4.3 Thermal Properties of InN 79
1.4.4 Brief Electrical Properties of InN 81
1.4.5 Brief Optical Properties of InN 84
1.5 Ternary and Quaternary Alloys 89
1.5.1 AlGaN Alloy 90
1.5.2 InGaN Alloy 92
1.5.3 InAIN Alloy 97
1.5.4 InAlGaN Quaternary Alloy 99
1.5.5 Dilute GaAs(N) 105
References 110
VI Contents
2 Electronic Band Structure and Polarization Effects 131
Introduction 131
2.1 Band Structure Calculations 132
2.1.1 Plane Wave Expansion Method 134
2.1.2 Orthogonalized Plane Wave (OPW) Method 134
2.1.3 Pseudopotential Method 135
2.1.4 Augmented Plane Wave (APW) Method 135
2.1.5 Other Methods and a Review Pertinent to GaN 136
2.2 General Strain Considerations 154
2.3 Effect of Strain on the Band Structure of GaN 159
2.4 k-p Theory and the Quasi-Cubic Model 160
2.5 Quasi-Cubic Approximation 167
2.6 Temperature Dependence of Wurtzite GaN
Bandgap 169
2.7 Sphalerite (Zinc blende) GaN 172
2.8 A1N 176
2.8.1 Wurtzite A1N 177
2.8.2 Zinc Blende AlN 183
2.9 InN 184
2.9.1 Wurtzitic InN 185
2.9.2 Zinc Blende InN 200
2.10 Band Parameters for Dilute Nitrides 202
2.10.1 GaAsN 205
2.10.2 InAsN 208
2.10.3 InPN 209
2.10.4 InSbN 209
2.10.5 GaPN 210
2.10.6 GalnAsN 210
2.10.7 GalnPN 212
2.10.8 GaAsSbN 212
2.11 Confined States 212
2.11.1 Conduction Band 216
2.11.2 Valence Band 224
2.11.3 Exciton Binding Energy in Quantum Wells 227
2.12 Polarization Effects 230
2.12.1 Piezoelectric Polarization 236
2.12.2 Spontaneous Polarization 241
2.12.3 Nonlinearityof Polarization 245
2.12.3.1 Origin of the Nonlinearity 250
2.12.3.2 Nonlinearities in Spontaneous Polarization 253
2.12.3.3 Nonlinearities in Piezoelectric Polarization 256
2.12.4 Polarization in Heterostructures 264
2.12.4.1 Ga-Polarity Single AlGaN/GaN Interface 272
2.12.4.2 Ga-Polarity Single AlxIn1_.xN/GaN Interface 276
2.12.5 Polarization in Quantum Wells 278
Contents VII
2.12.5.1 Nonlinear Polarization in Quantum Wells 280
2.12.5.2 InGaN/GaN Quantum Wells 286
2.12.6 Effect of Dislocations on Piezoelectric Polarization 289
2.12.7 Thermal Mismatch Induced Strain 290
References 299
3 Growth and Growth Methods for Nitride Semiconductors 323
Introduction 323
3.1 Substrates for Nitride Epitaxy 324
3.1.1 Conventional Substrates 326
3.1.2 Compliant Substrates 327
3.1.3 van der Waals Substrates 328
3.2 A Primer on Conventional Substrates and their Preparation
for Growth 329
3.2.1 GaAs 329
3.2.1.1 A Primer on GaAs 330
3.2.1.2 Surface Preparation of GaAs for Epitaxy 331
3.2.2 Si 332
3.2.2.1 A Primer on Si 332
3.2.2.2 Surface Preparation of Si for Epitaxy 333
3.2.3 SiC 334
3.2.3.1 A Primer on SiC 334
3.2.3.2 Surface Preparation of SiC for Epitaxy 338
3.2.4 Sapphire 342
3.2.4.1 A Primer on Sapphire 343
3.2.4.2 Surface Preparation of Sapphire for Epitaxy 346
3.2.5 ZnO 350
3.2.5.1 A Primer on ZnO 351
3.2.5.2 Substrate Preparation for Epitaxy 353
3.2.6 LiGaO2 and LiAlO2 355
3.2.6.1 LiGaO2 Substrates 355
3.2.6.2 LiAlO2 Substrates 358
3.2.7 A1N and GaN 359
3.2.7.1 Seedless Growth of GaN 362
3.2.7.1.1 Seedless Growth of GaN by High Nitrogen Pressure Solution
Growth (HNPSG) for Substrates 362
3.2.7.1.2 Seeded Growth of GaN by HNPSG Method for Substrates 363
3.2.7.2 Pertinent Surfaces of GaN 365
3.2.7.3 GaN Surface Preparation for Epitaxy 369
3.2.8 Other Substrates 371
3.3 GaN Epitaxial Relationship to Substrates 372
3.3.1 Epitaxial Relationship of GaN and A1N with Sapphire 372
3.3.2 Epitaxial Relationship of GaN and A1N with SiC 381
3.3.3 Epitaxial Relationship of GaN and AlN with Si 381
3.3.4 Epitaxial Relationship of GaN with ZnO 382
VIII Contents
3.3.5 Epitaxial Relationship of GaN with LiGaO2 and LiAlO2 and
Perovskites 382
3.4 Nitride Growth Techniques 384
3.4.1 Vapor Phase Epitaxy 385
3.4.1.1 Hydride Vapor Phase Epitaxy 385
3.4.1.2 Organometalic Vapor Phase Epitaxy 393
3.4.1.3 Modeling of OMVPE Growth 398
3.4.1.3.1 Thermal Decomposition of GaN as it Relates to Growth 398
3.4.1.3.2 Ga and N Precursor Adsorption and Decomposition 400
3.4.1.3.3 Ga and N2 Desorption from the Surface 401
3.4.1.3.4 Ga and N Surface Diffusion 403
3.4.1.3.5 Kinetic Model: Balance Between Adsorption and Desorption 405
3.4.1.3.6 Comparison of Model with Growth Conditions for Surface
Morphology 406
3.4.2 Molecular Beam Epitaxy 409
3.4.2.1 Adsorption 411
3.4.2.2 Desorption 412
3.4.2.3 Surface Diffusion 413
3.4.2.4 Incorporation 425
3.4.2.5 Decomposition 416
3.4.2.6 Reflection High-Energy Electron Diffraction 417
3.4.2.7 Plasma-Assisted MBE (PAMBE) or RF MBE, Primarily N
Source 428
3.4.2.8 Reactive Ion MBE 435
3.4.2.9 Principles ofRMBE and PAMBE Growth 436
3.4.2.9.1 Growth by RMBE 437
3.4.2.9.2 Growth by PAMBE 446
3.4.2.9.3 Which Species ofN is Desirable? 451
3.4.2.9.4 The Effect of HI/V Ratio and Substrate Temperature on Surface
Morphology 455
3.5 The Art and Technology of Growth of Nitrides 462
3.5.1 Sources 467
3.5.1.1 HVPE Buffer Layers and Laser Liftoff 468
3.5.1.2 Benchmark HVPE Layers/Templates 472
3.5.2 Growth on GaAs Substrates 477
3.5.3 Growth on SiC: Nucleation Layers and GaN 479
3.5.3.1 Stacking and Interfacial Relationship 480
3.5.3.2 Nucleation Layers on SiC 482
3.5.3.2.1 High-Temperature AlN Nucleation Layers on SiC 486
3.5.3.2.2 Low-Temperature GaN Nucleation Layers on SiC 488
3.5.3.2.3 High-Temperature GaN Nucleation Layers on SiC 489
3.5.3.2.4 Alloy and Multiple Layer Nucleation Layers on SiC 491
3.5.3.2.5 Nucleation Layers on SiC by MBE 492
3.5.3.3 Substrate Misorientation and Domain Boundaries 495
3.5.3.4 Polarity of GaN on SiC 498
Contents IX
3.5.3.4.1 GaN Growth on SiC 499
3.5.3.5 Growth on Porous SiC 503
3.5.3.6 Zinc Blende Phase Growth 507
3.5.4 Growth on Si 507
3.5.5 Growth on Sapphire 512
3.5.5.1 OMVPE Low-Temperature Nucleation Buffer Layers 513
3.5.5.1.1 The Effect of V/III Ratio on Nucleation Buffer Layer 523
3.5.5.1.2 Effect of Epitaxial Growth Temperature 525
3.5.5.1.3 Effect of Process Pressure 525
3.5.5.2 Epitaxial Lateral Overgrowth 528
3.5.5.2.1 Selective Epitaxial Growth and Lateral Epitaxial Overgrowth
with HVPE 537
3.5.5.2.2 Lateral Epitaxial Overgrowth on Si 539
3.5.5.2.3 Pendeo-Epitaxy 540
3.5.5.2.4 Pendeo-Epitaxy on SiC Substrates 542
3.5.5.2.5 Pendeo-Epitaxy on Silicon Substrates 544
3.5.5.2.6 Point Defect Distribution in ELO Grown GaN 558
3.5.5.3 Nanoheteroepitaxy and Nano-ELO 564
3.5.5.3.1 SiN and TiN Nanonets 569
3.5.5.4 Selective Growth Using W Masks 583
3.5.5.5 Low-Temperature Buffer Interlayer 584
3.5.6 Polarity and Surface Structure of GaN Layers, Particularly on
Sapphire 586
3.5.6.1 MBE Buffer Layers 597
3.5.7 Growth on ZnO Substrates 598
3.5.8 Growth on LiGaO2 and LiAlO2 Substrates 603
3.5.9 Growth on GaN Templates 605
3.5.10 Growth on Spinel (MgAl2O4) 611
3.5.11 Growth on Non c-Plane Substrates 611
3.5.11.1 The a-Plane GaN Growth 613
3.5.11.2 Epitaxial Lateral Overgrowth of a-plane GaN 626
3.5.11.3 The (1100) m-Plane GaN Growth 623
3.5.12 Growth of p-Type GaN 627
3.5.13 Growth of InN 629
3.5.14 Growth of A1N 638
3.5.14.1 Surface Reconstruction of AlN 642
3.5.15 Growth of Ternary and Quaternary Alloys 652
3.5.15.1 Growth of AlGaN 653
3.5.15.1.1 Growth of p-Type AlGaN 666
3.5.15.1.2 Ordering in AlGaN 668
3.5.15.2 Growth of InGaN 671
3.5.15.2.1 Doping of InGaN 678
3.5.15.2.2 Phase Separation in InGaN 679
3.5.15.2.3 Surface Reconstruction of InGaN 689
3.5.15.3 Growth of AlInN 695
X Contents
3.5.15.3.1 Miscibility Gap in InAlN 697
3.5.15.4 InGaAIN Quaternary Alloy 699
3.5.16 Growth of Quantum Dots 706
3.5.16.1 Quantum Dots by MBE 711
3.5.16.2 Quantum Dots by OMVPE 719
3.5.16.3 Quantum Dots by Other Techniques 723
3.5.16.4 Preparation and Properties of Nanostructures 725
3.5.16.4.1 Approaches for Synthesis 726
3.5.16.4.2 Vapor Phase Growth 726
3.5.16.5 Nanowires and Longitudinal Heterostructures 737
3.5.16.5.1 Coaxial Heterostructures 755
3.5.16.5.2 Nanotubes 756
3.6 Concluding Remarks 759
References 760
4 Extended and Point Defects, Doping, and Magnetism 817
Introduction 817
4.1 A Primer on Extended Defects 818
4.1.1 Dislocations 819
4.1.1.1 Misfit Dislocations 822
4.1.1.2 Threading Dislocations 822
4.1.1.2.1 Edge Dislocations 824
4.1.1.2.2 Screw Dislocations 828
4.1.1.2.3 Mixed Dislocations 836
4.1.2 Nanopipes or Hollow Pipes 840
4.1.3 Planar Defects: Domain Boundaries 844
4.1.4 Stacking Faults 851
4.1.5 Grain Boundaries 862
4.1.6 Electronic Structure of Extended Defects 863
4.1.6.1 Open Core Versus Close Core in Screw Dislocations 865
4.1.6.2 Edge and Mixed Dislocations 866
4.1.6.3 Simple Stacking Faults: Electrical Nature 884
4.2 TEM Analysis of High Nitrogen Pressure (HNP) Solution
Growth (HNPSG) and HVPE-Grown GaN 886
4.2.1 Extended Defect Characterization 887
4.2.2 Pyramidal Defects 894
4.2.3 V-Shaped Defects (Pits) in InGaN Multiple Quantum
Wells (MQWs) 905
4.2.4 Structural Defect Analysis by Chemical Etch Delineation 905
4.2.5 Structural Defect Observations with Surface Probes 910
4.3 Point Defects and Autodoping 917
4.3.1 Theoretical Studies of Point Defects in GaN 919
4.3.1.1 Hydrogen and Impurity Trapping at Extended Defects 924
4.3.1.2 Vacancies, Antisites, Interstitials, and Complexes 928
4.3.1.2.1 Vacancies 929
Contents XI
4.3.1.2.2 Interstitials and Antisite Defects 934
4.3.2 Complexes 935
4.3.2.1 Shallow Donor - Gallium Vacancy Complexes 936
4.3.2.2 Shallow Acceptor - Nitrogen Vacancy Complexes 936
4.3.2.3 Hydrogen-Related Complexes 937
4.3.2.4 Other Complexes 938
4.4 Defect Analysis by Deep-Level Transient Spectroscopy 938
4.4.1 Basics of DLTS 939
4.4.2 Applications of DLTS to GaN 948
4.4.3 Dispersion in DLTS of GaN 970
4.4.4 Applications of DLTS to AlGaN, In-Doped AlGaN, and InAlN 977
4.5 Minority Carrier Lifetime 977
4.6 Positron Annihilation 982
4.6.1 Vacancy Defects and Doping in Epitaxial GaN 983
4.6.2 Growth Kinetics and Thermal Behavior of Vacancy Defects in GaN 993
4.7 Fourier Transform Infrared (FTIR), Electron Paramagnetic Resonance,
and Optical Detection of Magnetic Resonance 998
4.8 Role of Hydrogen 1004
4.9 Intentional Doping 1006
4.9.1.1 Shallow Donors 1007
4.9.1.2 Substitutional Acceptors 1007
4.9.1.3 Isoelectronic Impurities 1009
4.9.2 n-Type Doping with Silicon, Germanium, Selenium, and
Oxygen 1010
4.9.2.1 Si Doping 1010
4.9.2.2 Ge Doping 3023
4.9.2.3 Se Doping 1012
4.9.2.4 p-Type Doping 1013
4.9.3 p-Type Doping and Codoping with Donors and Acceptors 1014
4.9.3.1 Magnesium Doping 1014
4.9.3.1.1 Codoping for Improving p-Type Conductivity 3039
4.9.3.1.2 Use of Superlattices for Improving p-Type Conductivity 3032
4.9.3.1.3 Role of Hydrogen and Defects in Mg-Doped GaN 3034
4.9.3.2 Beryllium Doping 1038
4.9.3.3 Mercury Doping 1040
4.9.3.4 Carbon Doping 3040
4.9.3.5 Zinc Doping 1042
4.9.3.6 Calcium Doping 1042
4.9.3.7 Cadmium Doping 3043
4.9.3.8 Other Acceptors in GaN 1043
4.9.4 Doping with Isoelectronic Impurities 3044
4.9.4.1 Arsenic Doping 1044
4.9.4.2 Phosphorus Doping 3045
4.9.5 Doping with Rare Earths 1045
4.9.6 Doping with Transition Metals and Rare Earths 3046
XII Contents
4.9.6.1 Manganese Doping for Electronic Properties 1046
4.9.6.2 Other TM Doping for Electronic Properties 1060
4.9.6.3 General Remarks About Dilute Magnetic Semiconductors 2063
4.9.6.4 General Remarks About Spintronics 2075
4.9.6.5 Theoretical Aspects of Dilute Magnetic Semiconductor 1082
4.9.6.5.1 Carrier - Single Magnetic Ion Interaction 1084
4.9.6.5.2 Interaction Between Magnetic Ions 1086
4.9.6.5.3 Zener, Mean Field, RKKY, and Ab Initio Treatments 1089
4.9.6.6 A Primer to Magnetotransport Measurements 1103
4.9.6.6.1 Faraday Rotation, Kerr Effect, and Magnetic Circular
Dichroism (MCD) 1104
4.9.6.7 II-VI and GaAs-Based Dilute Magnetic Semiconductors 1123
4.9.6.7.1 II-VI-Based Dilute Magnetic Semiconductors 1124
4.9.6.7.2 III-V-Based DMS: (GaMn)As 1133
4.9.7 Experimental Results of TM-Doped GaN 1141
4.9.7.1 Magnetotransport Properties TM-Doped GaN 1141
4.9.7.2 Magnetic Properties of Mn-Doped GaN 1143
4.9.7.3 Magneto-Optical Measurements in TM-Doped GaN 1146
4.9.8 Magnetic, Structural, Optical, and Electrical Properties of
Cr-DopedGaN 1156
4.9.9 Other TM and Rare Earth Doped GaN:(Co, Fe, V, Gd,
and so on) 1163
4.9.10 TM-Doped Nanostrucrures 1166
4.9.11 Applications of Ferromagnetism and Representative Devices 1167
4.9.12 Summarizing Comments on Ferromagnetism 1186
4.10 Ion Implantation and Diffusion for Doping 1188
4.11 Summary 2290
References 2292
Index 2232
Appendix 2257
|
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| id | DE-604.BV035306471 |
| illustrated | Illustrated |
| indexdate | 2024-12-20T13:28:10Z |
| institution | BVB |
| isbn | 9783527408375 |
| language | English |
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| record_format | marc |
| spellingShingle | Morkoç, Hadis 1947- Handbook of nitride semiconductors and devices |
| title | Handbook of nitride semiconductors and devices |
| title_auth | Handbook of nitride semiconductors and devices |
| title_exact_search | Handbook of nitride semiconductors and devices |
| title_full | Handbook of nitride semiconductors and devices 1 Materials properties, physics and growth Hadis Morkoç |
| title_fullStr | Handbook of nitride semiconductors and devices 1 Materials properties, physics and growth Hadis Morkoç |
| title_full_unstemmed | Handbook of nitride semiconductors and devices 1 Materials properties, physics and growth Hadis Morkoç |
| title_short | Handbook of nitride semiconductors and devices |
| title_sort | handbook of nitride semiconductors and devices materials properties physics and growth |
| url | http://deposit.dnb.de/cgi-bin/dokserv?id=3018865&prov=M&dok_var=1&dok_ext=htm http://www.gbv.de/dms/ilmenau/toc/548680140.PDF http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017111263&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV023420312 |
| work_keys_str_mv | AT morkochadis handbookofnitridesemiconductorsanddevices1 |