Impact ionization: numerical treatment for semiconductor device simulation
Gespeichert in:
| Beteilige Person: | |
|---|---|
| Format: | Buch |
| Sprache: | Englisch |
| Veröffentlicht: |
Saarbrücken
VDM Verl. Dr. Müller
2008
|
| Schlagwörter: | |
| Abstract: | This work "...briefly introduces the theory needed for a physical understanding of the impact ionization process in semiconductors. It focuses...on computational aspects and empirical numerical studies explaining a way to efficiently calculate impact ionization rates, especially applied to silicon for semiconductor device simulation"--Back cover. |
| Umfang: | 116 S. |
| ISBN: | 9783639082968 |
Internformat
MARC
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| 020 | |a 9783639082968 |9 978-3-63908296-8 | ||
| 035 | |a (OCoLC)374675504 | ||
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| 100 | 1 | |a May, Christian Peter |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Impact ionization |b numerical treatment for semiconductor device simulation |c Christian Peter May |
| 264 | 1 | |a Saarbrücken |b VDM Verl. Dr. Müller |c 2008 | |
| 300 | |a 116 S. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 520 | 3 | |a This work "...briefly introduces the theory needed for a physical understanding of the impact ionization process in semiconductors. It focuses...on computational aspects and empirical numerical studies explaining a way to efficiently calculate impact ionization rates, especially applied to silicon for semiconductor device simulation"--Back cover. | |
| 650 | 4 | |a Electron impact ionization | |
| 650 | 4 | |a Numerical analysis | |
| 650 | 4 | |a Semiconductors | |
| 650 | 4 | |a Silicon | |
| 650 | 0 | 7 | |a Ladungstransport |0 (DE-588)4166400-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Simulation |0 (DE-588)4055072-2 |2 gnd |9 rswk-swf |
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| 689 | 0 | 2 | |a Simulation |0 (DE-588)4055072-2 |D s |
| 689 | 0 | |5 DE-604 | |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-016965104 | |
Datensatz im Suchindex
| DE-BY-TUM_call_number | 0002 ELT 303f 2008 A 9937 |
|---|---|
| DE-BY-TUM_katkey | 1655040 |
| DE-BY-TUM_location | 00 |
| DE-BY-TUM_media_number | 040006971195 |
| _version_ | 1821934456500387840 |
| any_adam_object | |
| author | May, Christian Peter |
| author_facet | May, Christian Peter |
| author_role | aut |
| author_sort | May, Christian Peter |
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| building | Verbundindex |
| bvnumber | BV035157944 |
| callnumber-first | Q - Science |
| callnumber-label | QC702 |
| callnumber-raw | QC702.7.E38 |
| callnumber-search | QC702.7.E38 |
| callnumber-sort | QC 3702.7 E38 |
| callnumber-subject | QC - Physics |
| classification_tum | ELT 303f DAT 780f |
| ctrlnum | (OCoLC)374675504 (DE-599)BVBBV035157944 |
| discipline | Informatik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV035157944 |
| illustrated | Not Illustrated |
| indexdate | 2024-12-20T13:24:26Z |
| institution | BVB |
| isbn | 9783639082968 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-016965104 |
| oclc_num | 374675504 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM |
| owner_facet | DE-91 DE-BY-TUM |
| physical | 116 S. |
| publishDate | 2008 |
| publishDateSearch | 2008 |
| publishDateSort | 2008 |
| publisher | VDM Verl. Dr. Müller |
| record_format | marc |
| spellingShingle | May, Christian Peter Impact ionization numerical treatment for semiconductor device simulation Electron impact ionization Numerical analysis Semiconductors Silicon Ladungstransport (DE-588)4166400-0 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Simulation (DE-588)4055072-2 gnd |
| subject_GND | (DE-588)4166400-0 (DE-588)4113826-0 (DE-588)4055072-2 |
| title | Impact ionization numerical treatment for semiconductor device simulation |
| title_auth | Impact ionization numerical treatment for semiconductor device simulation |
| title_exact_search | Impact ionization numerical treatment for semiconductor device simulation |
| title_full | Impact ionization numerical treatment for semiconductor device simulation Christian Peter May |
| title_fullStr | Impact ionization numerical treatment for semiconductor device simulation Christian Peter May |
| title_full_unstemmed | Impact ionization numerical treatment for semiconductor device simulation Christian Peter May |
| title_short | Impact ionization |
| title_sort | impact ionization numerical treatment for semiconductor device simulation |
| title_sub | numerical treatment for semiconductor device simulation |
| topic | Electron impact ionization Numerical analysis Semiconductors Silicon Ladungstransport (DE-588)4166400-0 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Simulation (DE-588)4055072-2 gnd |
| topic_facet | Electron impact ionization Numerical analysis Semiconductors Silicon Ladungstransport Halbleiterbauelement Simulation |
| work_keys_str_mv | AT maychristianpeter impactionizationnumericaltreatmentforsemiconductordevicesimulation |
Paper/Kapitel scannen lassen
Teilbibliothek Stammgelände
| Signatur: |
0002 ELT 303f 2008 A 9937 Lageplan |
|---|---|
| Exemplar 1 | Ausleihbar Am Standort |