Verfügbarkeit: CMOS | Technische Universität München

CMOS: circuit design, layout, and simulation

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Bibliographische Detailangaben
Beteiligte Personen:	Baker, Russel Jacob 1964- (VerfasserIn), Li, Harry W. (VerfasserIn), Boyce, David E. (VerfasserIn)
Format:	Buch
Sprache:	Englisch
Veröffentlicht:	Piscataway, NJ IEEE Press 1998
Schriftenreihe:	IEEE Press series on microelectronic systems
Schlagwörter:	CIRCUITOS INTEGRADOS Circuitos integrados - Disen̋o y construcción Semiconductores de metal-oxido complementarios - Disen̋o y construcción Transistores de efecto de campo metal-oxido semiconductores Integrated circuit layout Integrated circuits > Design and construction Metal oxide semiconductor field-effect transistors Metal oxide semiconductors, Complementary > Design and construction Entwurf Integrierte Schaltung CMOS-Schaltung Simulation MOS-FET CMOS Schaltungsentwurf
Umfang:	XXIV, 902 S.
ISBN:	0780334167

Internformat

MARC


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Datensatz im Suchindex

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any_adam_object
author	Baker, Russel Jacob 1964- Li, Harry W. Boyce, David E.
author_GND	(DE-588)138111715
author_facet	Baker, Russel Jacob 1964- Li, Harry W. Boyce, David E.
author_role	aut aut aut
author_sort	Baker, Russel Jacob 1964-
author_variant	r j b rj rjb h w l hw hwl d e b de deb
building	Verbundindex
bvnumber	BV024448718
callnumber-first	T - Technology
callnumber-label	TK7871
callnumber-raw	TK7871.99.M44
callnumber-search	TK7871.99.M44
callnumber-sort	TK 47871.99 M44
callnumber-subject	TK - Electrical and Nuclear Engineering
classification_rvk	ZN 4960
ctrlnum	(OCoLC)916199444 (DE-599)BVBBV024448718
dewey-full	621.3815
dewey-hundreds	600 - Technology (Applied sciences)
dewey-ones	621 - Applied physics
dewey-raw	621.3815
dewey-search	621.3815
dewey-sort	3621.3815
dewey-tens	620 - Engineering and allied operations
discipline	Elektrotechnik / Elektronik / Nachrichtentechnik
format	Book
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id	DE-604.BV024448718
illustrated	Not Illustrated
indexdate	2024-12-20T13:55:40Z
institution	BVB
isbn	0780334167
language	English
oai_aleph_id	oai:aleph.bib-bvb.de:BVB01-018425387
oclc_num	916199444
open_access_boolean
owner	DE-83 DE-706 DE-634
owner_facet	DE-83 DE-706 DE-634
physical	XXIV, 902 S.
publishDate	1998
publishDateSearch	1998
publishDateSort	1998
publisher	IEEE Press
record_format	marc
series2	IEEE Press series on microelectronic systems
spelling	Baker, Russel Jacob 1964- Verfasser (DE-588)138111715 aut CMOS circuit design, layout, and simulation R. Jacob Baker, Harry W. Li and David E. Boyce Piscataway, NJ IEEE Press 1998 XXIV, 902 S. txt rdacontent n rdamedia nc rdacarrier IEEE Press series on microelectronic systems CIRCUITOS INTEGRADOS larpcal Circuitos integrados - Disen̋o y construcción Semiconductores de metal-oxido complementarios - Disen̋o y construcción Transistores de efecto de campo metal-oxido semiconductores Integrated circuit layout Integrated circuits Design and construction Metal oxide semiconductor field-effect transistors Metal oxide semiconductors, Complementary Design and construction Entwurf (DE-588)4121208-3 gnd rswk-swf Integrierte Schaltung (DE-588)4027242-4 gnd rswk-swf CMOS-Schaltung (DE-588)4148111-2 gnd rswk-swf Simulation (DE-588)4055072-2 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf CMOS (DE-588)4010319-5 gnd rswk-swf Schaltungsentwurf (DE-588)4179389-4 gnd rswk-swf MOS-FET (DE-588)4207266-9 s DE-604 Integrierte Schaltung (DE-588)4027242-4 s Entwurf (DE-588)4121208-3 s CMOS (DE-588)4010319-5 s Schaltungsentwurf (DE-588)4179389-4 s CMOS-Schaltung (DE-588)4148111-2 s 1\p DE-604 Simulation (DE-588)4055072-2 s 2\p DE-604 Li, Harry W. Verfasser aut Boyce, David E. Verfasser aut 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk
spellingShingle	Baker, Russel Jacob 1964- Li, Harry W. Boyce, David E. CMOS circuit design, layout, and simulation CIRCUITOS INTEGRADOS larpcal Circuitos integrados - Disen̋o y construcción Semiconductores de metal-oxido complementarios - Disen̋o y construcción Transistores de efecto de campo metal-oxido semiconductores Integrated circuit layout Integrated circuits Design and construction Metal oxide semiconductor field-effect transistors Metal oxide semiconductors, Complementary Design and construction Entwurf (DE-588)4121208-3 gnd Integrierte Schaltung (DE-588)4027242-4 gnd CMOS-Schaltung (DE-588)4148111-2 gnd Simulation (DE-588)4055072-2 gnd MOS-FET (DE-588)4207266-9 gnd CMOS (DE-588)4010319-5 gnd Schaltungsentwurf (DE-588)4179389-4 gnd
subject_GND	(DE-588)4121208-3 (DE-588)4027242-4 (DE-588)4148111-2 (DE-588)4055072-2 (DE-588)4207266-9 (DE-588)4010319-5 (DE-588)4179389-4
title	CMOS circuit design, layout, and simulation
title_auth	CMOS circuit design, layout, and simulation
title_exact_search	CMOS circuit design, layout, and simulation
title_full	CMOS circuit design, layout, and simulation R. Jacob Baker, Harry W. Li and David E. Boyce
title_fullStr	CMOS circuit design, layout, and simulation R. Jacob Baker, Harry W. Li and David E. Boyce
title_full_unstemmed	CMOS circuit design, layout, and simulation R. Jacob Baker, Harry W. Li and David E. Boyce
title_short	CMOS
title_sort	cmos circuit design layout and simulation
title_sub	circuit design, layout, and simulation
topic	CIRCUITOS INTEGRADOS larpcal Circuitos integrados - Disen̋o y construcción Semiconductores de metal-oxido complementarios - Disen̋o y construcción Transistores de efecto de campo metal-oxido semiconductores Integrated circuit layout Integrated circuits Design and construction Metal oxide semiconductor field-effect transistors Metal oxide semiconductors, Complementary Design and construction Entwurf (DE-588)4121208-3 gnd Integrierte Schaltung (DE-588)4027242-4 gnd CMOS-Schaltung (DE-588)4148111-2 gnd Simulation (DE-588)4055072-2 gnd MOS-FET (DE-588)4207266-9 gnd CMOS (DE-588)4010319-5 gnd Schaltungsentwurf (DE-588)4179389-4 gnd
topic_facet	CIRCUITOS INTEGRADOS Circuitos integrados - Disen̋o y construcción Semiconductores de metal-oxido complementarios - Disen̋o y construcción Transistores de efecto de campo metal-oxido semiconductores Integrated circuit layout Integrated circuits Design and construction Metal oxide semiconductor field-effect transistors Metal oxide semiconductors, Complementary Design and construction Entwurf Integrierte Schaltung CMOS-Schaltung Simulation MOS-FET CMOS Schaltungsentwurf
work_keys_str_mv	AT bakerrusseljacob cmoscircuitdesignlayoutandsimulation AT liharryw cmoscircuitdesignlayoutandsimulation AT boycedavide cmoscircuitdesignlayoutandsimulation

Verfügbarkeit

MARC

Datensatz im Suchindex

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