Verfügbarkeit: Fundamentals of semiconductors | Technische Universität München

Fundamentals of semiconductors: physics and materials properties ; with 250 two-color figures, 52 tables and 116 problems

Gespeichert in:

Bibliographische Detailangaben
Beteiligte Personen:	Yu, Peter Y. (VerfasserIn), Cardona, Manuel 1934-2014 (VerfasserIn)
Format:	Buch
Sprache:	Englisch
Veröffentlicht:	Berlin [u.a.] Springer 2003
Ausgabe:	3., rev. and enl. ed., 2., corr. print.
Schriftenreihe:	Physics and astronomy online library Advanced texts in physics
Schlagwörter:	Semiconductors Semiconductors - Materials Halbleiterphysik Halbleiter Stoffeigenschaft Lehrbuch
Links:	http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010357266&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
Umfang:	XVIII, 639 S. Ill., graph. Darst.
ISBN:	3540413235

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MARC


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Datensatz im Suchindex

_version_	1819250822371868672
adam_text	CONTENTS 1. INTRODUCTION 1.1 A SURVEY OF SEMICONDUCTORS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1.1.1 ELEMENTAL SEMICONDUCTORS . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1.1.2 BINARY COMPOUNDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1.1.3 OXIDES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1.4 LAYERED SEMICONDUCTORS . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1.5 ORGANIC SEMICONDUCTORS . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1.1.6 MAGNETIC SEMICONDUCTORS . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1.1.7 OTHER MISCELLANEOUS SEMICONDUCTORS . . . . . . . . . . . . . . . . . 4 1.2 GROWTH TECHNIQUES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1.2.1 CZOCHRALSKI METHOD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1.2.2 BRIDGMAN METHOD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1.2.3 CHEMICAL VAPOR DEPOSITION . . . . . . . . . . . . . . . . . . . . . . . . . 7 1.2.4 MOLECULAR BEAM EPITAXY . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 1.2.5 FABRICATION OF SELF-ORGANIZED QUANTUM DOTS BY THE STRANSKIKRASTANOW GROWTH METHOD . . . . . . . . . . . 11 1.2.6 LIQUID PHASE EPITAXY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 PERIODIC TABLE OF SEMICONDUCTOR-FORMING* ELEMENTS . . . . . . . . . . . . . . 15 2. ELECTRONIC BAND STRUCTURES 2.1 QUANTUM MECHANICS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2.2 TRANSLATIONAL SYMMETRY AND BRILLOUIN ZONES . . . . . . . . . . . . . . . . . 20 2.3 A PEDESTRIANS GUIDE TO GROUP THEORY . . . . . . . . . . . . . . . . . . . . . 25 2.3.1 DEFINITIONS AND NOTATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . 25 2.3.2 SYMMETRY OPERATIONS OF THE DIAMOND AND ZINC-BLENDE STRUCTURES . . . . . . . . . . . . . . . . . . . . . . . . 30 2.3.3 REPRESENTATIONS AND CHARACTER TABLES . . . . . . . . . . . . . . . 32 2.3.4 SOME APPLICATIONS OF CHARACTER TABLES . . . . . . . . . . . . . . . 40 2.4 EMPTY LATTICE OR NEARLY FREE ELECTRON ENERGY BANDS . . . . . . . . . 48 2.4.1 NEARLY FREE ELECTRON BAND STRUCTURE IN A ZINC-BLENDE CRYSTAL . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 2.4.2 NEARLY FREE ELECTRON ENERGY BANDS IN DIAMOND CRYSTALS 52 2.5 BAND STRUCTURE CALCULATIONS BY PSEUDOPOTENTIAL METHODS . . . . . . 58 2.5.1 PSEUDOPOTENTIAL FORM FACTORS IN ZINC-BLENDE- AND DIAMOND-TYPE SEMICONDUCTORS . . . . 61 2.5.2 EMPIRICAL AND SELF-CONSISTENT PSEUDOPOTENTIAL METHODS 66 2.6 THE K P METHOD OF BAND-STRUCTURE CALCULATIONS . . . . . . . . . . . . . . 68 2.6.1 EFFECTIVE MASS OF A NONDEGENERATE BAND USING THE K * P METHOD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 2.6.2 BAND DISPERSION NEAR A DEGENERATE EXTREMUM: TOP VALENCE BANDS IN DIAMOND- AND ZINC-BLENDE-TYPE SEMICONDUCTORS . . . . . . . . . . . . . . . 71 2.7 TIGHT-BINDING OR LCAO APPROACH TO THE BAND STRUCTURE OF SEMICONDUCTORS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83 2.7.1 MOLECULAR ORBITALS AND OVERLAP PARAMETERS . . . . . . . . . . . 83 2.7.2 BAND STRUCTURE OF GROUP-IV ELEMENTS BY THE TIGHT-BINDING METHOD . . . . . . . . . . . . . . . . . . . . . . . 87 2.7.3 OVERLAP PARAMETERS AND NEAREST-NEIGHBOR DISTANCES . . . 94 PROBLEMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96 SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 3. VIBRATIONAL PROPERTIES OF SEMICONDUCTORS, AND ELECTRONPHONON INTERACTIONS 3.1 PHONON DISPERSION CURVES OF SEMICONDUCTORS . . . . . . . . . . . . . . . 110 3.2 MODELS FOR CALCULATING PHONON DISPERSION CURVES OF SEMICONDUCTORS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114 3.2.1 FORCE CONSTANT MODELS . . . . . . . . . . . . . . . . . . . . . . . . . . . 114 3.2.2 SHELL MODEL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114 3.2.3 BOND MODELS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115 3.2.4 BOND CHARGE MODELS . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117 3.3 ELECTRONPHONON INTERACTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121 3.3.1 STRAIN TENSOR AND DEFORMATION POTENTIALS . . . . . . . . . . . . 122 3.3.2 ELECTRONACOUSTIC-PHONON INTERACTION AT DEGENERATE BANDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127 3.3.3 PIEZOELECTRIC ELECTRONACOUSTIC-PHONON INTERACTION . . . . 130 3.3.4 ELECTRONOPTICAL-PHONON DEFORMATION POTENTIAL INTERACTIONS . . . . . . . . . . . . . . . . . 131 3.3.5 FROEHLICH INTERACTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133 3.3.6 INTERACTION BETWEEN ELECTRONS AND LARGE-WAVEVECTOR PHONONS: INTERVALLEY ELECTRONPHONON INTERACTION . . . . 135 PROBLEMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137 SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158 4. ELECTRONIC PROPERTIES OF DEFECTS 4.1 CLASSIFICATION OF DEFECTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160 4.2 SHALLOW OR HYDROGENIC IMPURITIES . . . . . . . . . . . . . . . . . . . . . . . . . 161 4.2.1 EFFECTIVE MASS APPROXIMATION . . . . . . . . . . . . . . . . . . . . . 162 4.2.2 HYDROGENIC OR SHALLOW DONORS . . . . . . . . . . . . . . . . . . . . 166 4.2.3 DONORS ASSOCIATED WITH ANISOTROPIC CONDUCTION BANDS 171 4.2.4 ACCEPTOR LEVELS IN DIAMOND- AND ZINC-BLENDE-TYPE SEMICONDUCTORS . . . . . . . . . . . . . . 174 XIV CONTENTS 4.3 DEEP CENTERS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 4.3.1 GREENS FUNCTION METHOD FOR CALCULATING DEFECT ENERGY LEVELS . . . . . . . . . . . . . . . 183 4.3.2 AN APPLICATION OF THE GREENS FUNCTION METHOD: LINEAR COMBINATION OF ATOMIC ORBITALS . . . . . . . . . . . . . 188 4.3.3 ANOTHER APPLICATION OF THE GREENS FUNCTION METHOD: NITROGEN IN GAP AND GAASP ALLOYS . . . . . . . . . . . . . . . . 192 4.3.4 FINAL NOTE ON DEEP CENTERS . . . . . . . . . . . . . . . . . . . . . . . 197 PROBLEMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198 SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202 5. ELECTRICAL TRANSPORT 5.1 QUASI-CLASSICAL APPROACH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 203 5.2 CARRIER MOBILITY FOR A NONDEGENERATE ELECTRON GAS . . . . . . . . . . 206 5.2.1 RELAXATION TIME APPROXIMATION . . . . . . . . . . . . . . . . . . . 206 5.2.2 NONDEGENERATE ELECTRON GAS IN A PARABOLIC BAND . . . . . 207 5.2.3 DEPENDENCE OF SCATTERING AND RELAXATION TIMES ON ELECTRON ENERGY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 208 5.2.4 MOMENTUM RELAXATION TIMES . . . . . . . . . . . . . . . . . . . . . 209 5.2.5 TEMPERATURE DEPENDENCE OF MOBILITIES . . . . . . . . . . . . . 220 5.3 MODULATION DOPING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 223 5.4 HIGH-FIELD TRANSPORT AND HOT CARRIER EFFECTS . . . . . . . . . . . . . . . 225 5.4.1 VELOCITY SATURATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 227 5.4.2 NEGATIVE DIFFERENTIAL RESISTANCE . . . . . . . . . . . . . . . . . . . 228 5.4.3 GUNN EFFECT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230 5.5 MAGNETO-TRANSPORT AND THE HALL EFFECT . . . . . . . . . . . . . . . . . . . . 232 5.5.1 MAGNETO-CONDUCTIVITY TENSOR . . . . . . . . . . . . . . . . . . . . . 232 5.5.2 HALL EFFECT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 234 5.5.3 HALL COEFFICIENT FOR THIN FILM SAMPLES (VAN DER PAUW METHOD) . . . . . . . . . . . . . . . . . . . . . . . . . . 235 5.5.4 HALL EFFECT FOR A DISTRIBUTION OF ELECTRON ENERGIES . . . . 236 PROBLEMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 237 SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 241 6. OPTICAL PROPERTIES I 6.1 MACROSCOPIC ELECTRODYNAMICS . . . . . . . . . . . . . . . . . . . . . . . . . . . . 244 6.1.1 DIGRESSION: UNITS FOR THE FREQUENCY OF ELECTROMAGNETIC WAVES . . . . . . . . . . . . . . . . . . . . . . . . 247 6.1.2 EXPERIMENTAL DETERMINATION OF OPTICAL FUNCTIONS . . . . 247 6.1.3 KRAMERSKRONIG RELATIONS . . . . . . . . . . . . . . . . . . . . . . . . 250 6.2 THE DIELECTRIC FUNCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 253 6.2.1 EXPERIMENTAL RESULTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . 253 6.2.2 MICROSCOPIC THEORY OF THE DIELECTRIC FUNCTION . . . . . . . . 254 6.2.3 JOINT DENSITY OF STATES AND VAN HOVE SINGULARITIES . . . . 261 6.2.4 VAN HOVE SINGULARITIES IN A I . . . . . . . . . . . . . . . . . . . . . . . 262 CONTENTS XV 6.2.5 DIRECT ABSORPTION EDGES . . . . . . . . . . . . . . . . . . . . . . . . . 268 6.2.6 INDIRECT ABSORPTION EDGES . . . . . . . . . . . . . . . . . . . . . . . . 269 6.2.7 FORBIDDEN DIRECT ABSORPTION EDGES . . . . . . . . . . . . . . 273 6.3 EXCITONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 276 6.3.1 EXCITON EFFECT AT M 0 CRITICAL POINTS . . . . . . . . . . . . . . . . . 279 6.3.2 ABSORPTION SPECTRA OF EXCITONS . . . . . . . . . . . . . . . . . . . . 282 6.3.3 EXCITON EFFECT AT M 1 CRITICAL POINTS OR HYPERBOLIC EXCITONS . . . . . . . . . . . . . . . . . . . . . . . . . . . 288 6.3.4 EXCITON EFFECT AT M 3 CRITICAL POINTS . . . . . . . . . . . . . . . . . 291 6.4 PHONON-POLARITONS AND LATTICE ABSORPTION . . . . . . . . . . . . . . . . . . 292 6.4.1 PHONON-POLARITONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 295 6.4.2 LATTICE ABSORPTION AND REFLECTION . . . . . . . . . . . . . . . . . . 298 6.4.3 MULTIPHONON LATTICE ABSORPTION . . . . . . . . . . . . . . . . . . . 299 6.4.4 DYNAMIC EFFECTIVE IONIC CHARGES IN HETEROPOLAR SEMICONDUCTORS . . . . . . . . . . . . . . . . . . . . 303 6.5 ABSORPTION ASSOCIATED WITH EXTRINSIC ELECTRONS . . . . . . . . . . . . . 305 6.5.1 FREE-CARRIER ABSORPTION IN DOPED SEMICONDUCTORS . . . . 306 6.5.2 ABSORPTION BY CARRIERS BOUND TO SHALLOW DONORS AND ACCEPTORS . . . . . . . . . . . . . . . . . . 311 6.6 MODULATION SPECTROSCOPY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 315 6.6.1 FREQUENCY MODULATED REFLECTANCE AND THERMOREFLECTANCE . . . . . . . . . . . . . . . . . . . . . . . . . . . 319 6.6.2 PIEZOREFLECTANCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 321 6.6.3 ELECTROREFLECTANCE (FRANZKELDYSH EFFECT) . . . . . . . . . . . 322 6.6.4 PHOTOREFLECTANCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 329 6.6.5 REFLECTANCE DIFFERENCE SPECTROSCOPY . . . . . . . . . . . . . . . 332 6.7 ADDENDUM (THIRD EDITION): DIELECTRIC FUNCTION . . . . . . . . . . . . . 333 PROBLEMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 334 SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 343 7. OPTICAL PROPERTIES II 7.1 EMISSION SPECTROSCOPIES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 345 7.1.1 BAND-TO-BAND TRANSITIONS . . . . . . . . . . . . . . . . . . . . . . . . . 351 7.1.2 FREE-TO-BOUND TRANSITIONS . . . . . . . . . . . . . . . . . . . . . . . . 354 7.1.3 DONORACCEPTOR PAIR TRANSITIONS . . . . . . . . . . . . . . . . . . 356 7.1.4 EXCITONS AND BOUND EXCITONS . . . . . . . . . . . . . . . . . . . . . 362 7.1.5 LUMINESCENCE EXCITATION SPECTROSCOPY . . . . . . . . . . . . . . 369 7.2 LIGHT SCATTERING SPECTROSCOPIES . . . . . . . . . . . . . . . . . . . . . . . . . . . 375 7.2.1 MACROSCOPIC THEORY OF INELASTIC LIGHT SCATTERING BY PHONONS . . . . . . . . . . . . . 375 7.2.2 RAMAN TENSOR AND SELECTION RULES . . . . . . . . . . . . . . . . . 378 7.2.3 EXPERIMENTAL DETERMINATION OF RAMAN SPECTRA . . . . . . 385 7.2.4 MICROSCOPIC THEORY OF RAMAN SCATTERING . . . . . . . . . . . . 394 7.2.5 A DETOUR INTO THE WORLD OF FEYNMAN DIAGRAMS . . . . . . 395 7.2.6 BRILLOUIN SCATTERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 398 7.2.7 EXPERIMENTAL DETERMINATION OF BRILLOUIN SPECTRA . . . . . 400 XVI CONTENTS 7.2.8 RESONANT RAMAN AND BRILLOUIN SCATTERING . . . . . . . . . . . 401 PROBLEMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 422 SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 426 8. PHOTOELECTRON SPECTROSCOPY 8.1 PHOTOEMISSION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 431 8.1.1 ANGLE-INTEGRATED PHOTOELECTRON SPECTRA OF THE VALENCE BANDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 440 8.1.2 ANGLE-RESOLVED PHOTOELECTRON SPECTRA OF THE VALENCE BANDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 443 8.1.3 CORE LEVELS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 451 8.2 INVERSE PHOTOEMISSION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 456 8.3 SURFACE EFFECTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 457 8.3.1 SURFACE STATES AND SURFACE RECONSTRUCTION . . . . . . . . . . . 457 8.3.2 SURFACE ENERGY BANDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . 458 8.3.3 FERMI LEVEL PINNING AND SPACE CHARGE LAYERS . . . . . . . 460 PROBLEMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 465 SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 468 9. EFFECT OF QUANTUM CONFINEMENT ON ELECTRONS AND PHONONS IN SEMICONDUCTORS 9.1 QUANTUM CONFINEMENT AND DENSITY OF STATES . . . . . . . . . . . . . . . 470 9.2 QUANTUM CONFINEMENT OF ELECTRONS AND HOLES . . . . . . . . . . . . . . 473 9.2.1 SEMICONDUCTOR MATERIALS FOR QUANTUM WELLS AND SUPERLATTICES . . . . . . . . . . . . . . . 474 9.2.2 CLASSIFICATION OF MULTIPLE QUANTUM WELLS AND SUPERLATTICES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 478 9.2.3 CONFINEMENT OF ENERGY LEVELS OF ELECTRONS AND HOLES . 479 9.2.4 SOME EXPERIMENTAL RESULTS . . . . . . . . . . . . . . . . . . . . . . . 489 9.3 PHONONS IN SUPERLATTICES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 494 9.3.1 PHONONS IN SUPERLATTICES: FOLDED ACOUSTIC AND CONFINED OPTIC MODES . . . . . . . . . . 494 9.3.2 FOLDED ACOUSTIC MODES: MACROSCOPIC TREATMENT . . . . . . 499 9.3.3 CONFINED OPTICAL MODES: MACROSCOPIC TREATMENT . . . . . 500 9.3.4 ELECTROSTATIC EFFECTS IN POLAR CRYSTALS: INTERFACE MODES . . . . . . . . . . . . . . . . . . 502 9.4 RAMAN SPECTRA OF PHONONS IN SEMICONDUCTOR SUPERLATTICES . . . . 511 9.4.1 RAMAN SCATTERING BY FOLDED ACOUSTIC PHONONS . . . . . . . 511 9.4.2 RAMAN SCATTERING BY CONFINED OPTICAL PHONONS . . . . . . 516 9.4.3 RAMAN SCATTERING BY INTERFACE MODES . . . . . . . . . . . . . . 518 9.4.4 MACROSCOPIC MODELS OF ELECTRONLO PHONON (FROEHLICH) INTERACTION IN MULTIPLE QUANTUM WELLS . . . . . 521 9.5 ELECTRICAL TRANSPORT: RESONANT TUNNELING . . . . . . . . . . . . . . . . . . . . . . . . 525 9.5.1 RESONANT TUNNELING THROUGH A DOUBLE-BARRIER QUANTUM WELL . . . . . . . . . . . 526 CONTENTS XVII 9.5.2 IV CHARACTERISTICS OF RESONANT TUNNELING DEVICES . . . . 529 9.6 QUANTUM HALL EFFECTS IN TWO-DIMENSIONAL ELECTRON GASES . . . . 533 9.6.1 LANDAU THEORY OF DIAMAGNETISM IN A THREE-DIMENSIONAL FREE ELECTRON GAS . . . . . . . . . . . 534 9.6.2 MAGNETO-CONDUCTIVITY OF A TWO-DIMENSIONAL ELECTRON GAS: FILLING FACTOR . . . . 537 9.6.3 THE EXPERIMENT OF VON KLITZING, PEPPER AND DORDA . . . 538 9.6.4 EXPLANATION OF THE HALL PLATEAUS IN THE INTEGRAL QUANTUM HALL EFFECT . . . . . . . . . . . . . . . . 541 9.7 CONCLUDING REMARKS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 545 PROBLEMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 546 SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 551 APPENDIX: PIONEERS OF SEMICONDUCTOR PHYSICS REMEMBER* ULTRA-PURE GERMANIUM: FROM APPLIED TO BASIC RESEARCH OR AN OLD SEMICONDUCTOR OFFERING NEW OPPORTUNITIES BY EUGENE E. HALLER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 TWO PSEUDOPOTENTIAL METHODS: EMPIRICAL AND AB INITIO BY MARVIN L. COHEN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 558 THE EARLY STAGES OF BAND-STRUCTURES PHYSICS AND ITS STRUGGLES FOR A PLACE IN THE SUN BY CONYERS HERRING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 560 CYCLOTRON RESONANCE AND STRUCTURE OF CONDUCTION AND VALENCE BAND EDGES IN SILICON AND GERMANIUM BY CHARLES KITTEL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 563 OPTICAL PROPERTIES OF AMORPHOUS SEMICONDUCTORS AND SOLAR CELLS BY JAN TAUC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 566 OPTICAL SPECTROSCOPY OF SHALLOW IMPURITY CENTERS BY ELIAS BURSTEIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 569 ON THE PREHISTORY OF ANGULAR RESOLVED PHOTOEMISSION BY NEVILLE V. SMITH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 574 THE DISCOVERY AND VERY BASICS OF THE QUANTUM HALL EFFECT BY KLAUS VON KLITZING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 576 THE BIRTH OF THE SEMICONDUCTOR SUPERLATTICE BY LEO ESAKI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 578 REFERENCES 583 SUBJECT INDEX 619 PHYSICAL PARAMETERS OF TETRAHEDRAL SEMICONDUCTORS (INSIDE FRONT COVER) TABLE OF FUNDAMENTAL PHYSICAL CONSTANTS (INSIDE BACK COVER) TABLE OF UNITS (INSIDE BACK COVER) XVIII CONTENTS
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spellingShingle	Yu, Peter Y. Cardona, Manuel 1934-2014 Fundamentals of semiconductors physics and materials properties ; with 250 two-color figures, 52 tables and 116 problems Semiconductors Semiconductors - Materials Halbleiterphysik (DE-588)4113829-6 gnd Halbleiter (DE-588)4022993-2 gnd Stoffeigenschaft (DE-588)4192147-1 gnd
subject_GND	(DE-588)4113829-6 (DE-588)4022993-2 (DE-588)4192147-1 (DE-588)4123623-3
title	Fundamentals of semiconductors physics and materials properties ; with 250 two-color figures, 52 tables and 116 problems
title_auth	Fundamentals of semiconductors physics and materials properties ; with 250 two-color figures, 52 tables and 116 problems
title_exact_search	Fundamentals of semiconductors physics and materials properties ; with 250 two-color figures, 52 tables and 116 problems
title_full	Fundamentals of semiconductors physics and materials properties ; with 250 two-color figures, 52 tables and 116 problems Peter Y. Yu ; Manuel Cardona
title_fullStr	Fundamentals of semiconductors physics and materials properties ; with 250 two-color figures, 52 tables and 116 problems Peter Y. Yu ; Manuel Cardona
title_full_unstemmed	Fundamentals of semiconductors physics and materials properties ; with 250 two-color figures, 52 tables and 116 problems Peter Y. Yu ; Manuel Cardona
title_short	Fundamentals of semiconductors
title_sort	fundamentals of semiconductors physics and materials properties with 250 two color figures 52 tables and 116 problems
title_sub	physics and materials properties ; with 250 two-color figures, 52 tables and 116 problems
topic	Semiconductors Semiconductors - Materials Halbleiterphysik (DE-588)4113829-6 gnd Halbleiter (DE-588)4022993-2 gnd Stoffeigenschaft (DE-588)4192147-1 gnd
topic_facet	Semiconductors Semiconductors - Materials Halbleiterphysik Halbleiter Stoffeigenschaft Lehrbuch
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