Current and future silicon based thin-film structures for electronic applications: epitaxy and crystalline deposition on amorphous substrates
Gespeichert in:
| Beteilige Person: | |
|---|---|
| Format: | Buch |
| Sprache: | Englisch Deutsch |
| Veröffentlicht: |
2002
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| Schlagwörter: | |
| Links: | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010179114&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| Beschreibung: | Erlangen-Nürnberg, Univ., Habil.-Schr., 2002. - Enth. Zsfassung in engl. und dt. Sprache |
| Umfang: | 307 S. Ill., graph. Darst. |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV016464770 | ||
| 003 | DE-604 | ||
| 005 | 20040723 | ||
| 007 | t| | ||
| 008 | 030124s2002 xx ad|| m||| 00||| eng d | ||
| 016 | 7 | |a 966020626 |2 DE-101 | |
| 035 | |a (OCoLC)216911671 | ||
| 035 | |a (DE-599)BVBBV016464770 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | 0 | |a eng |a ger | |
| 049 | |a DE-29 |a DE-29T |a DE-12 | ||
| 084 | |a UP 7570 |0 (DE-625)146436: |2 rvk | ||
| 084 | |a ZN 3460 |0 (DE-625)157317: |2 rvk | ||
| 100 | 1 | |a Christiansen, Silke H. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Current and future silicon based thin-film structures for electronic applications |b epitaxy and crystalline deposition on amorphous substrates |c von Silke H. Christiansen |
| 264 | 1 | |c 2002 | |
| 300 | |a 307 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a Erlangen-Nürnberg, Univ., Habil.-Schr., 2002. - Enth. Zsfassung in engl. und dt. Sprache | ||
| 650 | 0 | 7 | |a Amorpher Zustand |0 (DE-588)4306087-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Germanium |0 (DE-588)4135644-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Epitaxieschicht |0 (DE-588)4152546-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Heterostruktur |0 (DE-588)4123378-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Kristallisation |0 (DE-588)4033215-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Laserinduziertes Verfahren |0 (DE-588)4476754-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Gitterbaufehler |0 (DE-588)4125030-8 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 0 | 1 | |a Germanium |0 (DE-588)4135644-5 |D s |
| 689 | 0 | 2 | |a Heterostruktur |0 (DE-588)4123378-5 |D s |
| 689 | 0 | 3 | |a Epitaxieschicht |0 (DE-588)4152546-2 |D s |
| 689 | 0 | 4 | |a Gitterbaufehler |0 (DE-588)4125030-8 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 1 | 1 | |a Amorpher Zustand |0 (DE-588)4306087-0 |D s |
| 689 | 1 | 2 | |a Kristallisation |0 (DE-588)4033215-9 |D s |
| 689 | 1 | 3 | |a Laserinduziertes Verfahren |0 (DE-588)4476754-7 |D s |
| 689 | 1 | |5 DE-604 | |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010179114&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-010179114 | |
Datensatz im Suchindex
| _version_ | 1820954250946019328 |
|---|---|
| adam_text |
CONTENTS
1 SUMMARY 7
2 INTRODUCTION, MOTIVATION, OUTLINE 11
2.1 TRENDS IN SI-BASED MATERIALS DEVELOPMENT. 11
2.1.1 MICRO-ELECTRONICS. 12
2.1.2 OPTO-ELECTRONICS. 14
2.1.3 LARGE AREA ELECTRONICS. 18
2.2 STRATEGIC APPROACH TO MATERIALS OPTIMIZATION. 22
2.2.1 CHARACTERIZATION METHODOLOGY. 23
2.2.2 SELECTED EXAMPLES OF MATERIALS OPTIMIZATION BASED ON EXPERIMENTS
RELATED TO NUMERICAL SIMULATIONS FROM THE ELECTRONIC MATERIALS FIELD .
27
3 SIGE/SI HETEROSTRUCTURES: MATERIALS UNDERSTANDING BASED ON EXPERIMENT
AND SIMULATION 31
3.1 STRAIN RELAXATION PHENOMENA. 32
3.2 SELF-ASSEMBLY: ENERGETICS AND KINETICS. 40
3.2.1 PRESENT STATE OF OBSERVATIONS: RIPPLES AND ISLANDS. 40
3.2.2 PRESENT STATE OF MODELING: THERMODYNAMIC EQUILIBRIUM VS. INSTA
BILITY THEORIES. 49
3.2.3 RIPPLE FORMATION- AN INSTABILITY PHENOMENON. 50
3.2.4 ISLAND FORMATION - A NUCLEATION PHENOMENON. 51
3.2.5 NUCLEATION KINETICS OF ISLANDS . 52
3.3 ENERGETIC PATHWAY OF SELF-ASSEMBLY FROM SOLUTION GROWTH EXPERIMENTS
. 61
3.3.1 REVERSIBILITY AND STABILITY OF GROWTH STAGES: DISSOLUTION
EXPERIMENTS 62
3.3.2 REVERSIBILITY AND STABILITY OF GROWTH STAGES: EQUILIBRATION
EXPERIMENTS 63
3.3.3 REVERSIBILITY AND STABILITY OF GROWTH STAGES: ANNEALING
EXPERIMENTS . 64
3.4 PLASTIC RELAXATION IN SIGE/SI HETEROSTRUCTURES . 79
3.4.1 CONTROL OVER DISLOCATION FORMATION, MULTIPLICATION, INTERACTION
AND
ANNIHILATION IN HIGH DRIVING FORCE EXPERIMENTS. 81
3.4.2 CONTROL OF DISLOCATION PATTERNS IN LOW DRIVING FORCE GROWTH
EXPERIMENTS 95
3.4.3 APPROACHES TO REDUCE THREADING DISLOCATION DENSITIES .104
3.5 SIGE/SI - MULTI-LAYER STRUCTURES WITH DESIRED PROPERTIES.107
3.5.1 THE CONCEPT OF SPATIALLY INDIRECT RECOMBINATION.109
3.5.2 STRAIN DISTRIBUTION AND ELECTRONIC PROPERTIES IN MULTI-LAYER
STRUCTURESLL2
3
BIBLIOGRAFISCHE INFORMATIONEN
HTTP://D-NB.INFO/966020626
CONTENTS
3.5.3 FINITE ELEMENT CALCULATIONS OF STRAIN DISTRIBUTION IN MULTI-LAYER
STRUC
TURES .113
3.5.4 INTERMIXING IN STACKED ISLAND MULTILAYERS: FINITE ELEMENT
CALCULATIONS
AND QUANTITATIVE HIGH RESOLUTION ELECTRON MICROSCOPY .120
3.5.5 LAYER CAPPING WITH LIQUID PHASE EPITAXY.121
3.5.6 SUMMARY AND DISCUSSION.122
APPROACHES TO REALIZE POLY-CRYSTALLINE SI LAYERS ON GLASS SUBSTRATES 137
4.1 DIRECT LOW TEMPERATURE DEPOSITION.138
4.2 WAFER BONDING, SILICON-ON-INSULATOR AND LAYER TRANSFER
TECHNIQUES.140
4.3 CRYSTALLIZATION OF AMORPHOUS SI.141
LASER-CRYSTALLIZATION OF THIN AMORPHOUS SI LAYERS ON GLASS SUBSTRATES:
MATERIALS UNDERSTANDING BASED ON EXPERIMENT AND SIMULATION 143
5.1 PRINCIPLES OF LASER CRYSTALLIZATION.143
5.1.1 PHASE TRANSITIONS IN THE SI-SYSTEM.143
5.1.2 LASER INDUCED MELTING PROCESS.146
5.1.3 THERMODYNAMIC AND KINETIC ASPECTS OF CRYSTALLIZATION.148
5.1.4 SINGLE PULSE IRRADIATION.160
5.1.5 INFLUENCE OF THE COOLING RATE ON THE MICRO-STRUCTURE.163
5.1.6 THE SAMPLES AND THE LASER SETUP.165
5.2 LATERAL EPITAXIAL SOLIDIFICATION.167
5.2.1 SHORT PULSE SCANNING LASER PROCESSING.168
5.2.2 CONTINUOUS WAVE SCANNING LASER PROCESSING.169
5.2.3 SELECTIVE AREA PROCESSING WITH CONTINUOUS WAVE LASERS.170
5.2.4 MULTIPLE PULSE LASER PROCESSING.171
5.3 MICRO-STRUCTURAL SPECIFICS OF LASER CRYSTALLIZED SI.174
5.3.1 DEFECT POPULATION AND DEFECT STRUCTURE.174
5.3.2 TEXTURE FORMATION.179
5.3.3 INTERPRETATION OF TEXTURE FORMATION AND DISCUSSION.187
5.4 TEXTURED POLY-CRYSTALLINE SI FILMS AS EPITAXIAL SUBSTRATES FOR
PHOTOVOLTAIC
APPLICATIONS.194
5.4.1 LAYER GROWTH BY ELECTRON CYCLOTRON RESONANCE PLASMA ENHANCED CHEM
ICAL VAPOR DEPOSITION.195
5.4.2 LAYER GROWTH WITH EXCIMER LASERS.198
5.5 ELECTRICAL PROPERTIES RELATED TO EXTENDED DEFECTS.199
5.5.1 ELECTRON BEAM INDUCED CURRENT.200
5.5.2 SPREADING RESISTANCE .201
5.6 2D NUMERICAL SIMULATIONS OF THE LASER CRYSTALLIZATION PROCESS.201
5.6.1 DATA BASE APPLICATION. 203
5.6.2 ENTHALPY CONTENT AFTER LASER IRRADIATION.205
5.6.3 VOLUME FRACTIONS OF LARGE GRAINED AND FINE GRAINED POLY-SI .206
5.6.4 COOLING RATES.211
5.6.5 TEMPERATURE PROFILES AND CRYSTALLITE SIZES.213
5.6.6 DISCUSSION.215
CONTENTS
5
A EPITAXIAL GROWTH 219
A.L ENERGETICS OF GROWTH.219
A.1.1 BAUER CRITERION.219
A.1.2 EXTENDED BAUER CRITERION.220
A.2 STRAIN RELAXATION PHENOMENA.221
A.2.1 LATTICE-MISFITTED GROWTH AND STRAIN.221
A.2.2 ELASTIC STRAIN RELAXATION: RIPPLING AND ISLANDING.221
A.2.3 PLASTIC STRAIN RELAXATION: DISLOCATIONS.221
B THE SOLUTION GROWTH OF GE(SI) ON SI(001) USING LIQUID PHASE EPITAXY
225
C LASER CRYSTALLIZATION PROCESSES 227
C.L PULSED LASER PROCESSES.227
C. 2 CONTINUOUS WAVE LASER PROCESSES.229
D NUCLEATION PROCESSES 231
D. L SOLIDIFICATION PROCESSES.231
D.2 ATOM TRANSFER AT THE SOLID/LIQUID INTERFACE.232
D.2.1 CONDITIONS FOR NUCLEATION.232
D. 2.2 NUCLEATION RATES.234
D.3 RAPID SOLIDIFICATION PROCESSES .235
D. 4 NUCLEATION PROCESSES IN HETERO- EPITAXIAL GROWTH.235
E STRUCTURAL CHARACTERIZATION 237
E. L TRANSMISSION ELECTRON MICROSCOPY TECHNIQUES .237
E. 1.1 ELECTRON DIFFRACTION.238
E.L.2 HIGH RESOLUTION IMAGING.241
E.L.3 SAMPLE PREPARATION.242
E.L.4 MICROSCOPE EQUIPMENT USED.243
E.2 SCANNING ELECTRON MICROSCOPY TECHNIQUES.244
E.2.1 SECONDARY ELECTRON IMAGING.244
E. 2.2 ELECTRON BACK-SCATTERING DIFFRACTION ANALYSIS.244
E. 3 X- RAY TOPOGRAPHY ANALYSIS.245
F CLASSIFICATION OF GRAIN BOUNDARIES 249
F. L SMALL ANGLE GRAIN BOUNDARIES.249
F. 2 LARGE ANGLE GRAIN BOUNDARIES.249
F. 2.1 COINCIDENCE GRAIN BOUNDARIES.250
F.2.2 DETERMINATION OF THE ROTATION MATRIX.250
F.2.3 DETERMINATION OF THE COINCIDENCE-SITE-LATTICE- PARAMETER E.251
F. 2.4 RANDOM GRAIN BOUNDARIES.251
G COMPOSITION ANALYSIS 253
G. L MICRO-RAMAN SPECTROSCOPY.253
G. 1.1 THEORETICAL BACKGROUND.253
G.L.2 EFFECT OF STRAIN ON THE RAMAN MODES OF SI AND GESI.254
6
CONTENTS
G.1.3 PECULARITIES OF RAMAN SPECTROSCOPY IN SIGE ALLOYS.256
G.1.4 STRAIN SHIFT OF PHONONS IN SIGE .256
G.1.5 EXPERIMENTAL SETUP.257
G.2 DIGITAL ANALYSIS OF LATTICE IMAGES.258
G. 3 ENERGY DISPERSIVE ANALYSIS.260
H TOPOLOGICAL FEATURES 263
H. L ATOMIC FORCE MICROSCOPY.263
H. 2 OPTICAL MICROSCOPY.264
I ELECTRICAL PROPERTIES OF DEFECTS 265
I. 1 ELECTRON BEAM INDUCED CURRENT.265
I. 2 CARRIER LIFETIME MEASUREMENTS.266
J ORDERING PHENOMENA EXPERIMENTALLY ANALYZED 267
J. L ATOMIC FORCE MICROSCOPY.267
J.2 LIGHT DIFFRACTION IN BACK-REFLECTION GEOMETRY.267
J. 3 GRACING INCIDENCE SMALL ANGLE X-RAY SCATTERING .268
K NUMERICAL SIMULATIONS 271
K. L THE FINITE ELEMENT METHOD. 271
K.1.1 FINITE ELEMENT CALCULATIONS OF NANOSTRUCTURES.272
K.L.2 STEPS TO A FINITE ELEMENT MODEL .274
K.2 THE FINITE DIFFERENCE METHOD. 274
K.2.1 ONE DIMENSIONAL SIMULATION OF THE HOMOGENEOUS LASER
CRYSTALLIZATION
PROCESS. 275
K.2.2 TWO DIMENSIONAL SIMULATION OF THE LASER CRYSTALLIZATION PROCESS .
. . 276
K.2.3 STATE DIAGRAMS AND ARRAYS.278
K.2.4 DATA BASE STRUCTURE TO SYSTEMATIZE SIMULATIONS.279 |
| any_adam_object | 1 |
| author | Christiansen, Silke H. |
| author_facet | Christiansen, Silke H. |
| author_role | aut |
| author_sort | Christiansen, Silke H. |
| author_variant | s h c sh shc |
| building | Verbundindex |
| bvnumber | BV016464770 |
| classification_rvk | UP 7570 ZN 3460 |
| ctrlnum | (OCoLC)216911671 (DE-599)BVBBV016464770 |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>00000nam a2200000 c 4500</leader><controlfield tag="001">BV016464770</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20040723</controlfield><controlfield tag="007">t|</controlfield><controlfield tag="008">030124s2002 xx ad|| m||| 00||| eng d</controlfield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">966020626</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)216911671</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV016464770</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield><subfield code="a">ger</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-29</subfield><subfield code="a">DE-29T</subfield><subfield code="a">DE-12</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 7570</subfield><subfield code="0">(DE-625)146436:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 3460</subfield><subfield code="0">(DE-625)157317:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Christiansen, Silke H.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Current and future silicon based thin-film structures for electronic applications</subfield><subfield code="b">epitaxy and crystalline deposition on amorphous substrates</subfield><subfield code="c">von Silke H. Christiansen</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2002</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">307 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Erlangen-Nürnberg, Univ., Habil.-Schr., 2002. - Enth. Zsfassung in engl. und dt. Sprache</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Amorpher Zustand</subfield><subfield code="0">(DE-588)4306087-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Germanium</subfield><subfield code="0">(DE-588)4135644-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Epitaxieschicht</subfield><subfield code="0">(DE-588)4152546-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Heterostruktur</subfield><subfield code="0">(DE-588)4123378-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Kristallisation</subfield><subfield code="0">(DE-588)4033215-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Laserinduziertes Verfahren</subfield><subfield code="0">(DE-588)4476754-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Gitterbaufehler</subfield><subfield code="0">(DE-588)4125030-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Germanium</subfield><subfield code="0">(DE-588)4135644-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Heterostruktur</subfield><subfield code="0">(DE-588)4123378-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Epitaxieschicht</subfield><subfield code="0">(DE-588)4152546-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="4"><subfield code="a">Gitterbaufehler</subfield><subfield code="0">(DE-588)4125030-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Amorpher Zustand</subfield><subfield code="0">(DE-588)4306087-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="2"><subfield code="a">Kristallisation</subfield><subfield code="0">(DE-588)4033215-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="3"><subfield code="a">Laserinduziertes Verfahren</subfield><subfield code="0">(DE-588)4476754-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">DNB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010179114&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-010179114</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV016464770 |
| illustrated | Illustrated |
| indexdate | 2025-01-11T12:08:17Z |
| institution | BVB |
| language | English German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-010179114 |
| oclc_num | 216911671 |
| open_access_boolean | |
| owner | DE-29 DE-29T DE-12 |
| owner_facet | DE-29 DE-29T DE-12 |
| physical | 307 S. Ill., graph. Darst. |
| publishDate | 2002 |
| publishDateSearch | 2002 |
| publishDateSort | 2002 |
| record_format | marc |
| spelling | Christiansen, Silke H. Verfasser aut Current and future silicon based thin-film structures for electronic applications epitaxy and crystalline deposition on amorphous substrates von Silke H. Christiansen 2002 307 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Erlangen-Nürnberg, Univ., Habil.-Schr., 2002. - Enth. Zsfassung in engl. und dt. Sprache Amorpher Zustand (DE-588)4306087-0 gnd rswk-swf Germanium (DE-588)4135644-5 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Epitaxieschicht (DE-588)4152546-2 gnd rswk-swf Heterostruktur (DE-588)4123378-5 gnd rswk-swf Kristallisation (DE-588)4033215-9 gnd rswk-swf Laserinduziertes Verfahren (DE-588)4476754-7 gnd rswk-swf Gitterbaufehler (DE-588)4125030-8 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Silicium (DE-588)4077445-4 s Germanium (DE-588)4135644-5 s Heterostruktur (DE-588)4123378-5 s Epitaxieschicht (DE-588)4152546-2 s Gitterbaufehler (DE-588)4125030-8 s DE-604 Amorpher Zustand (DE-588)4306087-0 s Kristallisation (DE-588)4033215-9 s Laserinduziertes Verfahren (DE-588)4476754-7 s DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010179114&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Christiansen, Silke H. Current and future silicon based thin-film structures for electronic applications epitaxy and crystalline deposition on amorphous substrates Amorpher Zustand (DE-588)4306087-0 gnd Germanium (DE-588)4135644-5 gnd Silicium (DE-588)4077445-4 gnd Epitaxieschicht (DE-588)4152546-2 gnd Heterostruktur (DE-588)4123378-5 gnd Kristallisation (DE-588)4033215-9 gnd Laserinduziertes Verfahren (DE-588)4476754-7 gnd Gitterbaufehler (DE-588)4125030-8 gnd |
| subject_GND | (DE-588)4306087-0 (DE-588)4135644-5 (DE-588)4077445-4 (DE-588)4152546-2 (DE-588)4123378-5 (DE-588)4033215-9 (DE-588)4476754-7 (DE-588)4125030-8 (DE-588)4113937-9 |
| title | Current and future silicon based thin-film structures for electronic applications epitaxy and crystalline deposition on amorphous substrates |
| title_auth | Current and future silicon based thin-film structures for electronic applications epitaxy and crystalline deposition on amorphous substrates |
| title_exact_search | Current and future silicon based thin-film structures for electronic applications epitaxy and crystalline deposition on amorphous substrates |
| title_full | Current and future silicon based thin-film structures for electronic applications epitaxy and crystalline deposition on amorphous substrates von Silke H. Christiansen |
| title_fullStr | Current and future silicon based thin-film structures for electronic applications epitaxy and crystalline deposition on amorphous substrates von Silke H. Christiansen |
| title_full_unstemmed | Current and future silicon based thin-film structures for electronic applications epitaxy and crystalline deposition on amorphous substrates von Silke H. Christiansen |
| title_short | Current and future silicon based thin-film structures for electronic applications |
| title_sort | current and future silicon based thin film structures for electronic applications epitaxy and crystalline deposition on amorphous substrates |
| title_sub | epitaxy and crystalline deposition on amorphous substrates |
| topic | Amorpher Zustand (DE-588)4306087-0 gnd Germanium (DE-588)4135644-5 gnd Silicium (DE-588)4077445-4 gnd Epitaxieschicht (DE-588)4152546-2 gnd Heterostruktur (DE-588)4123378-5 gnd Kristallisation (DE-588)4033215-9 gnd Laserinduziertes Verfahren (DE-588)4476754-7 gnd Gitterbaufehler (DE-588)4125030-8 gnd |
| topic_facet | Amorpher Zustand Germanium Silicium Epitaxieschicht Heterostruktur Kristallisation Laserinduziertes Verfahren Gitterbaufehler Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010179114&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT christiansensilkeh currentandfuturesiliconbasedthinfilmstructuresforelectronicapplicationsepitaxyandcrystallinedepositiononamorphoussubstrates |