Hot carrier reliability of MOS VLSI circuits:
Gespeichert in:
Beteiligte Personen: | , |
---|---|
Format: | Buch |
Sprache: | Englisch |
Veröffentlicht: |
Boston u.a.
Kluwer Acad. Publ.
1993
|
Schriftenreihe: | The Kluwer international series in engineering and computer science
227 : VLSI, computer architecture and digital signal processing |
Schlagwörter: | |
Umfang: | XVI, 212 S. graph. Darst. |
ISBN: | 079239352X |
Internformat
MARC
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003 | DE-604 | ||
005 | 20060516 | ||
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035 | |a (DE-599)BVBBV009230801 | ||
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084 | |a ELT 358f |2 stub | ||
084 | |a ELT 240f |2 stub | ||
100 | 1 | |a Leblebici, Yusuf |e Verfasser |4 aut | |
245 | 1 | 0 | |a Hot carrier reliability of MOS VLSI circuits |c by Yusuf Leblebici ; Sung-Mo (Steve) Kang |
246 | 1 | 3 | |a Hot-carrier reliability of MOS VLSI circuits |
264 | 1 | |a Boston u.a. |b Kluwer Acad. Publ. |c 1993 | |
300 | |a XVI, 212 S. |b graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 1 | |a The Kluwer international series in engineering and computer science |v 227 : VLSI, computer architecture and digital signal processing | |
650 | 7 | |a Circuits intégrés à très grande échelle |2 ram | |
650 | 7 | |a Porteurs chauds |2 ram | |
650 | 4 | |a Mathematisches Modell | |
650 | 4 | |a Hot carriers |x Reliability |x Mathematical models | |
650 | 4 | |a Integrated circuits |x Very large scale integration |x Defects |x Mathematical models | |
650 | 4 | |a Metal oxide semiconductors |x Reliability |x Mathematical models | |
650 | 0 | 7 | |a Integrierte Schaltung |0 (DE-588)4027242-4 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a MOS |0 (DE-588)4130209-6 |2 gnd |9 rswk-swf |
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650 | 0 | 7 | |a Mathematisches Modell |0 (DE-588)4114528-8 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Zuverlässigkeit |0 (DE-588)4059245-5 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a VLSI |0 (DE-588)4117388-0 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a Heißes Elektron |0 (DE-588)4159455-1 |D s |
689 | 0 | 1 | |a MOS |0 (DE-588)4130209-6 |D s |
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689 | 1 | 0 | |a Zuverlässigkeit |0 (DE-588)4059245-5 |D s |
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689 | 3 | 0 | |a Integrierte Schaltung |0 (DE-588)4027242-4 |D s |
689 | 3 | |8 3\p |5 DE-604 | |
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883 | 1 | |8 3\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-006139206 |
Datensatz im Suchindex
DE-BY-TUM_call_number | 0001 94 A 919 |
---|---|
DE-BY-TUM_katkey | 619499 |
DE-BY-TUM_location | Mag |
DE-BY-TUM_media_number | 040000795202 |
_version_ | 1821930964293517312 |
any_adam_object | |
author | Leblebici, Yusuf Kang, Sung-Mo S. |
author_facet | Leblebici, Yusuf Kang, Sung-Mo S. |
author_role | aut aut |
author_sort | Leblebici, Yusuf |
author_variant | y l yl s m s k sms smsk |
building | Verbundindex |
bvnumber | BV009230801 |
callnumber-first | T - Technology |
callnumber-label | TK7874 |
callnumber-raw | TK7874 |
callnumber-search | TK7874 |
callnumber-sort | TK 47874 |
callnumber-subject | TK - Electrical and Nuclear Engineering |
classification_tum | ELT 358f ELT 240f |
ctrlnum | (OCoLC)27937993 (DE-599)BVBBV009230801 |
dewey-full | 621.39/5 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.39/5 |
dewey-search | 621.39/5 |
dewey-sort | 3621.39 15 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Book |
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id | DE-604.BV009230801 |
illustrated | Illustrated |
indexdate | 2024-12-20T09:34:41Z |
institution | BVB |
isbn | 079239352X |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006139206 |
oclc_num | 27937993 |
open_access_boolean | |
owner | DE-91 DE-BY-TUM DE-1050 |
owner_facet | DE-91 DE-BY-TUM DE-1050 |
physical | XVI, 212 S. graph. Darst. |
publishDate | 1993 |
publishDateSearch | 1993 |
publishDateSort | 1993 |
publisher | Kluwer Acad. Publ. |
record_format | marc |
series | The Kluwer international series in engineering and computer science |
series2 | The Kluwer international series in engineering and computer science |
spellingShingle | Leblebici, Yusuf Kang, Sung-Mo S. Hot carrier reliability of MOS VLSI circuits The Kluwer international series in engineering and computer science Circuits intégrés à très grande échelle ram Porteurs chauds ram Mathematisches Modell Hot carriers Reliability Mathematical models Integrated circuits Very large scale integration Defects Mathematical models Metal oxide semiconductors Reliability Mathematical models Integrierte Schaltung (DE-588)4027242-4 gnd MOS (DE-588)4130209-6 gnd Heißes Elektron (DE-588)4159455-1 gnd Mathematisches Modell (DE-588)4114528-8 gnd Zuverlässigkeit (DE-588)4059245-5 gnd VLSI (DE-588)4117388-0 gnd |
subject_GND | (DE-588)4027242-4 (DE-588)4130209-6 (DE-588)4159455-1 (DE-588)4114528-8 (DE-588)4059245-5 (DE-588)4117388-0 |
title | Hot carrier reliability of MOS VLSI circuits |
title_alt | Hot-carrier reliability of MOS VLSI circuits |
title_auth | Hot carrier reliability of MOS VLSI circuits |
title_exact_search | Hot carrier reliability of MOS VLSI circuits |
title_full | Hot carrier reliability of MOS VLSI circuits by Yusuf Leblebici ; Sung-Mo (Steve) Kang |
title_fullStr | Hot carrier reliability of MOS VLSI circuits by Yusuf Leblebici ; Sung-Mo (Steve) Kang |
title_full_unstemmed | Hot carrier reliability of MOS VLSI circuits by Yusuf Leblebici ; Sung-Mo (Steve) Kang |
title_short | Hot carrier reliability of MOS VLSI circuits |
title_sort | hot carrier reliability of mos vlsi circuits |
topic | Circuits intégrés à très grande échelle ram Porteurs chauds ram Mathematisches Modell Hot carriers Reliability Mathematical models Integrated circuits Very large scale integration Defects Mathematical models Metal oxide semiconductors Reliability Mathematical models Integrierte Schaltung (DE-588)4027242-4 gnd MOS (DE-588)4130209-6 gnd Heißes Elektron (DE-588)4159455-1 gnd Mathematisches Modell (DE-588)4114528-8 gnd Zuverlässigkeit (DE-588)4059245-5 gnd VLSI (DE-588)4117388-0 gnd |
topic_facet | Circuits intégrés à très grande échelle Porteurs chauds Mathematisches Modell Hot carriers Reliability Mathematical models Integrated circuits Very large scale integration Defects Mathematical models Metal oxide semiconductors Reliability Mathematical models Integrierte Schaltung MOS Heißes Elektron Zuverlässigkeit VLSI |
volume_link | (DE-604)BV023545171 |
work_keys_str_mv | AT leblebiciyusuf hotcarrierreliabilityofmosvlsicircuits AT kangsungmos hotcarrierreliabilityofmosvlsicircuits |
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0001 94 A 919 Lageplan |
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