Ion implantation in semiconductors: silicon and germanium
Gespeichert in:
| Beteiligte Personen: | , , |
|---|---|
| Format: | Buch |
| Sprache: | Nichtbestimmte Sprache |
| Veröffentlicht: |
New York u.a.
Acad. Pr.
1983
|
| Schlagwörter: | |
| Umfang: | XIII, 280 S. Ill., graph. Darst. |
| ISBN: | 0124808506 |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV004290056 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | t| | ||
| 008 | 910313s1983 xx ad|| |||| 00||| und d | ||
| 020 | |a 0124808506 |9 0-12-480850-6 | ||
| 035 | |a (OCoLC)630409682 | ||
| 035 | |a (DE-599)BVBBV004290056 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | |a und | ||
| 049 | |a DE-384 | ||
| 084 | |a UP 3000 |0 (DE-625)146369: |2 rvk | ||
| 100 | 1 | |a Mayer, James W. |d 1930-2013 |e Verfasser |0 (DE-588)121494349 |4 aut | |
| 245 | 1 | 0 | |a Ion implantation in semiconductors |b silicon and germanium |c James W. Mayer, Lennart Eriksson and John A. Davies |
| 264 | 1 | |a New York u.a. |b Acad. Pr. |c 1983 | |
| 300 | |a XIII, 280 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Ionenimplantation |0 (DE-588)4027606-5 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 0 | 1 | |a Ionenimplantation |0 (DE-588)4027606-5 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Eriksson, Lennart |e Verfasser |0 (DE-588)128208023 |4 aut | |
| 700 | 1 | |a Davies, John A. |e Verfasser |4 aut | |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-002668601 | |
Datensatz im Suchindex
| _version_ | 1818946505682190336 |
|---|---|
| any_adam_object | |
| author | Mayer, James W. 1930-2013 Eriksson, Lennart Davies, John A. |
| author_GND | (DE-588)121494349 (DE-588)128208023 |
| author_facet | Mayer, James W. 1930-2013 Eriksson, Lennart Davies, John A. |
| author_role | aut aut aut |
| author_sort | Mayer, James W. 1930-2013 |
| author_variant | j w m jw jwm l e le j a d ja jad |
| building | Verbundindex |
| bvnumber | BV004290056 |
| classification_rvk | UP 3000 |
| ctrlnum | (OCoLC)630409682 (DE-599)BVBBV004290056 |
| discipline | Physik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01225nam a2200349 c 4500</leader><controlfield tag="001">BV004290056</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">t|</controlfield><controlfield tag="008">910313s1983 xx ad|| |||| 00||| und d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0124808506</subfield><subfield code="9">0-12-480850-6</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)630409682</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV004290056</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">und</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-384</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3000</subfield><subfield code="0">(DE-625)146369:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Mayer, James W.</subfield><subfield code="d">1930-2013</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)121494349</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Ion implantation in semiconductors</subfield><subfield code="b">silicon and germanium</subfield><subfield code="c">James W. Mayer, Lennart Eriksson and John A. Davies</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">New York u.a.</subfield><subfield code="b">Acad. Pr.</subfield><subfield code="c">1983</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XIII, 280 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Ionenimplantation</subfield><subfield code="0">(DE-588)4027606-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Ionenimplantation</subfield><subfield code="0">(DE-588)4027606-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Eriksson, Lennart</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)128208023</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Davies, John A.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-002668601</subfield></datafield></record></collection> |
| id | DE-604.BV004290056 |
| illustrated | Illustrated |
| indexdate | 2024-12-20T08:16:05Z |
| institution | BVB |
| isbn | 0124808506 |
| language | Undetermined |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-002668601 |
| oclc_num | 630409682 |
| open_access_boolean | |
| owner | DE-384 |
| owner_facet | DE-384 |
| physical | XIII, 280 S. Ill., graph. Darst. |
| publishDate | 1983 |
| publishDateSearch | 1983 |
| publishDateSort | 1983 |
| publisher | Acad. Pr. |
| record_format | marc |
| spelling | Mayer, James W. 1930-2013 Verfasser (DE-588)121494349 aut Ion implantation in semiconductors silicon and germanium James W. Mayer, Lennart Eriksson and John A. Davies New York u.a. Acad. Pr. 1983 XIII, 280 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Halbleiter (DE-588)4022993-2 gnd rswk-swf Ionenimplantation (DE-588)4027606-5 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Ionenimplantation (DE-588)4027606-5 s DE-604 Eriksson, Lennart Verfasser (DE-588)128208023 aut Davies, John A. Verfasser aut |
| spellingShingle | Mayer, James W. 1930-2013 Eriksson, Lennart Davies, John A. Ion implantation in semiconductors silicon and germanium Halbleiter (DE-588)4022993-2 gnd Ionenimplantation (DE-588)4027606-5 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4027606-5 |
| title | Ion implantation in semiconductors silicon and germanium |
| title_auth | Ion implantation in semiconductors silicon and germanium |
| title_exact_search | Ion implantation in semiconductors silicon and germanium |
| title_full | Ion implantation in semiconductors silicon and germanium James W. Mayer, Lennart Eriksson and John A. Davies |
| title_fullStr | Ion implantation in semiconductors silicon and germanium James W. Mayer, Lennart Eriksson and John A. Davies |
| title_full_unstemmed | Ion implantation in semiconductors silicon and germanium James W. Mayer, Lennart Eriksson and John A. Davies |
| title_short | Ion implantation in semiconductors |
| title_sort | ion implantation in semiconductors silicon and germanium |
| title_sub | silicon and germanium |
| topic | Halbleiter (DE-588)4022993-2 gnd Ionenimplantation (DE-588)4027606-5 gnd |
| topic_facet | Halbleiter Ionenimplantation |
| work_keys_str_mv | AT mayerjamesw ionimplantationinsemiconductorssiliconandgermanium AT erikssonlennart ionimplantationinsemiconductorssiliconandgermanium AT daviesjohna ionimplantationinsemiconductorssiliconandgermanium |