Verfügbarkeit: Extended Monolithic Integration Levels for Highly Functional GaN Power ICs.

Extended Monolithic Integration Levels for Highly Functional GaN Power ICs.:

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Bibliographische Detailangaben
Beteilige Person:	Basler, Michael (VerfasserIn)
Format:	Hochschulschrift/Dissertation Buch
Sprache:	Englisch
Veröffentlicht:	Stuttgart Fraunhofer Verlag 2023
Schriftenreihe:	Science for systems 62
Schlagwörter:	Monolithische Schaltung Galliumnitrid Gleichrichter Leistungsschalter Gleichstromwandler Power Integrated Circuits Gallium Nitride Integrated Circuit Technology Monolithic Integrated Circuits Wide Band Gap Semiconductors Elektroingenieure, Materialwissenschaftler, Physiker Hochschulschrift
Links:	http://deposit.dnb.de/cgi-bin/dokserv?id=3bf09b56c8d64e3d8b1d31e64543e712&prov=M&dok_var=1&dok_ext=htm http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=034566852&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
Umfang:	XII, 159 Seiten Diagramme 21 cm x 14.8 cm
ISBN:	9783839619001 3839619009

Internformat

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Datensatz im Suchindex

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adam_text	CONTENTS 1 INTRODUCTION ............................................................................................................ 1 1.1 MOTIVATION .......................................................................................................... 1 1.2 GAN POWER ICS ................................................................................................ 4 1.3 LEVELS OF INTEGRATION ...................................................................................... 7 1.4 PURPOSE OF THE WORK ...................................................................................... 10 1.5 STRUCTURE OF THE WORK ................................................................................... 11 2 GAN POWER IC PLATFORM ......................................................................................... 15 2.1 TECHNOLOGY ...................................................................................................... 15 2.1.1 EPITAXY ............................................................................................... 15 2.1.2 PROCESS TECHNOLOGY ........................................................................... 16 2.2 PROCESS DESIGN KIT ......................................................................................... 18 3 DESIGN AND CHARACTERIZATION AT DEVICE LEVEL ................................................. 21 3.1 ACTIVE DEVICES ................................................................................................... 21 3.1.1 HIGH-ELECTRON-MOBILITY TRANSISTORS .................................................. 21 3.1.2 SCHOTTKY BARRIER DIODES .................................................................. 25 3.1.3 LATERAL FIELD-EFFECT RECTIFIERS ........................................................ 26 3.1.4 CURRENT CARRYING CAPACITY OF LAYOUT STRUCTURES .......................... 27 3.2 PASSIVE DEVICES ................................................................................................ 30 3.2.1 METAL AND EPITAXIAL RESISTORS ........................................................... 30 3.2.2 METAL-INSULATOR-METAL AND P-GAN GATE CAPACITORS ..................... 33 3.2.3 SPIRAL INDUCTORS ................................................................................. 38 3.3 CONCLUSION ......................................................................................................... 44 4 DESIGN AND CHARACTERIZATION AT BUILDING BLOCK LEVEL ................................. 45 4.1 DIGITAL CIRCUITS ................................................................................................ 45 4.1.1 LOGIC GATE CHARACTERISTICS .............................................................. 45 4.1.2 NOT GATES WITH DIFFERENT LOAD CONFIGURATIONS ........................... 48 4.1.3 NOT GATES WITH REDUCED STATIC POWER DISSIPATION ...................... 51 4.1.4 NOR, NAND AND OTHER COMBINED GATES ....................................... 53 4.1.5 MINIATURIZED STANDARD LOGIC CELL ..................................................... 55 4.2 ANALOG CIRCUITS ............................................................................................... 56 4.2.1 HIGH-GAIN DIFFERENTIAL AMPLIFIERS ..................................................... 57 4.2.2 MULTI-STAGE COMPARATORS .................................................................. 58 4.2.3 CURRENT MIRRORS AND REFERENCES ..................................................... 62 4.3 CONCLUSION ......................................................................................................... 65 II CONTENTS 5 CASE STUDY I: MONOLITHICALLY INTEGRATED SYNCHRONOUS BUCK CONVERTER . . 67 5.1 MOTIVATION ......................................................................................................... 67 5.2 FUNDAMENTALS ................................................................................................... 68 5.2.1 SYNCHRONOUS BUCK CONVERTER ........................................................... 69 5.2.2 VOLTAGE MODE CONTROL ..................................................................... 70 5.3 DESIGN ................................................................................................................ 72 5.3.1 HALF-BRIDGE ......................................................................................... 72 5.3.2 GATE DRIVER ......................................................................................... 74 5.3.3 LEVEL SHIFTER ...................................................................................... 79 5.3.4 DEAD TIME CONTROL ............................................................................ 81 5.3.5 PWM AND SAWTOOTH GENERATOR ..................................................... 82 5.4 EXPERIMENTAL RESULTS ...................................................................................... 83 5.5 COMPARISON WITH PRIOR ART ............................................................................ 87 5.6 CONCLUSION AND OUTLOOK .................................................................................. 89 6 CASE STUDY II: MONOLITHICALLY INTEGRATED ACTIVE RECTIFIER DIODE .............. 93 6.1 MOTIVATION ......................................................................................................... 93 6.2 FUNDAMENTALS ................................................................................................... 94 6.2.1 ACTIVE RECTIFICATION ............................................................................ 94 6.2.2 THEORETICAL LIMITS ............................................................................ 95 6.3 DESIGN ................................................................................................................ 99 6.3.1 POWER SWITCH ...................................................................................... 99 6.3.2 CONTROL ................................................................................................ 100 6.3.3 AUXILIARY POWER SUPPLY ..................................................................... 103 6.4 EXPERIMENTAL RESULTS ...................................................................................... 106 6.5 COMPARISON WITH PRIOR ART ............................................................................ 109 6.6 CONCLUSION AND OUTLOOK .................................................................................. ILL 7 GAN POWER INTEGRATION ......................................................................................... 115 7.1 FINDINGS ............................................................................................................. 115 7.2 COMPARISON OF IC TECHNOLOGIES ..................................................................... 117 7.3 COMPARISON OF GAN POWER ICS ..................................................................... 119 7.4 FURTHER CHALLENGES AND FUTURE PROSPECTS .................................................. 121 7.5 SOCIAL IMPACT AND BENEFIT ............................................................................... 123 8 CONCLUSION ............................................................................................................... 125 REFERENCES ..................................................................................................................... 127 LIST OF PUBLISHED WORK .............................................................................................. 155 ACKNOWLEDGMENT ............................................................................................................ 159
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author	Basler, Michael
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institution	BVB
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isbn	9783839619001 3839619009
language	English
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physical	XII, 159 Seiten Diagramme 21 cm x 14.8 cm
publishDate	2023
publishDateSearch	2023
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publisher	Fraunhofer Verlag
record_format	marc
series	Science for systems
series2	Science for systems
spellingShingle	Basler, Michael Extended Monolithic Integration Levels for Highly Functional GaN Power ICs. Science for systems Monolithische Schaltung (DE-588)4359011-1 gnd Galliumnitrid (DE-588)4375592-6 gnd Gleichrichter (DE-588)4021239-7 gnd Leistungsschalter (DE-588)4167301-3 gnd Gleichstromwandler (DE-588)4157556-8 gnd
subject_GND	(DE-588)4359011-1 (DE-588)4375592-6 (DE-588)4021239-7 (DE-588)4167301-3 (DE-588)4157556-8 (DE-588)4113937-9
title	Extended Monolithic Integration Levels for Highly Functional GaN Power ICs.
title_auth	Extended Monolithic Integration Levels for Highly Functional GaN Power ICs.
title_exact_search	Extended Monolithic Integration Levels for Highly Functional GaN Power ICs.
title_full	Extended Monolithic Integration Levels for Highly Functional GaN Power ICs. Michael Basler
title_fullStr	Extended Monolithic Integration Levels for Highly Functional GaN Power ICs. Michael Basler
title_full_unstemmed	Extended Monolithic Integration Levels for Highly Functional GaN Power ICs. Michael Basler
title_short	Extended Monolithic Integration Levels for Highly Functional GaN Power ICs.
title_sort	extended monolithic integration levels for highly functional gan power ics
topic	Monolithische Schaltung (DE-588)4359011-1 gnd Galliumnitrid (DE-588)4375592-6 gnd Gleichrichter (DE-588)4021239-7 gnd Leistungsschalter (DE-588)4167301-3 gnd Gleichstromwandler (DE-588)4157556-8 gnd
topic_facet	Monolithische Schaltung Galliumnitrid Gleichrichter Leistungsschalter Gleichstromwandler Hochschulschrift
url	http://deposit.dnb.de/cgi-bin/dokserv?id=3bf09b56c8d64e3d8b1d31e64543e712&prov=M&dok_var=1&dok_ext=htm http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=034566852&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
volume_link	(DE-604)BV042534020
work_keys_str_mv	AT baslermichael extendedmonolithicintegrationlevelsforhighlyfunctionalganpowerics AT fraunhoferirbverlag extendedmonolithicintegrationlevelsforhighlyfunctionalganpowerics

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