Extended Monolithic Integration Levels for Highly Functional GaN Power ICs.:
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis/Dissertation Book |
| Language: | English |
| Published: |
Stuttgart
Fraunhofer Verlag
2023
|
| Series: | Science for systems
62 |
| Subjects: | |
| Links: | http://deposit.dnb.de/cgi-bin/dokserv?id=3bf09b56c8d64e3d8b1d31e64543e712&prov=M&dok_var=1&dok_ext=htm http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=034566852&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| Physical Description: | XII, 159 Seiten Diagramme 21 cm x 14.8 cm |
| ISBN: | 9783839619001 3839619009 |
Staff View
MARC
| LEADER | 00000nam a22000008cb4500 | ||
|---|---|---|---|
| 001 | BV049305659 | ||
| 003 | DE-604 | ||
| 005 | 20240116 | ||
| 007 | t| | ||
| 008 | 230830s2023 gw |||| m||| 00||| eng d | ||
| 015 | |a 23,N14 |2 dnb | ||
| 016 | 7 | |a 1284590291 |2 DE-101 | |
| 020 | |a 9783839619001 |c : EUR 57.00 (DE), EUR 58.60 (AT), CHF 87.80 (freier Preis) |9 978-3-8396-1900-1 | ||
| 020 | |a 3839619009 |9 3-8396-1900-9 | ||
| 024 | 3 | |a 9783839619001 | |
| 028 | 5 | 2 | |a Bestellnummer: fhg-iaf_73 |
| 035 | |a (OCoLC)1380365956 | ||
| 035 | |a (DE-599)DNB1284590291 | ||
| 040 | |a DE-604 |b ger |e rda | ||
| 041 | 0 | |a eng | |
| 044 | |a gw |c XA-DE-BW | ||
| 049 | |a DE-83 | ||
| 084 | |a ZN 8340 |0 (DE-625)157614: |2 rvk | ||
| 084 | |a ZN 8360 |0 (DE-625)157616: |2 rvk | ||
| 084 | |8 1\p |a 621.3 |2 23sdnb | ||
| 100 | 1 | |a Basler, Michael |e Verfasser |0 (DE-588)1282670441 |4 aut | |
| 245 | 1 | 0 | |a Extended Monolithic Integration Levels for Highly Functional GaN Power ICs. |c Michael Basler |
| 264 | 1 | |a Stuttgart |b Fraunhofer Verlag |c 2023 | |
| 300 | |a XII, 159 Seiten |b Diagramme |c 21 cm x 14.8 cm | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Science for systems |v 62 | |
| 502 | |b Dissertation |c Universität Freiburg |d 2023 | ||
| 650 | 0 | 7 | |a Monolithische Schaltung |0 (DE-588)4359011-1 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Galliumnitrid |0 (DE-588)4375592-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Gleichrichter |0 (DE-588)4021239-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Leistungsschalter |0 (DE-588)4167301-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Gleichstromwandler |0 (DE-588)4157556-8 |2 gnd |9 rswk-swf |
| 653 | |a Power Integrated Circuits | ||
| 653 | |a Gallium Nitride | ||
| 653 | |a Integrated Circuit Technology | ||
| 653 | |a Monolithic Integrated Circuits | ||
| 653 | |a Wide Band Gap Semiconductors | ||
| 653 | |a Elektroingenieure, Materialwissenschaftler, Physiker | ||
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Monolithische Schaltung |0 (DE-588)4359011-1 |D s |
| 689 | 0 | 1 | |a Galliumnitrid |0 (DE-588)4375592-6 |D s |
| 689 | 0 | 2 | |a Gleichstromwandler |0 (DE-588)4157556-8 |D s |
| 689 | 0 | 3 | |a Gleichrichter |0 (DE-588)4021239-7 |D s |
| 689 | 0 | 4 | |a Leistungsschalter |0 (DE-588)4167301-3 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Monolithische Schaltung |0 (DE-588)4359011-1 |D s |
| 689 | 1 | 1 | |a Leistungsschalter |0 (DE-588)4167301-3 |D s |
| 689 | 1 | 2 | |a Galliumnitrid |0 (DE-588)4375592-6 |D s |
| 689 | 1 | |5 DE-604 | |
| 710 | 2 | |a Fraunhofer IRB-Verlag |0 (DE-588)4786605-6 |4 pbl | |
| 830 | 0 | |a Science for systems |v 62 |w (DE-604)BV042534020 |9 62 | |
| 856 | 4 | 2 | |m X:MVB |q text/html |u http://deposit.dnb.de/cgi-bin/dokserv?id=3bf09b56c8d64e3d8b1d31e64543e712&prov=M&dok_var=1&dok_ext=htm |3 Inhaltstext |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=034566852&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 883 | 1 | |8 1\p |a vlb |d 20230328 |q DE-101 |u https://d-nb.info/provenance/plan#vlb | |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-034566852 | |
Record in the Search Index
| _version_ | 1819336807998816256 |
|---|---|
| adam_text | CONTENTS
1
INTRODUCTION
............................................................................................................
1
1.1
MOTIVATION
..........................................................................................................
1
1.2
GAN
POWER
ICS
................................................................................................
4
1.3
LEVELS
OF
INTEGRATION
......................................................................................
7
1.4
PURPOSE
OF
THE
WORK
......................................................................................
10
1.5
STRUCTURE
OF
THE
WORK
...................................................................................
11
2
GAN
POWER
IC
PLATFORM
.........................................................................................
15
2.1
TECHNOLOGY
......................................................................................................
15
2.1.1
EPITAXY
...............................................................................................
15
2.1.2
PROCESS
TECHNOLOGY
...........................................................................
16
2.2
PROCESS
DESIGN
KIT
.........................................................................................
18
3
DESIGN
AND
CHARACTERIZATION
AT
DEVICE
LEVEL
.................................................
21
3.1
ACTIVE
DEVICES
...................................................................................................
21
3.1.1
HIGH-ELECTRON-MOBILITY
TRANSISTORS
..................................................
21
3.1.2
SCHOTTKY
BARRIER
DIODES
..................................................................
25
3.1.3
LATERAL
FIELD-EFFECT
RECTIFIERS
........................................................
26
3.1.4
CURRENT
CARRYING
CAPACITY
OF
LAYOUT
STRUCTURES
..........................
27
3.2
PASSIVE
DEVICES
................................................................................................
30
3.2.1
METAL
AND
EPITAXIAL
RESISTORS
...........................................................
30
3.2.2
METAL-INSULATOR-METAL
AND
P-GAN
GATE
CAPACITORS
.....................
33
3.2.3
SPIRAL
INDUCTORS
.................................................................................
38
3.3
CONCLUSION
.........................................................................................................
44
4
DESIGN
AND
CHARACTERIZATION
AT
BUILDING
BLOCK
LEVEL
.................................
45
4.1
DIGITAL
CIRCUITS
................................................................................................
45
4.1.1
LOGIC
GATE
CHARACTERISTICS
..............................................................
45
4.1.2
NOT
GATES
WITH
DIFFERENT
LOAD
CONFIGURATIONS
...........................
48
4.1.3
NOT
GATES
WITH
REDUCED
STATIC
POWER
DISSIPATION
......................
51
4.1.4
NOR,
NAND
AND
OTHER
COMBINED
GATES
.......................................
53
4.1.5
MINIATURIZED
STANDARD
LOGIC
CELL
.....................................................
55
4.2
ANALOG
CIRCUITS
...............................................................................................
56
4.2.1
HIGH-GAIN
DIFFERENTIAL
AMPLIFIERS
.....................................................
57
4.2.2
MULTI-STAGE
COMPARATORS
..................................................................
58
4.2.3
CURRENT
MIRRORS
AND
REFERENCES
.....................................................
62
4.3
CONCLUSION
.........................................................................................................
65
II
CONTENTS
5
CASE
STUDY
I:
MONOLITHICALLY
INTEGRATED
SYNCHRONOUS
BUCK
CONVERTER
.
.
67
5.1
MOTIVATION
.........................................................................................................
67
5.2
FUNDAMENTALS
...................................................................................................
68
5.2.1
SYNCHRONOUS
BUCK
CONVERTER
...........................................................
69
5.2.2
VOLTAGE
MODE
CONTROL
.....................................................................
70
5.3
DESIGN
................................................................................................................
72
5.3.1
HALF-BRIDGE
.........................................................................................
72
5.3.2
GATE
DRIVER
.........................................................................................
74
5.3.3
LEVEL
SHIFTER
......................................................................................
79
5.3.4
DEAD
TIME
CONTROL
............................................................................
81
5.3.5
PWM
AND
SAWTOOTH
GENERATOR
.....................................................
82
5.4
EXPERIMENTAL
RESULTS
......................................................................................
83
5.5
COMPARISON
WITH
PRIOR
ART
............................................................................
87
5.6
CONCLUSION
AND
OUTLOOK
..................................................................................
89
6
CASE
STUDY
II:
MONOLITHICALLY
INTEGRATED
ACTIVE
RECTIFIER
DIODE
..............
93
6.1
MOTIVATION
.........................................................................................................
93
6.2
FUNDAMENTALS
...................................................................................................
94
6.2.1
ACTIVE
RECTIFICATION
............................................................................
94
6.2.2
THEORETICAL
LIMITS
............................................................................
95
6.3
DESIGN
................................................................................................................
99
6.3.1
POWER
SWITCH
......................................................................................
99
6.3.2
CONTROL
................................................................................................
100
6.3.3
AUXILIARY
POWER
SUPPLY
.....................................................................
103
6.4
EXPERIMENTAL
RESULTS
......................................................................................
106
6.5
COMPARISON
WITH
PRIOR
ART
............................................................................
109
6.6
CONCLUSION
AND
OUTLOOK
..................................................................................
ILL
7
GAN
POWER
INTEGRATION
.........................................................................................
115
7.1
FINDINGS
.............................................................................................................
115
7.2
COMPARISON
OF
IC
TECHNOLOGIES
.....................................................................
117
7.3
COMPARISON
OF
GAN
POWER
ICS
.....................................................................
119
7.4
FURTHER
CHALLENGES
AND
FUTURE
PROSPECTS
..................................................
121
7.5
SOCIAL
IMPACT
AND
BENEFIT
...............................................................................
123
8
CONCLUSION
...............................................................................................................
125
REFERENCES
.....................................................................................................................
127
LIST
OF
PUBLISHED
WORK
..............................................................................................
155
ACKNOWLEDGMENT
............................................................................................................
159
|
| any_adam_object | 1 |
| author | Basler, Michael |
| author_GND | (DE-588)1282670441 |
| author_facet | Basler, Michael |
| author_role | aut |
| author_sort | Basler, Michael |
| author_variant | m b mb |
| building | Verbundindex |
| bvnumber | BV049305659 |
| classification_rvk | ZN 8340 ZN 8360 |
| ctrlnum | (OCoLC)1380365956 (DE-599)DNB1284590291 |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Thesis Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>03068nam a22007098cb4500</leader><controlfield tag="001">BV049305659</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20240116 </controlfield><controlfield tag="007">t|</controlfield><controlfield tag="008">230830s2023 gw |||| m||| 00||| eng d</controlfield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">23,N14</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">1284590291</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783839619001</subfield><subfield code="c">: EUR 57.00 (DE), EUR 58.60 (AT), CHF 87.80 (freier Preis)</subfield><subfield code="9">978-3-8396-1900-1</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3839619009</subfield><subfield code="9">3-8396-1900-9</subfield></datafield><datafield tag="024" ind1="3" ind2=" "><subfield code="a">9783839619001</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">Bestellnummer: fhg-iaf_73</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)1380365956</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DNB1284590291</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">XA-DE-BW</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-83</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 8340</subfield><subfield code="0">(DE-625)157614:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 8360</subfield><subfield code="0">(DE-625)157616:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="8">1\p</subfield><subfield code="a">621.3</subfield><subfield code="2">23sdnb</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Basler, Michael</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)1282670441</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Extended Monolithic Integration Levels for Highly Functional GaN Power ICs.</subfield><subfield code="c">Michael Basler</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Stuttgart</subfield><subfield code="b">Fraunhofer Verlag</subfield><subfield code="c">2023</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XII, 159 Seiten</subfield><subfield code="b">Diagramme</subfield><subfield code="c">21 cm x 14.8 cm</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Science for systems</subfield><subfield code="v">62</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="b">Dissertation</subfield><subfield code="c">Universität Freiburg</subfield><subfield code="d">2023</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Monolithische Schaltung</subfield><subfield code="0">(DE-588)4359011-1</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Galliumnitrid</subfield><subfield code="0">(DE-588)4375592-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Gleichrichter</subfield><subfield code="0">(DE-588)4021239-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Leistungsschalter</subfield><subfield code="0">(DE-588)4167301-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Gleichstromwandler</subfield><subfield code="0">(DE-588)4157556-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Power Integrated Circuits</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Gallium Nitride</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Integrated Circuit Technology</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Monolithic Integrated Circuits</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Wide Band Gap Semiconductors</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Elektroingenieure, Materialwissenschaftler, Physiker</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Monolithische Schaltung</subfield><subfield code="0">(DE-588)4359011-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Galliumnitrid</subfield><subfield code="0">(DE-588)4375592-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Gleichstromwandler</subfield><subfield code="0">(DE-588)4157556-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Gleichrichter</subfield><subfield code="0">(DE-588)4021239-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="4"><subfield code="a">Leistungsschalter</subfield><subfield code="0">(DE-588)4167301-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Monolithische Schaltung</subfield><subfield code="0">(DE-588)4359011-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Leistungsschalter</subfield><subfield code="0">(DE-588)4167301-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="2"><subfield code="a">Galliumnitrid</subfield><subfield code="0">(DE-588)4375592-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="710" ind1="2" ind2=" "><subfield code="a">Fraunhofer IRB-Verlag</subfield><subfield code="0">(DE-588)4786605-6</subfield><subfield code="4">pbl</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Science for systems</subfield><subfield code="v">62</subfield><subfield code="w">(DE-604)BV042534020</subfield><subfield code="9">62</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">X:MVB</subfield><subfield code="q">text/html</subfield><subfield code="u">http://deposit.dnb.de/cgi-bin/dokserv?id=3bf09b56c8d64e3d8b1d31e64543e712&prov=M&dok_var=1&dok_ext=htm</subfield><subfield code="3">Inhaltstext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">DNB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=034566852&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">vlb</subfield><subfield code="d">20230328</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#vlb</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-034566852</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV049305659 |
| illustrated | Not Illustrated |
| indexdate | 2024-12-20T20:06:04Z |
| institution | BVB |
| institution_GND | (DE-588)4786605-6 |
| isbn | 9783839619001 3839619009 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-034566852 |
| oclc_num | 1380365956 |
| open_access_boolean | |
| owner | DE-83 |
| owner_facet | DE-83 |
| physical | XII, 159 Seiten Diagramme 21 cm x 14.8 cm |
| publishDate | 2023 |
| publishDateSearch | 2023 |
| publishDateSort | 2023 |
| publisher | Fraunhofer Verlag |
| record_format | marc |
| series | Science for systems |
| series2 | Science for systems |
| spellingShingle | Basler, Michael Extended Monolithic Integration Levels for Highly Functional GaN Power ICs. Science for systems Monolithische Schaltung (DE-588)4359011-1 gnd Galliumnitrid (DE-588)4375592-6 gnd Gleichrichter (DE-588)4021239-7 gnd Leistungsschalter (DE-588)4167301-3 gnd Gleichstromwandler (DE-588)4157556-8 gnd |
| subject_GND | (DE-588)4359011-1 (DE-588)4375592-6 (DE-588)4021239-7 (DE-588)4167301-3 (DE-588)4157556-8 (DE-588)4113937-9 |
| title | Extended Monolithic Integration Levels for Highly Functional GaN Power ICs. |
| title_auth | Extended Monolithic Integration Levels for Highly Functional GaN Power ICs. |
| title_exact_search | Extended Monolithic Integration Levels for Highly Functional GaN Power ICs. |
| title_full | Extended Monolithic Integration Levels for Highly Functional GaN Power ICs. Michael Basler |
| title_fullStr | Extended Monolithic Integration Levels for Highly Functional GaN Power ICs. Michael Basler |
| title_full_unstemmed | Extended Monolithic Integration Levels for Highly Functional GaN Power ICs. Michael Basler |
| title_short | Extended Monolithic Integration Levels for Highly Functional GaN Power ICs. |
| title_sort | extended monolithic integration levels for highly functional gan power ics |
| topic | Monolithische Schaltung (DE-588)4359011-1 gnd Galliumnitrid (DE-588)4375592-6 gnd Gleichrichter (DE-588)4021239-7 gnd Leistungsschalter (DE-588)4167301-3 gnd Gleichstromwandler (DE-588)4157556-8 gnd |
| topic_facet | Monolithische Schaltung Galliumnitrid Gleichrichter Leistungsschalter Gleichstromwandler Hochschulschrift |
| url | http://deposit.dnb.de/cgi-bin/dokserv?id=3bf09b56c8d64e3d8b1d31e64543e712&prov=M&dok_var=1&dok_ext=htm http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=034566852&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV042534020 |
| work_keys_str_mv | AT baslermichael extendedmonolithicintegrationlevelsforhighlyfunctionalganpowerics AT fraunhoferirbverlag extendedmonolithicintegrationlevelsforhighlyfunctionalganpowerics |