Sub-micron semiconductor devices: design and applications
This comprehensive reference text discusses novel semiconductor devices including nanostructure field effect transistor, photodiodes, high-electron-mobility transistor, and oxide-based devices. The text covers sub-micron semiconductor devices, device modeling, novel materials for devices, novel semi...
Gespeichert in:
| Weitere beteiligte Personen: | , , |
|---|---|
| Format: | Buch |
| Sprache: | Englisch |
| Veröffentlicht: |
Boca Raton ; London ; New York
CRC Press, Taylor & Francis Group
2022
|
| Ausgabe: | Frist edition |
| Schlagwörter: | |
| Zusammenfassung: | This comprehensive reference text discusses novel semiconductor devices including nanostructure field effect transistor, photodiodes, high-electron-mobility transistor, and oxide-based devices. The text covers sub-micron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devises, optimization techniques and application in detail. It covers important topics including negative capacitance devices, surface-plasmon resonance devices, fermi-level pinning, external stimuli-based optimization techniques, optoelectronic devices, and architecture-based optimization techniques.The book• covers novel semiconductor devices with sub-micron dimensions.• discusses comprehensive device optimization techniques.• examines conceptualization and modeling of the semiconductor devices.• covers circuit and sensor-based application of the novel devices.• discusses novel materials for next generation devices.The text will be useful for graduate students and professionals in the fields including electrical engineering, electronics and communication engineering, materials science, and nanoscience |
| Beschreibung: | 1. Fundamental Phenomena in Nano scale Semiconductor Devices. 2. Recent Advancements in Growth and Stability of Phosphorene- Prospects for High-Performance Devices. 3. Study of Transition Metal Dichalcogenides in Junctionless Transistors and Effect of Variation in Dielectric Oxide. 4. GNRFET Based Ternary Repeaters: Prospects and Potential Implementation for Efficient GNR Interconnects. 5. An Effective Study on Particulate Matter (PM) Removal Using Graphene Filter. 6. Recent trends in Fabrication of Graphene-Based Devices for Detection of Heavy Metal Ions in Water. 7. Vertical Tunnel FET having Dual MOSCAP Geometry. 8. Leakage Current and Capacitance reduction in CMOS Technology. 9. Design of SiGe sourced Gate-All-Around TFET with Gate-On-Source for Enhanced Analog Performance. 10. Solving Schrodinger’s Equation for Low Dimensional Nanostructures for Understanding Quantum Confinement Effects.11. Simulation of Reconfigurable FET circuits using Sentaurus TCAD Tool. 12. - NEGF Method for Design and Simulation Analysis of Nano-Scale MOS Devices. 13. Performance investigation of a novel Si/Ge heterojunction Asymmetric DoubleGate Doping Less Tunnel Field Effect Transistor for low-power analog/RF and IoT Applications. 14. Synthesis of Graphene Nanocomposites toward the Enhancement of Energy Storage Performance for Supercapacitors. 15. Design and Analysis of Dopingless Charge Plasma Based Ring Architecture of Tunnel Field Effect Transistor for Low Power Application. 16. Hybrid Intelligent Technique Based Doping Profile Optimization in a Double Gate Heter-Dielectric TFET. 17. Graphene Nanoribbon Devices: Advances in Fabrication And Applications. 18. Design and Analysis of Various Neural Preamplifier Circuits. 19. Design and Analysis of Transition Metal Dichalcogenides Based Feedback Transistor. 20. Reduced Graphene-Metal Phthalocyanine Based Nanohybrids for Gas Sensing Applications. 21. - Phosphorene Multigate Field-Effect Transistors for High-Frequency Applications. 22. Analytical Modeling of Reconfigurable Transistors. 23. Flexi- Grid Technology: A necessity for Spectral Resource Utilization. |
| Umfang: | xviii, 391 Seiten Illustrationen, Diagramme 254 mm |
| ISBN: | 9780367648091 9780367648107 |
Internformat
MARC
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| 245 | 1 | 0 | |a Sub-micron semiconductor devices |b design and applications |c edited by Ashish, Deep Shekhar, and Naveen Kumar |
| 250 | |a Frist edition | ||
| 264 | 1 | |a Boca Raton ; London ; New York |b CRC Press, Taylor & Francis Group |c 2022 | |
| 300 | |a xviii, 391 Seiten |b Illustrationen, Diagramme |c 254 mm | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a 1. Fundamental Phenomena in Nano scale Semiconductor Devices. 2. Recent Advancements in Growth and Stability of Phosphorene- Prospects for High-Performance Devices. 3. Study of Transition Metal Dichalcogenides in Junctionless Transistors and Effect of Variation in Dielectric Oxide. 4. GNRFET Based Ternary Repeaters: Prospects and Potential Implementation for Efficient GNR Interconnects. 5. An Effective Study on Particulate Matter (PM) Removal Using Graphene Filter. 6. Recent trends in Fabrication of Graphene-Based Devices for Detection of Heavy Metal Ions in Water. 7. Vertical Tunnel FET having Dual MOSCAP Geometry. 8. Leakage Current and Capacitance reduction in CMOS Technology. 9. Design of SiGe sourced Gate-All-Around TFET with Gate-On-Source for Enhanced Analog Performance. 10. Solving Schrodinger’s Equation for Low Dimensional Nanostructures for Understanding Quantum Confinement Effects.11. Simulation of Reconfigurable FET circuits using Sentaurus TCAD Tool. 12. | ||
| 500 | |a - NEGF Method for Design and Simulation Analysis of Nano-Scale MOS Devices. 13. Performance investigation of a novel Si/Ge heterojunction Asymmetric DoubleGate Doping Less Tunnel Field Effect Transistor for low-power analog/RF and IoT Applications. 14. Synthesis of Graphene Nanocomposites toward the Enhancement of Energy Storage Performance for Supercapacitors. 15. Design and Analysis of Dopingless Charge Plasma Based Ring Architecture of Tunnel Field Effect Transistor for Low Power Application. 16. Hybrid Intelligent Technique Based Doping Profile Optimization in a Double Gate Heter-Dielectric TFET. 17. Graphene Nanoribbon Devices: Advances in Fabrication And Applications. 18. Design and Analysis of Various Neural Preamplifier Circuits. 19. Design and Analysis of Transition Metal Dichalcogenides Based Feedback Transistor. 20. Reduced Graphene-Metal Phthalocyanine Based Nanohybrids for Gas Sensing Applications. 21. | ||
| 500 | |a - Phosphorene Multigate Field-Effect Transistors for High-Frequency Applications. 22. Analytical Modeling of Reconfigurable Transistors. 23. Flexi- Grid Technology: A necessity for Spectral Resource Utilization. | ||
| 520 | |a This comprehensive reference text discusses novel semiconductor devices including nanostructure field effect transistor, photodiodes, high-electron-mobility transistor, and oxide-based devices. The text covers sub-micron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devises, optimization techniques and application in detail. It covers important topics including negative capacitance devices, surface-plasmon resonance devices, fermi-level pinning, external stimuli-based optimization techniques, optoelectronic devices, and architecture-based optimization techniques.The book• covers novel semiconductor devices with sub-micron dimensions.• discusses comprehensive device optimization techniques.• examines conceptualization and modeling of the semiconductor devices.• covers circuit and sensor-based application of the novel devices.• discusses novel materials for next generation devices.The text will be useful for graduate students and professionals in the fields including electrical engineering, electronics and communication engineering, materials science, and nanoscience | ||
| 650 | 4 | |a bisacsh | |
| 650 | 4 | |a bisacsh | |
| 650 | 4 | |a bisacsh | |
| 700 | 1 | |a Raman, Ashish |4 edt | |
| 700 | 1 | |a Shekhar, Deep |4 edt | |
| 700 | 1 | |a Kumar, Naveen |4 edt | |
| 776 | 0 | 8 | |i Erscheint auch als |n Online-Ausgabe |z 978-1-003-12639-3 |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-033337656 | |
Datensatz im Suchindex
| _version_ | 1818989121156153344 |
|---|---|
| any_adam_object | |
| author2 | Raman, Ashish Shekhar, Deep Kumar, Naveen |
| author2_role | edt edt edt |
| author2_variant | a r ar d s ds n k nk |
| author_facet | Raman, Ashish Shekhar, Deep Kumar, Naveen |
| building | Verbundindex |
| bvnumber | BV047956376 |
| ctrlnum | (OCoLC)1315745526 (DE-599)BVBBV047956376 |
| edition | Frist edition |
| format | Book |
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| id | DE-604.BV047956376 |
| illustrated | Illustrated |
| indexdate | 2024-12-20T19:33:26Z |
| institution | BVB |
| isbn | 9780367648091 9780367648107 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-033337656 |
| oclc_num | 1315745526 |
| open_access_boolean | |
| owner | DE-29T |
| owner_facet | DE-29T |
| physical | xviii, 391 Seiten Illustrationen, Diagramme 254 mm |
| publishDate | 2022 |
| publishDateSearch | 2022 |
| publishDateSort | 2022 |
| publisher | CRC Press, Taylor & Francis Group |
| record_format | marc |
| spelling | Sub-micron semiconductor devices design and applications edited by Ashish, Deep Shekhar, and Naveen Kumar Frist edition Boca Raton ; London ; New York CRC Press, Taylor & Francis Group 2022 xviii, 391 Seiten Illustrationen, Diagramme 254 mm txt rdacontent n rdamedia nc rdacarrier 1. Fundamental Phenomena in Nano scale Semiconductor Devices. 2. Recent Advancements in Growth and Stability of Phosphorene- Prospects for High-Performance Devices. 3. Study of Transition Metal Dichalcogenides in Junctionless Transistors and Effect of Variation in Dielectric Oxide. 4. GNRFET Based Ternary Repeaters: Prospects and Potential Implementation for Efficient GNR Interconnects. 5. An Effective Study on Particulate Matter (PM) Removal Using Graphene Filter. 6. Recent trends in Fabrication of Graphene-Based Devices for Detection of Heavy Metal Ions in Water. 7. Vertical Tunnel FET having Dual MOSCAP Geometry. 8. Leakage Current and Capacitance reduction in CMOS Technology. 9. Design of SiGe sourced Gate-All-Around TFET with Gate-On-Source for Enhanced Analog Performance. 10. Solving Schrodinger’s Equation for Low Dimensional Nanostructures for Understanding Quantum Confinement Effects.11. Simulation of Reconfigurable FET circuits using Sentaurus TCAD Tool. 12. - NEGF Method for Design and Simulation Analysis of Nano-Scale MOS Devices. 13. Performance investigation of a novel Si/Ge heterojunction Asymmetric DoubleGate Doping Less Tunnel Field Effect Transistor for low-power analog/RF and IoT Applications. 14. Synthesis of Graphene Nanocomposites toward the Enhancement of Energy Storage Performance for Supercapacitors. 15. Design and Analysis of Dopingless Charge Plasma Based Ring Architecture of Tunnel Field Effect Transistor for Low Power Application. 16. Hybrid Intelligent Technique Based Doping Profile Optimization in a Double Gate Heter-Dielectric TFET. 17. Graphene Nanoribbon Devices: Advances in Fabrication And Applications. 18. Design and Analysis of Various Neural Preamplifier Circuits. 19. Design and Analysis of Transition Metal Dichalcogenides Based Feedback Transistor. 20. Reduced Graphene-Metal Phthalocyanine Based Nanohybrids for Gas Sensing Applications. 21. - Phosphorene Multigate Field-Effect Transistors for High-Frequency Applications. 22. Analytical Modeling of Reconfigurable Transistors. 23. Flexi- Grid Technology: A necessity for Spectral Resource Utilization. This comprehensive reference text discusses novel semiconductor devices including nanostructure field effect transistor, photodiodes, high-electron-mobility transistor, and oxide-based devices. The text covers sub-micron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devises, optimization techniques and application in detail. It covers important topics including negative capacitance devices, surface-plasmon resonance devices, fermi-level pinning, external stimuli-based optimization techniques, optoelectronic devices, and architecture-based optimization techniques.The book• covers novel semiconductor devices with sub-micron dimensions.• discusses comprehensive device optimization techniques.• examines conceptualization and modeling of the semiconductor devices.• covers circuit and sensor-based application of the novel devices.• discusses novel materials for next generation devices.The text will be useful for graduate students and professionals in the fields including electrical engineering, electronics and communication engineering, materials science, and nanoscience bisacsh Raman, Ashish edt Shekhar, Deep edt Kumar, Naveen edt Erscheint auch als Online-Ausgabe 978-1-003-12639-3 |
| spellingShingle | Sub-micron semiconductor devices design and applications bisacsh |
| title | Sub-micron semiconductor devices design and applications |
| title_auth | Sub-micron semiconductor devices design and applications |
| title_exact_search | Sub-micron semiconductor devices design and applications |
| title_full | Sub-micron semiconductor devices design and applications edited by Ashish, Deep Shekhar, and Naveen Kumar |
| title_fullStr | Sub-micron semiconductor devices design and applications edited by Ashish, Deep Shekhar, and Naveen Kumar |
| title_full_unstemmed | Sub-micron semiconductor devices design and applications edited by Ashish, Deep Shekhar, and Naveen Kumar |
| title_short | Sub-micron semiconductor devices |
| title_sort | sub micron semiconductor devices design and applications |
| title_sub | design and applications |
| topic | bisacsh |
| topic_facet | bisacsh |
| work_keys_str_mv | AT ramanashish submicronsemiconductordevicesdesignandapplications AT shekhardeep submicronsemiconductordevicesdesignandapplications AT kumarnaveen submicronsemiconductordevicesdesignandapplications |