Incorporating Variability of Resistive RAM in Circuit Simulations using the Stanford–PKU Model:
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| Main Authors: | , , |
|---|---|
| Format: | Electronic Conference Proceedings eBook |
| Language: | English |
| Published: |
Erlangen ; Nürnberg
Friedrich-Alexander-Universität Erlangen-Nürnberg
2020
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| Edition: | Preprint |
| Subjects: | |
| Links: | https://nbn-resolving.org/urn:nbn:de:bvb:29-opus4-140533 https://d-nb.info/1213533392/34 https://open.fau.de/handle/openfau/14053 |
| Physical Description: | 1 Online-Ressource |
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Record in the Search Index
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| indexdate | 2024-12-20T19:01:41Z |
| institution | BVB |
| language | English |
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| publisher | Friedrich-Alexander-Universität Erlangen-Nürnberg |
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| spelling | Reuben, John Verfasser aut Incorporating Variability of Resistive RAM in Circuit Simulations using the Stanford–PKU Model John Reuben, Mehrdad Biglari, Dietmar Fey ; IEEE Preprint Erlangen ; Nürnberg Friedrich-Alexander-Universität Erlangen-Nürnberg 2020 1 Online-Ressource txt rdacontent c rdamedia cr rdacarrier Archivierung/Langzeitarchivierung gewährleistet DE-101 pdager Resistive RAM (RRAM), physics-based models, cycle-to-cycle variability, device-to-device variability, Stanford model, memristor, sense amplifier, resistive-switching, 1T-1R Biglari, Mehrdad Verfasser aut Fey, Dietmar Verfasser aut IEEE Sonstige oth Sonderdruck aus IEEE Transactions on Nanotechnology 19 (2020), Seite 508 - 518 10.1109/TNANO.2020.3004666 https://nbn-resolving.org/urn:nbn:de:bvb:29-opus4-140533 Resolving-System kostenfrei Volltext https://d-nb.info/1213533392/34 Langzeitarchivierung Nationalbibliothek kostenfrei Volltext application/pdf https://open.fau.de/handle/openfau/14053 Verlag kostenfrei Volltext |
| spellingShingle | Reuben, John Biglari, Mehrdad Fey, Dietmar Incorporating Variability of Resistive RAM in Circuit Simulations using the Stanford–PKU Model |
| title | Incorporating Variability of Resistive RAM in Circuit Simulations using the Stanford–PKU Model |
| title_auth | Incorporating Variability of Resistive RAM in Circuit Simulations using the Stanford–PKU Model |
| title_exact_search | Incorporating Variability of Resistive RAM in Circuit Simulations using the Stanford–PKU Model |
| title_full | Incorporating Variability of Resistive RAM in Circuit Simulations using the Stanford–PKU Model John Reuben, Mehrdad Biglari, Dietmar Fey ; IEEE |
| title_fullStr | Incorporating Variability of Resistive RAM in Circuit Simulations using the Stanford–PKU Model John Reuben, Mehrdad Biglari, Dietmar Fey ; IEEE |
| title_full_unstemmed | Incorporating Variability of Resistive RAM in Circuit Simulations using the Stanford–PKU Model John Reuben, Mehrdad Biglari, Dietmar Fey ; IEEE |
| title_short | Incorporating Variability of Resistive RAM in Circuit Simulations using the Stanford–PKU Model |
| title_sort | incorporating variability of resistive ram in circuit simulations using the stanford pku model |
| url | https://nbn-resolving.org/urn:nbn:de:bvb:29-opus4-140533 https://d-nb.info/1213533392/34 https://open.fau.de/handle/openfau/14053 |
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