Incorporating Variability of Resistive RAM in Circuit Simulations using the Stanford–PKU Model:
Gespeichert in:
| Beteiligte Personen: | , , |
|---|---|
| Format: | Elektronisch Tagungsbericht E-Book |
| Sprache: | Englisch |
| Veröffentlicht: |
Erlangen ; Nürnberg
Friedrich-Alexander-Universität Erlangen-Nürnberg
2020
|
| Ausgabe: | Preprint |
| Schlagwörter: | |
| Links: | https://nbn-resolving.org/urn:nbn:de:bvb:29-opus4-140533 https://d-nb.info/1213533392/34 https://open.fau.de/handle/openfau/14053 |
| Umfang: | 1 Online-Ressource |
Internformat
MARC
| LEADER | 00000nam a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV046812013 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 200717s2020 gw o|||| 00||| eng d | ||
| 015 | |a 20,O08 |2 dnb | ||
| 016 | 7 | |a 1213533392 |2 DE-101 | |
| 024 | 7 | |a 10.1109/TNANO.2020.3004666 |2 doi | |
| 024 | 7 | |a urn:nbn:de:bvb:29-opus4-140533 |2 urn | |
| 035 | |a (OCoLC)1190915768 | ||
| 035 | |a (DE-599)DNB1213533392 | ||
| 040 | |a DE-604 |b ger |e rda | ||
| 041 | 0 | |a eng | |
| 044 | |a gw |c XA-DE-BY | ||
| 049 | |a DE-29 | ||
| 084 | |a 530.4175 |2 sdnb | ||
| 084 | |a 530 |2 sdnb | ||
| 100 | 1 | |a Reuben, John |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Incorporating Variability of Resistive RAM in Circuit Simulations using the Stanford–PKU Model |c John Reuben, Mehrdad Biglari, Dietmar Fey ; IEEE |
| 250 | |a Preprint | ||
| 264 | 1 | |a Erlangen ; Nürnberg |b Friedrich-Alexander-Universität Erlangen-Nürnberg |c 2020 | |
| 300 | |a 1 Online-Ressource | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 583 | 1 | |a Archivierung/Langzeitarchivierung gewährleistet |5 DE-101 |2 pdager | |
| 653 | |a Resistive RAM (RRAM), physics-based models, cycle-to-cycle variability, device-to-device variability, Stanford model, memristor, sense amplifier, resistive-switching, 1T-1R | ||
| 700 | 1 | |a Biglari, Mehrdad |e Verfasser |4 aut | |
| 700 | 1 | |a Fey, Dietmar |e Verfasser |4 aut | |
| 711 | 2 | |a IEEE |a Sonstige |4 oth | |
| 787 | 0 | 8 | |i Sonderdruck aus |t IEEE Transactions on Nanotechnology |g 19 (2020), Seite 508 - 518 |o 10.1109/TNANO.2020.3004666 |
| 856 | 4 | 0 | |u https://nbn-resolving.org/urn:nbn:de:bvb:29-opus4-140533 |x Resolving-System |z kostenfrei |3 Volltext |
| 856 | 4 | 0 | |u https://d-nb.info/1213533392/34 |x Langzeitarchivierung Nationalbibliothek |z kostenfrei |3 Volltext |
| 856 | 4 | 0 | |q application/pdf |u https://open.fau.de/handle/openfau/14053 |x Verlag |z kostenfrei |3 Volltext |
| 912 | |a ebook | ||
| 347 | |b PDF | ||
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-032220549 | |
Datensatz im Suchindex
| _version_ | 1818987123110313984 |
|---|---|
| any_adam_object | |
| author | Reuben, John Biglari, Mehrdad Fey, Dietmar |
| author_facet | Reuben, John Biglari, Mehrdad Fey, Dietmar |
| author_role | aut aut aut |
| author_sort | Reuben, John |
| author_variant | j r jr m b mb d f df |
| building | Verbundindex |
| bvnumber | BV046812013 |
| collection | ebook |
| ctrlnum | (OCoLC)1190915768 (DE-599)DNB1213533392 |
| discipline | Physik |
| edition | Preprint |
| format | Electronic Conference Proceeding eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01977nam a2200469zc 4500</leader><controlfield tag="001">BV046812013</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">200717s2020 gw o|||| 00||| eng d</controlfield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">20,O08</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">1213533392</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1109/TNANO.2020.3004666</subfield><subfield code="2">doi</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">urn:nbn:de:bvb:29-opus4-140533</subfield><subfield code="2">urn</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)1190915768</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DNB1213533392</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">XA-DE-BY</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-29</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">530.4175</subfield><subfield code="2">sdnb</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">530</subfield><subfield code="2">sdnb</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Reuben, John</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Incorporating Variability of Resistive RAM in Circuit Simulations using the Stanford–PKU Model</subfield><subfield code="c">John Reuben, Mehrdad Biglari, Dietmar Fey ; IEEE</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">Preprint</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Erlangen ; Nürnberg</subfield><subfield code="b">Friedrich-Alexander-Universität Erlangen-Nürnberg</subfield><subfield code="c">2020</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="583" ind1="1" ind2=" "><subfield code="a">Archivierung/Langzeitarchivierung gewährleistet</subfield><subfield code="5">DE-101</subfield><subfield code="2">pdager</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Resistive RAM (RRAM), physics-based models, cycle-to-cycle variability, device-to-device variability, Stanford model, memristor, sense amplifier, resistive-switching, 1T-1R</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Biglari, Mehrdad</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Fey, Dietmar</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="711" ind1="2" ind2=" "><subfield code="a">IEEE</subfield><subfield code="a">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="787" ind1="0" ind2="8"><subfield code="i">Sonderdruck aus</subfield><subfield code="t">IEEE Transactions on Nanotechnology</subfield><subfield code="g">19 (2020), Seite 508 - 518</subfield><subfield code="o">10.1109/TNANO.2020.3004666</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://nbn-resolving.org/urn:nbn:de:bvb:29-opus4-140533</subfield><subfield code="x">Resolving-System</subfield><subfield code="z">kostenfrei</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://d-nb.info/1213533392/34</subfield><subfield code="x">Langzeitarchivierung Nationalbibliothek</subfield><subfield code="z">kostenfrei</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="q">application/pdf</subfield><subfield code="u">https://open.fau.de/handle/openfau/14053</subfield><subfield code="x">Verlag</subfield><subfield code="z">kostenfrei</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ebook</subfield></datafield><datafield tag="347" ind1=" " ind2=" "><subfield code="b">PDF</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-032220549</subfield></datafield></record></collection> |
| id | DE-604.BV046812013 |
| illustrated | Not Illustrated |
| indexdate | 2024-12-20T19:01:41Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-032220549 |
| oclc_num | 1190915768 |
| open_access_boolean | 1 |
| owner | DE-29 |
| owner_facet | DE-29 |
| physical | 1 Online-Ressource |
| psigel | ebook |
| publishDate | 2020 |
| publishDateSearch | 2020 |
| publishDateSort | 2020 |
| publisher | Friedrich-Alexander-Universität Erlangen-Nürnberg |
| record_format | marc |
| spelling | Reuben, John Verfasser aut Incorporating Variability of Resistive RAM in Circuit Simulations using the Stanford–PKU Model John Reuben, Mehrdad Biglari, Dietmar Fey ; IEEE Preprint Erlangen ; Nürnberg Friedrich-Alexander-Universität Erlangen-Nürnberg 2020 1 Online-Ressource txt rdacontent c rdamedia cr rdacarrier Archivierung/Langzeitarchivierung gewährleistet DE-101 pdager Resistive RAM (RRAM), physics-based models, cycle-to-cycle variability, device-to-device variability, Stanford model, memristor, sense amplifier, resistive-switching, 1T-1R Biglari, Mehrdad Verfasser aut Fey, Dietmar Verfasser aut IEEE Sonstige oth Sonderdruck aus IEEE Transactions on Nanotechnology 19 (2020), Seite 508 - 518 10.1109/TNANO.2020.3004666 https://nbn-resolving.org/urn:nbn:de:bvb:29-opus4-140533 Resolving-System kostenfrei Volltext https://d-nb.info/1213533392/34 Langzeitarchivierung Nationalbibliothek kostenfrei Volltext application/pdf https://open.fau.de/handle/openfau/14053 Verlag kostenfrei Volltext |
| spellingShingle | Reuben, John Biglari, Mehrdad Fey, Dietmar Incorporating Variability of Resistive RAM in Circuit Simulations using the Stanford–PKU Model |
| title | Incorporating Variability of Resistive RAM in Circuit Simulations using the Stanford–PKU Model |
| title_auth | Incorporating Variability of Resistive RAM in Circuit Simulations using the Stanford–PKU Model |
| title_exact_search | Incorporating Variability of Resistive RAM in Circuit Simulations using the Stanford–PKU Model |
| title_full | Incorporating Variability of Resistive RAM in Circuit Simulations using the Stanford–PKU Model John Reuben, Mehrdad Biglari, Dietmar Fey ; IEEE |
| title_fullStr | Incorporating Variability of Resistive RAM in Circuit Simulations using the Stanford–PKU Model John Reuben, Mehrdad Biglari, Dietmar Fey ; IEEE |
| title_full_unstemmed | Incorporating Variability of Resistive RAM in Circuit Simulations using the Stanford–PKU Model John Reuben, Mehrdad Biglari, Dietmar Fey ; IEEE |
| title_short | Incorporating Variability of Resistive RAM in Circuit Simulations using the Stanford–PKU Model |
| title_sort | incorporating variability of resistive ram in circuit simulations using the stanford pku model |
| url | https://nbn-resolving.org/urn:nbn:de:bvb:29-opus4-140533 https://d-nb.info/1213533392/34 https://open.fau.de/handle/openfau/14053 |
| work_keys_str_mv | AT reubenjohn incorporatingvariabilityofresistiveramincircuitsimulationsusingthestanfordpkumodel AT biglarimehrdad incorporatingvariabilityofresistiveramincircuitsimulationsusingthestanfordpkumodel AT feydietmar incorporatingvariabilityofresistiveramincircuitsimulationsusingthestanfordpkumodel AT ieeesonstige incorporatingvariabilityofresistiveramincircuitsimulationsusingthestanfordpkumodel |