Nitride Semiconductors and Devices:
A View of the Past, and a Look into the Future by a Pioneer By Jacques I. Pankove This forword will be a brief review of important developments in the early and recent history of gallium nitride, and also a perspective on the current and future evolution of this exciting field. Gallium nitride (GaN)...
Gespeichert in:
| Beteilige Person: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | Englisch |
| Veröffentlicht: |
Berlin, Heidelberg
Springer Berlin Heidelberg
1999
|
| Schriftenreihe: | Springer Series in Materials Science
32 |
| Schlagwörter: | |
| Links: | https://doi.org/10.1007/978-3-642-58562-3 https://doi.org/10.1007/978-3-642-58562-3 |
| Zusammenfassung: | A View of the Past, and a Look into the Future by a Pioneer By Jacques I. Pankove This forword will be a brief review of important developments in the early and recent history of gallium nitride, and also a perspective on the current and future evolution of this exciting field. Gallium nitride (GaN) was syn thesized more than 50 years ago by Johnson et al. [1] in 1932, and also by Juza and Hahn [2] in 1938, who passed ammonia over hot gallium. This method produced small needles and platelets. The purpose of Juza and Hahn was to investiagte the crystal structure and lattice constant of GaN as part of a systematic study of many compounds. Two decades later, Grim al. [3] in 1959 employed the same technique to produce small cry meiss et stals of GaN for the purpose of measuring their photoluminescence spectra. Another decade later Maruska and Tietjen [4] in 1969 used a chloride trans port vapor technique to make a large-area layer of GaN on sapphire. All of the GaN made at that time was very conducting n-type even when not deli berately doped. The donors were believed to be nitrogen vacancies. Later this model was questioned by Seifert et al. [5] in 1983, and oxygen was pro as the donor. Oxygen with its 6 valence electrons on a N site (N has 5 posed valence electrons) would be a single donor |
| Umfang: | 1 Online-Ressource (XXIV, 489 p) |
| ISBN: | 9783642585623 |
| DOI: | 10.1007/978-3-642-58562-3 |
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| id | DE-604.BV045186011 |
| illustrated | Not Illustrated |
| indexdate | 2024-12-20T18:20:10Z |
| institution | BVB |
| isbn | 9783642585623 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030575189 |
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| physical | 1 Online-Ressource (XXIV, 489 p) |
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| spelling | Morkoç, Hadis Verfasser aut Nitride Semiconductors and Devices by Hadis Morkoç Berlin, Heidelberg Springer Berlin Heidelberg 1999 1 Online-Ressource (XXIV, 489 p) txt rdacontent c rdamedia cr rdacarrier Springer Series in Materials Science 32 A View of the Past, and a Look into the Future by a Pioneer By Jacques I. Pankove This forword will be a brief review of important developments in the early and recent history of gallium nitride, and also a perspective on the current and future evolution of this exciting field. Gallium nitride (GaN) was syn thesized more than 50 years ago by Johnson et al. [1] in 1932, and also by Juza and Hahn [2] in 1938, who passed ammonia over hot gallium. This method produced small needles and platelets. The purpose of Juza and Hahn was to investiagte the crystal structure and lattice constant of GaN as part of a systematic study of many compounds. Two decades later, Grim al. [3] in 1959 employed the same technique to produce small cry meiss et stals of GaN for the purpose of measuring their photoluminescence spectra. Another decade later Maruska and Tietjen [4] in 1969 used a chloride trans port vapor technique to make a large-area layer of GaN on sapphire. All of the GaN made at that time was very conducting n-type even when not deli berately doped. The donors were believed to be nitrogen vacancies. Later this model was questioned by Seifert et al. [5] in 1983, and oxygen was pro as the donor. Oxygen with its 6 valence electrons on a N site (N has 5 posed valence electrons) would be a single donor Electronics and Microelectronics, Instrumentation Optical and Electronic Materials Electronics Optical materials Lumineszenzdiode (DE-588)4125154-4 gnd rswk-swf Verbindungshalbleiter (DE-588)4062623-4 gnd rswk-swf Halbleiterlaser (DE-588)4139556-6 gnd rswk-swf Nitride (DE-588)4171929-3 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 s Halbleiterlaser (DE-588)4139556-6 s DE-604 Lumineszenzdiode (DE-588)4125154-4 s Nitride (DE-588)4171929-3 s Verbindungshalbleiter (DE-588)4062623-4 s Erscheint auch als Druck-Ausgabe 9783642636479 Erscheint auch als Druck-Ausgabe 9783540640387 Erscheint auch als Druck-Ausgabe 9783642585630 https://doi.org/10.1007/978-3-642-58562-3 Verlag URL des Erstveröffentlichers Volltext |
| spellingShingle | Morkoç, Hadis Nitride Semiconductors and Devices Electronics and Microelectronics, Instrumentation Optical and Electronic Materials Electronics Optical materials Lumineszenzdiode (DE-588)4125154-4 gnd Verbindungshalbleiter (DE-588)4062623-4 gnd Halbleiterlaser (DE-588)4139556-6 gnd Nitride (DE-588)4171929-3 gnd Galliumnitrid (DE-588)4375592-6 gnd |
| subject_GND | (DE-588)4125154-4 (DE-588)4062623-4 (DE-588)4139556-6 (DE-588)4171929-3 (DE-588)4375592-6 |
| title | Nitride Semiconductors and Devices |
| title_auth | Nitride Semiconductors and Devices |
| title_exact_search | Nitride Semiconductors and Devices |
| title_full | Nitride Semiconductors and Devices by Hadis Morkoç |
| title_fullStr | Nitride Semiconductors and Devices by Hadis Morkoç |
| title_full_unstemmed | Nitride Semiconductors and Devices by Hadis Morkoç |
| title_short | Nitride Semiconductors and Devices |
| title_sort | nitride semiconductors and devices |
| topic | Electronics and Microelectronics, Instrumentation Optical and Electronic Materials Electronics Optical materials Lumineszenzdiode (DE-588)4125154-4 gnd Verbindungshalbleiter (DE-588)4062623-4 gnd Halbleiterlaser (DE-588)4139556-6 gnd Nitride (DE-588)4171929-3 gnd Galliumnitrid (DE-588)4375592-6 gnd |
| topic_facet | Electronics and Microelectronics, Instrumentation Optical and Electronic Materials Electronics Optical materials Lumineszenzdiode Verbindungshalbleiter Halbleiterlaser Nitride Galliumnitrid |
| url | https://doi.org/10.1007/978-3-642-58562-3 |
| work_keys_str_mv | AT morkochadis nitridesemiconductorsanddevices |