Nonlinear transistor model parameter extraction techniques:

Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty...

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Bibliographic Details
Other Authors: Rudolph, Matthias 1969- (Editor), Fager, Christian (Editor), Root, David E. (Editor)
Format: Electronic eBook
Language:English
Published: Cambridge Cambridge University Press 2012
Series:The Cambridge RF and microwave engineering series
Subjects:
Links:https://doi.org/10.1017/CBO9781139014960
https://doi.org/10.1017/CBO9781139014960
https://doi.org/10.1017/CBO9781139014960
Summary:Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction
Item Description:Title from publisher's bibliographic system (viewed on 05 Oct 2015)
Physical Description:1 online resource (xiv, 352 pages)
ISBN:9781139014960
DOI:10.1017/CBO9781139014960