Threshold Voltage Engineering of GaN-based n-Channel and p-Channel Heterostructure Field Effect Transistors:
Gespeichert in:
| Beteilige Person: | |
|---|---|
| Format: | Hochschulschrift/Dissertation Buch |
| Sprache: | Englisch |
| Veröffentlicht: |
München
Dr. Hut
2015
|
| Ausgabe: | 1. Aufl. |
| Schriftenreihe: | Elektrotechnik
|
| Schlagwörter: | |
| Links: | http://deposit.dnb.de/cgi-bin/dokserv?id=5146225&prov=M&dok_var=1&dok_ext=htm |
| Umfang: | 178 S. graph. Darst. 210 mm x 148 mm, 370 g |
| ISBN: | 9783843919241 3843919240 |
Internformat
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Datensatz im Suchindex
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|---|---|
| DE-BY-TUM_katkey | 2106731 |
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| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | 1. Aufl. |
| format | Thesis Book |
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| genre_facet | Hochschulschrift |
| id | DE-604.BV042472302 |
| illustrated | Illustrated |
| indexdate | 2024-12-20T17:12:15Z |
| institution | BVB |
| isbn | 9783843919241 3843919240 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027907439 |
| oclc_num | 906862716 |
| open_access_boolean | |
| owner | DE-12 DE-91 DE-BY-TUM DE-29T |
| owner_facet | DE-12 DE-91 DE-BY-TUM DE-29T |
| physical | 178 S. graph. Darst. 210 mm x 148 mm, 370 g |
| publishDate | 2015 |
| publishDateSearch | 2015 |
| publishDateSort | 2015 |
| publisher | Dr. Hut |
| record_format | marc |
| series2 | Elektrotechnik |
| spellingShingle | Hahn, Herwig Threshold Voltage Engineering of GaN-based n-Channel and p-Channel Heterostructure Field Effect Transistors |
| subject_GND | (DE-588)4113937-9 |
| title | Threshold Voltage Engineering of GaN-based n-Channel and p-Channel Heterostructure Field Effect Transistors |
| title_auth | Threshold Voltage Engineering of GaN-based n-Channel and p-Channel Heterostructure Field Effect Transistors |
| title_exact_search | Threshold Voltage Engineering of GaN-based n-Channel and p-Channel Heterostructure Field Effect Transistors |
| title_full | Threshold Voltage Engineering of GaN-based n-Channel and p-Channel Heterostructure Field Effect Transistors Herwig Hahn |
| title_fullStr | Threshold Voltage Engineering of GaN-based n-Channel and p-Channel Heterostructure Field Effect Transistors Herwig Hahn |
| title_full_unstemmed | Threshold Voltage Engineering of GaN-based n-Channel and p-Channel Heterostructure Field Effect Transistors Herwig Hahn |
| title_short | Threshold Voltage Engineering of GaN-based n-Channel and p-Channel Heterostructure Field Effect Transistors |
| title_sort | threshold voltage engineering of gan based n channel and p channel heterostructure field effect transistors |
| topic_facet | Hochschulschrift |
| url | http://deposit.dnb.de/cgi-bin/dokserv?id=5146225&prov=M&dok_var=1&dok_ext=htm |
| work_keys_str_mv | AT hahnherwig thresholdvoltageengineeringofganbasednchannelandpchannelheterostructurefieldeffecttransistors |
Paper/Kapitel scannen lassen
Bibliotheksmagazin
| Signatur: |
0001 2015 A 1996
Lageplan |
|---|---|
| Exemplar 1 | Ausleihbar Am Standort |