Three-Dimensional Simulation of Semiconductor Devices:
Saved in:
| Main Author: | |
|---|---|
| Format: | Electronic eBook |
| Language: | German |
| Published: |
Basel
Birkhäuser Basel
1991
|
| Series: | Progress in Numerical Simulation for Microelectronics
1 |
| Subjects: | |
| Links: | https://doi.org/10.1007/978-3-0348-7731-2 |
| Item Description: | The three-dimensional device simulation has become a necessary tool for the design and investigation of complex device structures. The evolution of the three-dimensional simulation tools is directly linked to the scaling of the devices and the increasing complexity of dynamic random access memory (DRAM) cells. Scaling of MOSFET devices led to a three-dimensional geometry with effects which cannot be handled by two-dimensional simulations anymore. With increasing integration density in DRAMs the third dimen sion had to be utilized to realize the storage capacitor. The resulting leakage problems have to be investigated and the cell design optimized by means of three-dimensional simulations. This book is intended for senior undergraduate students in applied physics, electrical engineering and computational physics, as well as for scientists and engineers involved in semiconductor device research and development. It is also intended for software engineers and all those who are concerned with simulation. The book will give an overview on the problems and activities concerning three-dimensional device simulation, without the claim of being a classical textbook. It starts from the classical semiconductor equations, discusses the physical models used in device simulation, describes the discretization and some numerical methods for solving the differential equations. The application of the threedimensional simulation to VLSI device engineering is illustrated by a few specific examples |
| Physical Description: | 1 Online-Ressource (124 S.) |
| ISBN: | 9783034877312 9783034877329 |
| DOI: | 10.1007/978-3-0348-7731-2 |
Staff View
MARC
| LEADER | 00000nam a2200000zcb4500 | ||
|---|---|---|---|
| 001 | BV042443582 | ||
| 003 | DE-604 | ||
| 005 | 20170925 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 150324s1991 xx o|||| 00||| ger d | ||
| 020 | |a 9783034877312 |c Online |9 978-3-0348-7731-2 | ||
| 020 | |a 9783034877329 |c Print |9 978-3-0348-7732-9 | ||
| 024 | 7 | |a 10.1007/978-3-0348-7731-2 |2 doi | |
| 035 | |a (OCoLC)863885504 | ||
| 035 | |a (DE-599)BVBBV042443582 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a ger | |
| 049 | |a DE-91 |a DE-634 |a DE-92 |a DE-706 | ||
| 082 | 0 | |a 50 |2 23 | |
| 084 | |a NAT 000 |2 stub | ||
| 100 | 1 | |a Kircher, Roland |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Three-Dimensional Simulation of Semiconductor Devices |c von Roland Kircher, Wolfgang Bergner |
| 264 | 1 | |a Basel |b Birkhäuser Basel |c 1991 | |
| 300 | |a 1 Online-Ressource (124 S.) | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 1 | |a Progress in Numerical Simulation for Microelectronics |v 1 | |
| 500 | |a The three-dimensional device simulation has become a necessary tool for the design and investigation of complex device structures. The evolution of the three-dimensional simulation tools is directly linked to the scaling of the devices and the increasing complexity of dynamic random access memory (DRAM) cells. Scaling of MOSFET devices led to a three-dimensional geometry with effects which cannot be handled by two-dimensional simulations anymore. With increasing integration density in DRAMs the third dimen sion had to be utilized to realize the storage capacitor. The resulting leakage problems have to be investigated and the cell design optimized by means of three-dimensional simulations. This book is intended for senior undergraduate students in applied physics, electrical engineering and computational physics, as well as for scientists and engineers involved in semiconductor device research and development. It is also intended for software engineers and all those who are concerned with simulation. The book will give an overview on the problems and activities concerning three-dimensional device simulation, without the claim of being a classical textbook. It starts from the classical semiconductor equations, discusses the physical models used in device simulation, describes the discretization and some numerical methods for solving the differential equations. The application of the threedimensional simulation to VLSI device engineering is illustrated by a few specific examples | ||
| 650 | 4 | |a Science (General) | |
| 650 | 4 | |a Science, general | |
| 650 | 4 | |a Naturwissenschaft | |
| 650 | 0 | 7 | |a Halbleiterschaltung |0 (DE-588)4158811-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Simulation |0 (DE-588)4055072-2 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |D s |
| 689 | 0 | 1 | |a Simulation |0 (DE-588)4055072-2 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 689 | 1 | 0 | |a Halbleiterschaltung |0 (DE-588)4158811-3 |D s |
| 689 | 1 | 1 | |a Simulation |0 (DE-588)4055072-2 |D s |
| 689 | 1 | |8 2\p |5 DE-604 | |
| 700 | 1 | |a Bergner, Wolfgang |e Sonstige |4 oth | |
| 830 | 0 | |a Progress in Numerical Simulation for Microelectronics |v 1 |w (DE-604)BV004586845 |9 1 | |
| 856 | 4 | 0 | |u https://doi.org/10.1007/978-3-0348-7731-2 |x Verlag |3 Volltext |
| 912 | |a ZDB-2-SNA | ||
| 912 | |a ZDB-2-BAD | ||
| 940 | 1 | |q ZDB-2-SNA_Archive | |
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 2\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-027878829 | |
Record in the Search Index
| DE-BY-TUM_katkey | 2083369 |
|---|---|
| _version_ | 1821931611851063296 |
| any_adam_object | |
| author | Kircher, Roland |
| author_facet | Kircher, Roland |
| author_role | aut |
| author_sort | Kircher, Roland |
| author_variant | r k rk |
| building | Verbundindex |
| bvnumber | BV042443582 |
| classification_tum | NAT 000 |
| collection | ZDB-2-SNA ZDB-2-BAD |
| ctrlnum | (OCoLC)863885504 (DE-599)BVBBV042443582 |
| dewey-full | 50 |
| dewey-hundreds | 000 - Computer science, information, general works |
| dewey-ones | 050 - General serial publications |
| dewey-raw | 50 |
| dewey-search | 50 |
| dewey-sort | 250 |
| dewey-tens | 050 - General serial publications |
| discipline | Allgemeine Naturwissenschaft |
| doi_str_mv | 10.1007/978-3-0348-7731-2 |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>03601nam a2200565zcb4500</leader><controlfield tag="001">BV042443582</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20170925 </controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">150324s1991 xx o|||| 00||| ger d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783034877312</subfield><subfield code="c">Online</subfield><subfield code="9">978-3-0348-7731-2</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783034877329</subfield><subfield code="c">Print</subfield><subfield code="9">978-3-0348-7732-9</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/978-3-0348-7731-2</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)863885504</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV042443582</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">ger</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-634</subfield><subfield code="a">DE-92</subfield><subfield code="a">DE-706</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">50</subfield><subfield code="2">23</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">NAT 000</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Kircher, Roland</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Three-Dimensional Simulation of Semiconductor Devices</subfield><subfield code="c">von Roland Kircher, Wolfgang Bergner</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Basel</subfield><subfield code="b">Birkhäuser Basel</subfield><subfield code="c">1991</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (124 S.)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Progress in Numerical Simulation for Microelectronics</subfield><subfield code="v">1</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">The three-dimensional device simulation has become a necessary tool for the design and investigation of complex device structures. The evolution of the three-dimensional simulation tools is directly linked to the scaling of the devices and the increasing complexity of dynamic random access memory (DRAM) cells. Scaling of MOSFET devices led to a three-dimensional geometry with effects which cannot be handled by two-dimensional simulations anymore. With increasing integration density in DRAMs the third dimen sion had to be utilized to realize the storage capacitor. The resulting leakage problems have to be investigated and the cell design optimized by means of three-dimensional simulations. This book is intended for senior undergraduate students in applied physics, electrical engineering and computational physics, as well as for scientists and engineers involved in semiconductor device research and development. It is also intended for software engineers and all those who are concerned with simulation. The book will give an overview on the problems and activities concerning three-dimensional device simulation, without the claim of being a classical textbook. It starts from the classical semiconductor equations, discusses the physical models used in device simulation, describes the discretization and some numerical methods for solving the differential equations. The application of the threedimensional simulation to VLSI device engineering is illustrated by a few specific examples</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Science (General)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Science, general</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Naturwissenschaft</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterschaltung</subfield><subfield code="0">(DE-588)4158811-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Simulation</subfield><subfield code="0">(DE-588)4055072-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Simulation</subfield><subfield code="0">(DE-588)4055072-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Halbleiterschaltung</subfield><subfield code="0">(DE-588)4158811-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Simulation</subfield><subfield code="0">(DE-588)4055072-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bergner, Wolfgang</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Progress in Numerical Simulation for Microelectronics</subfield><subfield code="v">1</subfield><subfield code="w">(DE-604)BV004586845</subfield><subfield code="9">1</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1007/978-3-0348-7731-2</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-2-SNA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-2-BAD</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">ZDB-2-SNA_Archive</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-027878829</subfield></datafield></record></collection> |
| id | DE-604.BV042443582 |
| illustrated | Not Illustrated |
| indexdate | 2024-12-20T17:11:23Z |
| institution | BVB |
| isbn | 9783034877312 9783034877329 |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027878829 |
| oclc_num | 863885504 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-634 DE-92 DE-706 |
| owner_facet | DE-91 DE-BY-TUM DE-634 DE-92 DE-706 |
| physical | 1 Online-Ressource (124 S.) |
| psigel | ZDB-2-SNA ZDB-2-BAD ZDB-2-SNA_Archive |
| publishDate | 1991 |
| publishDateSearch | 1991 |
| publishDateSort | 1991 |
| publisher | Birkhäuser Basel |
| record_format | marc |
| series | Progress in Numerical Simulation for Microelectronics |
| series2 | Progress in Numerical Simulation for Microelectronics |
| spellingShingle | Kircher, Roland Three-Dimensional Simulation of Semiconductor Devices Progress in Numerical Simulation for Microelectronics Science (General) Science, general Naturwissenschaft Halbleiterschaltung (DE-588)4158811-3 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Simulation (DE-588)4055072-2 gnd |
| subject_GND | (DE-588)4158811-3 (DE-588)4113826-0 (DE-588)4055072-2 |
| title | Three-Dimensional Simulation of Semiconductor Devices |
| title_auth | Three-Dimensional Simulation of Semiconductor Devices |
| title_exact_search | Three-Dimensional Simulation of Semiconductor Devices |
| title_full | Three-Dimensional Simulation of Semiconductor Devices von Roland Kircher, Wolfgang Bergner |
| title_fullStr | Three-Dimensional Simulation of Semiconductor Devices von Roland Kircher, Wolfgang Bergner |
| title_full_unstemmed | Three-Dimensional Simulation of Semiconductor Devices von Roland Kircher, Wolfgang Bergner |
| title_short | Three-Dimensional Simulation of Semiconductor Devices |
| title_sort | three dimensional simulation of semiconductor devices |
| topic | Science (General) Science, general Naturwissenschaft Halbleiterschaltung (DE-588)4158811-3 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Simulation (DE-588)4055072-2 gnd |
| topic_facet | Science (General) Science, general Naturwissenschaft Halbleiterschaltung Halbleiterbauelement Simulation |
| url | https://doi.org/10.1007/978-3-0348-7731-2 |
| volume_link | (DE-604)BV004586845 |
| work_keys_str_mv | AT kircherroland threedimensionalsimulationofsemiconductordevices AT bergnerwolfgang threedimensionalsimulationofsemiconductordevices |