Epitaxy of semiconductors: introduction to physical principles
Gespeichert in:
| Beteilige Person: | |
|---|---|
| Format: | Buch |
| Sprache: | Englisch |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2013
|
| Schriftenreihe: | Graduate texts in physics
|
| Schlagwörter: | |
| Links: | http://deposit.dnb.de/cgi-bin/dokserv?id=4093467&prov=M&dok_var=1&dok_ext=htm http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025757104&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| Umfang: | XIV, 325 S. Ill., graph. Darst. |
| ISBN: | 3642329691 9783642329692 |
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Datensatz im Suchindex
| _version_ | 1819360947401129984 |
|---|---|
| adam_text | IMAGE 1
CONTENTS
1 INTRODUCTION 1
1.1 EPITAXY 1
1.1.1 ROOTS O F EPITAXY 1
1.1.2 EPITAXY AND BULK-CRYSTAL GROWTH 4
1.2 ISSUES O F EPITAXY 4
1.2.1 CONVENTION ON USE O F THE TERM ATOM 4
1.2.2 ASSEMBLY OF ATOMS 5
1.2.3 TASKS FOR EPITAXIAL GROWTH 6
REFERENCES 9
2 STRUCTURAL PROPERTIES O F HETEROSTRUCTURES 11
2.1 BASIC CRYSTAL STRUCTURES 11
2.1.1 NOTATION O F PLANES AND DIRECTIONS H
2.1.2 WAFER ORIENTATION V 13
2.1.3 FACE-CENTERED CUBIC AND HEXAGONAL CLOSE-PACKED STRUCTURES 13
2.1.4 ZINCBLENDE AND DIAMOND STRUCTURES 14
2.1.5 ROCKSALT AND CESIUM-CHLORIDE STRUCTURES 16
2.1.6 WURTZITE STRUCTURE 16
2.1.7 THERMAL EXPANSION 17
2.1.8 STRUCTURAL STABILITY MAP 19
2.1.9 POLYTYPISM 20
2.1.10 RANDOM ALLOYS AND VEGARD S RULE 21
2.1.11 VIRTUAL-CRYSTAL APPROXIMATION 26
2.2 ELASTIC PROPERTIES O F HETEROSTRUCTURES 26
2.2.1 STRAIN IN ONE AND TWO DIMENSIONS 26
2.2.2 THREE-DIMENSIONAL STRAIN 27
2.2.3 HOOKE S LAW 29
2.2.4 POISSON S RATIO 31
2.2.5 PSEUDOMORPHIC HETEROSTRUCTURES 32
2.2.6 CRITICAL LAYER THICKNESS 35
V I I
HTTP://D-NB.INFO/1024629155
IMAGE 2
VIII CONTENTS
2.2.7 APPROACHES TO EXTEND THE CRITICAL THICKNESS 39
2.2.8 PARTIALLY RELAXED LAYERS AND THERMAL MISMATCH 42
2.3 DISLOCATIONS 44
2.3.1 EDGE AND SCREW DISLOCATIONS 45
2.3.2 DISLOCATION NETWORK 46
2.3.3 DISLOCATIONS IN THE FEE STRUCTURE 47
2.3.4 DISLOCATIONS IN THE DIAMOND AND ZINCBLENDE STRUCTURES . . 49 2.3.5
DISLOCATION ENERGY 51
2.3.6 DISLOCATIONS IN THE HEP AND WURTZITE STRUCTURES 54
2.3.7 MOSAIC CRYSTAL 57
2.4 STRUCTURAL CHARACTERIZATION USING X-RAY DIFFRACTION 58
2.4.1 BRAGG S LAW 58
2.4.2 THE STRUCTURE FACTOR 59
2.4.3 THE RECIPROCAL LATTICE 61
2.4.4 THE EWALD CONSTRUCTION 63
2.4.5 HIGH-RESOLUTION SCANS IN THE RECIPROCAL SPACE 64
2.4.6 RECIPROCAL-SPACE MAP 67
2.5 PROBLEMS CHAP. 2 70
2.6 GENERA] READING CHAP. 2 73
REFERENCES 74
3 ELECTRONIC PROPERTIES O F HETEROSTRUCTURES 79
3.1 BULK PROPERTIES 79
3.1.1 ELECTRONIC BANDS O F ZINCBLENDE AND WURTZITE CRYSTALS . . . 79
3.1.2 STRAIN EFFECTS 81
3.1.3 TEMPERATURE DEPENDENCE OF THE BANDGAP 87
3.1.4 BANDGAP O F ALLOYS 88
3.2 BAND OFFSETS 90
3.2.1 ELECTRON-AFFINITY RULE 91
3.2.2 COMMON-ANION RULE 92
3.2.3 MODEL OF DEEP IMPURITY LEVELS 93
3.2.4 INTERFACE-DIPOL THEORY 95
3.2.5 MODEL-SOLID THEORY 96
3.2.6 OFFSETS OF SOME ISOVALENT HETEROSTRUCTURES 97
3.2.7 BAND OFFSET OF HETEROVALENT INTERFACES 97
3.2.8 BAND OFFSETS OF ALLOYS 101
3.3 ELECTRONIC STATES IN LOW-DIMENSIONAL STRUCTURES 101
3.3.1 DIMENSIONALITY O F THE ELECTRONIC DENSITY-OF-STATES 102 3.3.2
CHARACTERISTIC SCALE FOR SIZE QUANTIZATION 106
3.3.3 QUANTUM WELLS 107
3.3.4 QUANTUM WIRES 112
3.3.5 QUANTUM DOTS 116
3.4 PROBLEMS CHAP. 3 123
3.5 GENERAL READING CHAP. 3 125
REFERENCES 125
IMAGE 3
CONTENTS IX
4 THERMODYNAMICS O F EPITAXIAL LAYER-GROWTH 131
4.1 PHASE EQUILIBRIA 131
4.1.1 THERMODYNAMIC EQUILIBRIUM 132
4.1.2 GIBBS PHASE RULE 134
4.1.3 GIBBS ENERGY OF A SINGLE-COMPONENT SYSTEM 135
4.1.4 PHASES BOUNDARIES IN A SINGLE-COMPONENT SYSTEM 139
4.1.5 DRIVING FORCE FOR CRYSTALLIZATION 140
4.1.6 TWO-COMPONENT SYSTEM 143
4.2 CRYSTALLINE GROWTH 148
4.2.1 HOMOGENEOUS THREE-DIMENSIONAL NUCLEATION 148
4.2.2 HETEROGENEOUS THREE-DIMENSIONAL NUCLEATION 152
4.2.3 GROWTH MODES 154
4.2.4 EQUILIBRIUM SURFACES 155
4.2.5 TWO-DIMENSIONAL NUCLEATION 161
4.2.6 ISLAND GROWTH AND COALESCENCE 164
4.2.7 GROWTH WITHOUT NUCLEATION 166
4.2.8 RIPENING PROCESS AFTER GROWTH INTERRUPTION 168
4.3 PROBLEMS CHAP. 4 168
4.4 GENERAL READING CHAP. 4 169
REFERENCES 169
5 ATOMISTIC ASPECTS O F EPITAXIAL LAYER-GROWTH 171
5.1 SURFACE STRUCTURE 171
5.1.1 THE KINK SITE OF A KOSSEL CRYSTAL 172
5.1.2 SURFACES O F A KOSSEL CRYSTAL 173
5.1.3 RELAXATION AND RECONSTRUCTION 175
5.1.4 ELECTRON-COUNTING MODEL 176
5.1.5 DENOTATION OF SURFACE RECONSTRUCTIONS 179
5.1.6 RECONSTRUCTIONS OF THE GAAS(OOL) SURFACE 181
5.1.7 THE SILICON (111)(7 X 7) RECONSTRUCTION 184
5.2 KINETIC PROCESS STEPS IN LAYER GROWTH 186
5.2.1 KINETICS IN THE TERRACE-STEP-KINK MODEL 186
5.2.2 ATOMISTIC PROCESSES IN NUCLEATION AND GROWTH 188
5.2.3 ADATOMS ON A TERRACED SURFACE 192
5.2.4 GROWTH BY STEP ADVANCE 194
5.2.5 THE EHRLICH-SCHWOEBEL BARRIER 197
5.2.6 EFFECT O F THE EHRLICH-SCHWOEBEL BARRIER ON SURFACE STEPS . 199
5.2.7 ROUGHENING O F SURFACE STEPS 201
5.2.8 GROWTH OF A S I ( L L L ) ( 7 X 7) SURFACE 204
5.2.9 GROWTH O F A GAAS(OOL) 2(2 X 4) SURFACE 207
5.3 SELF-ORGANIZED NANOSTRUCTURES 209
5.3.1 STRANSKI-KRASTANOW ISLAND GROWTH 209
5.3.2 THERMODYNAMICS VERSUS KINETICS IN ISLAND FORMATION . . . 215 5.3.3
WIRE GROWTH ON NON-PLANAR SURFACES 217
IMAGE 4
X CONTENTS
5.4 PROBLEMS CHAP. 5 220
5.5 GENERAL READING CHAP. 5 221
REFERENCES 221
6 DOPING, DIFFUSION, AND CONTACTS 225
6.1 DOPING O F SEMICONDUCTORS 225
6.1.1 THERMAL EQUILIBRIUM CARRIER-DENSITIES 226
6.1.2 SOLUBILITY OF DOPANTS 231
6.1.3 AMPHOTERIC DOPANTS 235
6.1.4 COMPENSATION BY NATIVE DEFECTS 236
6.1.5 DX CENTERS 239
6.1.6 FERMI-LEVEL STABILIZATION MODEL 241
6.1.7 DELTA DOPING 243
6.2 DIFFUSION 247
6.2.1 DIFFUSION EQUATIONS 247
6.2.2 DIFFUSION MECHANISMS 250
6.2.3 EFFECTIVE DIFFUSION COEFFICIENTS 252
6.2.4 DISORDERING OF HETEROINTERFACES 255
6.3 METAL-SEMICONDUCTOR CONTACT 259
6.3.1 IDEAL SCHOTTKY CONTACT 259
6.3.2 REAL METAL-SEMICONDUCTOR CONTACT 263
6.3.3 PRACTICAL OHMIC METAL-SEMICONDUCTOR CONTACT 265
6.3.4 EPITAXIAL CONTACT STRUCTURES 267
6.4 PROBLEMS CHAP. 6 270
6.5 GENERAL READING CHAP. 6 271
REFERENCES 271
7 METHODS OF EPITAXY 275
7.1 LIQUID-PHASE EPITAXY 276
7.1.1 GROWTH SYSTEMS 277
7.1.2 CONGRUENT MELTING 279
7.1.3 LPE PRINCIPLE 281
7.1.4 LPE PROCESSES 283
7.2 METALORGANIC VAPOR-PHASE EPITAXY 286
7.2.1 METALORGANIC PRECURSORS 287
7.2.2 THE GROWTH PROCESS 290
7.2.3 MASS TRANSPORT 293
7.3 MOLECULAR BEAM EPITAXY 299
7.3.1 MBE SYSTEM AND VACUUM REQUIREMENTS 300
7.3.2 BEAM SOURCES 302
7.3.3 UNIFORMITY OF DEPOSITION 307
7.3.4 ADSORPTION O F IMPINGING PARTICLES 309
7.4 PROBLEMS CHAP. 7 310
7.5 GENERAL READING CHAP. 7 311
REFERENCES 311
IMAGE 5
CONTENTS XI
APPENDIX ANSWERS TO PROBLEMS 315
INDEX 319
FUNDAMENTAL PHYSICAL CONSTANTS 325
|
| any_adam_object | 1 |
| author | Pohl, Udo W. 19XX- |
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| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.6223 |
| dewey-search | 537.6223 |
| dewey-sort | 3537.6223 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
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| id | DE-604.BV040778831 |
| illustrated | Illustrated |
| indexdate | 2024-12-20T16:25:32Z |
| institution | BVB |
| isbn | 3642329691 9783642329692 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-025757104 |
| oclc_num | 830876594 |
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| owner_facet | DE-11 DE-634 DE-19 DE-BY-UBM DE-703 DE-20 DE-83 |
| physical | XIV, 325 S. Ill., graph. Darst. |
| publishDate | 2013 |
| publishDateSearch | 2013 |
| publishDateSort | 2013 |
| publisher | Springer |
| record_format | marc |
| series2 | Graduate texts in physics |
| spellingShingle | Pohl, Udo W. 19XX- Epitaxy of semiconductors introduction to physical principles Heterostruktur (DE-588)4123378-5 gnd Halbleiter (DE-588)4022993-2 gnd Epitaxie (DE-588)4152545-0 gnd |
| subject_GND | (DE-588)4123378-5 (DE-588)4022993-2 (DE-588)4152545-0 |
| title | Epitaxy of semiconductors introduction to physical principles |
| title_auth | Epitaxy of semiconductors introduction to physical principles |
| title_exact_search | Epitaxy of semiconductors introduction to physical principles |
| title_full | Epitaxy of semiconductors introduction to physical principles Udo W. Pohl |
| title_fullStr | Epitaxy of semiconductors introduction to physical principles Udo W. Pohl |
| title_full_unstemmed | Epitaxy of semiconductors introduction to physical principles Udo W. Pohl |
| title_short | Epitaxy of semiconductors |
| title_sort | epitaxy of semiconductors introduction to physical principles |
| title_sub | introduction to physical principles |
| topic | Heterostruktur (DE-588)4123378-5 gnd Halbleiter (DE-588)4022993-2 gnd Epitaxie (DE-588)4152545-0 gnd |
| topic_facet | Heterostruktur Halbleiter Epitaxie |
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