Effective Electron Mass in Low-Dimensional Semiconductors:
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Electronic eBook |
| Language: | English |
| Published: |
Berlin [u.a.]
Springer
2013
|
| Series: | Springer Series in Materials Science
167 |
| Subjects: | |
| Links: | https://doi.org/10.1007/978-3-642-31248-9 https://doi.org/10.1007/978-3-642-31248-9 https://doi.org/10.1007/978-3-642-31248-9 http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025731114&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025731114&sequence=000003&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA |
| Item Description: | This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped semiconductors and their nanostructures is discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph. D aspirants and researchers in the fields of solid-state sciences, materials science, nanoscience and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures. The book is written for post graduate students, researchers and engineers, professionals in the fields of solid state sciences, materials science, nanoscience and technology, nanostructured materials and condensed matter physics |
| Physical Description: | 1 Online-Ressource |
| ISBN: | 9783642312489 |
| DOI: | 10.1007/978-3-642-31248-9 |
Staff View
MARC
| LEADER | 00000nam a2200000zcb4500 | ||
|---|---|---|---|
| 001 | BV040751362 | ||
| 003 | DE-604 | ||
| 005 | 20131204 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 130214s2013 xx o|||| 00||| eng d | ||
| 020 | |a 9783642312489 |c Online |9 978-3-642-31248-9 | ||
| 024 | 7 | |a 10.1007/978-3-642-31248-9 |2 doi | |
| 035 | |a (OCoLC)863991952 | ||
| 035 | |a (DE-599)BVBBV040751362 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-703 |a DE-91 | ||
| 082 | 0 | |a 537.6226 |2 22//ger | |
| 084 | |a UP 3200 |0 (DE-625)146379: |2 rvk | ||
| 084 | |a UP 5010 |0 (DE-625)146407: |2 rvk | ||
| 084 | |a UP 5050 |0 (DE-625)146409: |2 rvk | ||
| 084 | |a PHY 000 |2 stub | ||
| 100 | 1 | |a Bhattacharya, Sitangshu |e Verfasser |0 (DE-588)136807151 |4 aut | |
| 245 | 1 | 0 | |a Effective Electron Mass in Low-Dimensional Semiconductors |c Sitangshu Bhattacharya ; Kamakhya Prasad Ghatak |
| 264 | 1 | |a Berlin [u.a.] |b Springer |c 2013 | |
| 300 | |a 1 Online-Ressource | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 1 | |a Springer Series in Materials Science |v 167 | |
| 500 | |a This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped semiconductors and their nanostructures is discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph. D aspirants and researchers in the fields of solid-state sciences, materials science, nanoscience and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures. The book is written for post graduate students, researchers and engineers, professionals in the fields of solid state sciences, materials science, nanoscience and technology, nanostructured materials and condensed matter physics | ||
| 650 | 4 | |a Physics | |
| 650 | 4 | |a Microwaves | |
| 650 | 4 | |a Materials | |
| 650 | 4 | |a Optical materials | |
| 650 | 4 | |a Solid State Physics | |
| 650 | 4 | |a Optical and Electronic Materials | |
| 650 | 4 | |a Nanoscale Science and Technology | |
| 650 | 4 | |a Structural Materials | |
| 650 | 4 | |a Microwaves, RF and Optical Engineering | |
| 650 | 4 | |a Quantum Optics | |
| 650 | 0 | 7 | |a Elektron |0 (DE-588)4125978-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Niederdimensionaler Halbleiter |0 (DE-588)4482656-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Effektive Masse |0 (DE-588)4400801-6 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Effektive Masse |0 (DE-588)4400801-6 |D s |
| 689 | 0 | 1 | |a Elektron |0 (DE-588)4125978-6 |D s |
| 689 | 0 | 2 | |a Niederdimensionaler Halbleiter |0 (DE-588)4482656-4 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 700 | 1 | |a Ghatak, Kamakhya Prasad |d 1953- |e Verfasser |0 (DE-588)136807135 |4 aut | |
| 776 | 0 | 8 | |i Erscheint auch als |n Druckausgabe |z 978-3-642-31247-2 |
| 830 | 0 | |a Springer Series in Materials Science |v 167 |w (DE-604)BV040385147 |9 167 | |
| 856 | 4 | 0 | |u https://doi.org/10.1007/978-3-642-31248-9 |x Verlag |3 Volltext |
| 856 | 4 | 2 | |m Springer Fremddatenuebernahme |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025731114&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 856 | 4 | 2 | |m Springer Fremddatenuebernahme |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025731114&sequence=000003&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA |3 Abstract |
| 912 | |a ZDB-2-PHA | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-025731114 | |
| 966 | e | |u https://doi.org/10.1007/978-3-642-31248-9 |l DE-91 |p ZDB-2-PHA |x Verlag |3 Volltext | |
| 966 | e | |u https://doi.org/10.1007/978-3-642-31248-9 |l DE-703 |p ZDB-2-PHA |x Verlag |3 Volltext | |
Record in the Search Index
| DE-BY-TUM_katkey | 2048250 |
|---|---|
| _version_ | 1821931057360928768 |
| adam_text | EFFECTIVE ELECTRON MASS IN LOW-DIMENSIONAL SEMICONDUCTORS
/ BHATTACHARYA, SITANGSHU
: 2013
TABLE OF CONTENTS / INHALTSVERZEICHNIS
PART I: INFLUENCE OF LIGHT WAVES ON THE EFFECTIVE ELECTRON MASS (EEM) IN
OPTOELECTRONIC SEMICONDUCTORS
PART II: INFLUENCE OF QUANTUM CONFINEMENT ON THE EEM IN NON-PARABOLIC
SEMICONDUCTORS
PART III: THE EEM IN QUANTUM CONFINED SUPERLATTICES OF NON- PARABOLIC
SEMICONDUCTORS
PART IV: INFLUENCE OF INTENSE ELECTRIC FIELD ON THE EEM IN
OPTOELECTRONIC SEMICONDUCTORS
DIESES SCHRIFTSTUECK WURDE MASCHINELL ERZEUGT.
EFFECTIVE ELECTRON MASS IN LOW-DIMENSIONAL SEMICONDUCTORS
/ BHATTACHARYA, SITANGSHU
: 2013
ABSTRACT / INHALTSTEXT
THIS BOOK DEALS WITH THE EFFECTIVE ELECTRON MASS (EEM) IN LOW
DIMENSIONAL SEMICONDUCTORS. THE MATERIALS CONSIDERED ARE QUANTUM
CONFINED NON-LINEAR OPTICAL, III-V, II-VI, GAP, GE, PTSB2, ZERO-GAP,
STRESSED, BISMUTH, CARBON NANOTUBES, GASB, IV-VI, TE, II-V, BI2TE3, SB,
III-V, II-VI, IV-VI SEMICONDUCTORS AND QUANTIZED III-V, II-VI, IV-VI AND
HGTE/CDTE SUPERLATTICES WITH GRADED INTERFACES AND EFFECTIVE MASS
SUPERLATTICES. THE PRESENCE OF INTENSE ELECTRIC FIELD AND THE LIGHT
WAVES CHANGE THE BAND STRUCTURE OF OPTOELECTRONIC SEMICONDUCTORS IN
FUNDAMENTAL WAYS, WHICH HAVE ALSO BEEN INCORPORATED IN THE STUDY OF THE
EEM IN QUANTIZED STRUCTURES OF OPTOELECTRONIC COMPOUNDS THAT CONTROL THE
STUDIES OF THE QUANTUM EFFECT DEVICES UNDER STRONG FIELDS. THE
IMPORTANCE OF MEASUREMENT OF BAND GAP IN OPTOELECTRONIC MATERIALS UNDER
STRONG ELECTRIC FIELD AND EXTERNAL PHOTO EXCITATION HAS ALSO BEEN
DISCUSSED IN THIS CONTEXT. THE INFLUENCE OF CROSSED ELECTRIC AND
QUANTIZING MAGNETIC FIELDS ON THE EEM AND THE EEM IN HEAVILY DOPED
SEMICONDUCTORS AND THEIR NANOSTRUCTURES IS DISCUSSED. THIS BOOK CONTAINS
200 OPEN RESEARCH PROBLEMS WHICH FORM THE INTEGRAL PART OF THE TEXT AND
ARE USEFUL FOR BOTH PH. D ASPIRANTS AND RESEARCHERS IN THE FIELDS OF
SOLID-STATE SCIENCES, MATERIALS SCIENCE, NANOSCIENCE AND TECHNOLOGY AND
ALLIED FIELDS IN ADDITION TO THE GRADUATE COURSES IN MODERN
SEMICONDUCTOR NANOSTRUCTURES. THE BOOK IS WRITTEN FOR POST GRADUATE
STUDENTS, RESEARCHERS AND ENGINEERS, PROFESSIONALS IN THE FIELDS OF
SOLID STATE SCIENCES, MATERIALS SCIENCE, NANOSCIENCE AND TECHNOLOGY,
NANOSTRUCTURED MATERIALS AND CONDENSED MATTER PHYSICS
DIESES SCHRIFTSTUECK WURDE MASCHINELL ERZEUGT.
|
| any_adam_object | 1 |
| author | Bhattacharya, Sitangshu Ghatak, Kamakhya Prasad 1953- |
| author_GND | (DE-588)136807151 (DE-588)136807135 |
| author_facet | Bhattacharya, Sitangshu Ghatak, Kamakhya Prasad 1953- |
| author_role | aut aut |
| author_sort | Bhattacharya, Sitangshu |
| author_variant | s b sb k p g kp kpg |
| building | Verbundindex |
| bvnumber | BV040751362 |
| classification_rvk | UP 3200 UP 5010 UP 5050 |
| classification_tum | PHY 000 |
| collection | ZDB-2-PHA |
| ctrlnum | (OCoLC)863991952 (DE-599)BVBBV040751362 |
| dewey-full | 537.6226 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.6226 |
| dewey-search | 537.6226 |
| dewey-sort | 3537.6226 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| doi_str_mv | 10.1007/978-3-642-31248-9 |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>04648nam a2200673zcb4500</leader><controlfield tag="001">BV040751362</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20131204 </controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">130214s2013 xx o|||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783642312489</subfield><subfield code="c">Online</subfield><subfield code="9">978-3-642-31248-9</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/978-3-642-31248-9</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)863991952</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV040751362</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-703</subfield><subfield code="a">DE-91</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">537.6226</subfield><subfield code="2">22//ger</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3200</subfield><subfield code="0">(DE-625)146379:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 5010</subfield><subfield code="0">(DE-625)146407:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 5050</subfield><subfield code="0">(DE-625)146409:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 000</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Bhattacharya, Sitangshu</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)136807151</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Effective Electron Mass in Low-Dimensional Semiconductors</subfield><subfield code="c">Sitangshu Bhattacharya ; Kamakhya Prasad Ghatak</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Berlin [u.a.]</subfield><subfield code="b">Springer</subfield><subfield code="c">2013</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Springer Series in Materials Science</subfield><subfield code="v">167</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped semiconductors and their nanostructures is discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph. D aspirants and researchers in the fields of solid-state sciences, materials science, nanoscience and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures. The book is written for post graduate students, researchers and engineers, professionals in the fields of solid state sciences, materials science, nanoscience and technology, nanostructured materials and condensed matter physics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Physics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Microwaves</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Optical materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Solid State Physics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Optical and Electronic Materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Nanoscale Science and Technology</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Structural Materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Microwaves, RF and Optical Engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Quantum Optics</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Elektron</subfield><subfield code="0">(DE-588)4125978-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Niederdimensionaler Halbleiter</subfield><subfield code="0">(DE-588)4482656-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Effektive Masse</subfield><subfield code="0">(DE-588)4400801-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Effektive Masse</subfield><subfield code="0">(DE-588)4400801-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Elektron</subfield><subfield code="0">(DE-588)4125978-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Niederdimensionaler Halbleiter</subfield><subfield code="0">(DE-588)4482656-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ghatak, Kamakhya Prasad</subfield><subfield code="d">1953-</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)136807135</subfield><subfield code="4">aut</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druckausgabe</subfield><subfield code="z">978-3-642-31247-2</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Springer Series in Materials Science</subfield><subfield code="v">167</subfield><subfield code="w">(DE-604)BV040385147</subfield><subfield code="9">167</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1007/978-3-642-31248-9</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">Springer Fremddatenuebernahme</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025731114&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">Springer Fremddatenuebernahme</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025731114&sequence=000003&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Abstract</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-2-PHA</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-025731114</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-3-642-31248-9</subfield><subfield code="l">DE-91</subfield><subfield code="p">ZDB-2-PHA</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-3-642-31248-9</subfield><subfield code="l">DE-703</subfield><subfield code="p">ZDB-2-PHA</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| id | DE-604.BV040751362 |
| illustrated | Not Illustrated |
| indexdate | 2024-12-20T16:24:55Z |
| institution | BVB |
| isbn | 9783642312489 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-025731114 |
| oclc_num | 863991952 |
| open_access_boolean | |
| owner | DE-703 DE-91 DE-BY-TUM |
| owner_facet | DE-703 DE-91 DE-BY-TUM |
| physical | 1 Online-Ressource |
| psigel | ZDB-2-PHA |
| publishDate | 2013 |
| publishDateSearch | 2013 |
| publishDateSort | 2013 |
| publisher | Springer |
| record_format | marc |
| series | Springer Series in Materials Science |
| series2 | Springer Series in Materials Science |
| spellingShingle | Bhattacharya, Sitangshu Ghatak, Kamakhya Prasad 1953- Effective Electron Mass in Low-Dimensional Semiconductors Springer Series in Materials Science Physics Microwaves Materials Optical materials Solid State Physics Optical and Electronic Materials Nanoscale Science and Technology Structural Materials Microwaves, RF and Optical Engineering Quantum Optics Elektron (DE-588)4125978-6 gnd Niederdimensionaler Halbleiter (DE-588)4482656-4 gnd Effektive Masse (DE-588)4400801-6 gnd |
| subject_GND | (DE-588)4125978-6 (DE-588)4482656-4 (DE-588)4400801-6 |
| title | Effective Electron Mass in Low-Dimensional Semiconductors |
| title_auth | Effective Electron Mass in Low-Dimensional Semiconductors |
| title_exact_search | Effective Electron Mass in Low-Dimensional Semiconductors |
| title_full | Effective Electron Mass in Low-Dimensional Semiconductors Sitangshu Bhattacharya ; Kamakhya Prasad Ghatak |
| title_fullStr | Effective Electron Mass in Low-Dimensional Semiconductors Sitangshu Bhattacharya ; Kamakhya Prasad Ghatak |
| title_full_unstemmed | Effective Electron Mass in Low-Dimensional Semiconductors Sitangshu Bhattacharya ; Kamakhya Prasad Ghatak |
| title_short | Effective Electron Mass in Low-Dimensional Semiconductors |
| title_sort | effective electron mass in low dimensional semiconductors |
| topic | Physics Microwaves Materials Optical materials Solid State Physics Optical and Electronic Materials Nanoscale Science and Technology Structural Materials Microwaves, RF and Optical Engineering Quantum Optics Elektron (DE-588)4125978-6 gnd Niederdimensionaler Halbleiter (DE-588)4482656-4 gnd Effektive Masse (DE-588)4400801-6 gnd |
| topic_facet | Physics Microwaves Materials Optical materials Solid State Physics Optical and Electronic Materials Nanoscale Science and Technology Structural Materials Microwaves, RF and Optical Engineering Quantum Optics Elektron Niederdimensionaler Halbleiter Effektive Masse |
| url | https://doi.org/10.1007/978-3-642-31248-9 http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025731114&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025731114&sequence=000003&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV040385147 |
| work_keys_str_mv | AT bhattacharyasitangshu effectiveelectronmassinlowdimensionalsemiconductors AT ghatakkamakhyaprasad effectiveelectronmassinlowdimensionalsemiconductors |