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Fowler-Nordheim field emission: effects in semiconductor nanostructures

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Bibliographic Details
Main Authors:	Bhattacharya, Sitangshu (Author), Ghatak, Kamakhya Prasad 1953- (Author)
Format:	Book
Language:	English
Published:	Berlin [u.a.] Springer 2012
Series:	Springer series in solid state sciences 170
Subjects:	Feldemission Nanostruktur Halbleiter
Links:	http://deposit.dnb.de/cgi-bin/dokserv?id=3702256&prov=M&dok_var=1&dok_ext=htm http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024738675&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
Item Description:	Literaturangaben
Physical Description:	XXII, 338 S. graph. Darst.
ISBN:	9783642204920 3642204929 9783642204937

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adam_text	IMAGE 1 CONTENTS PART I FOWLER-NORDHEIM FIELD EMISSION FROM QUANTUM WIRES AND SUPERLATTICES OF NONPARABOLIC SEMICONDUCTORS 1 FIELD EMISSION FROM QUANTUM WIRES OF NONPARABOLIC SEMICONDUCTORS 3 1.1 INTRODUCTION 3 1.2 THEORETICAL BACKGROUND 7 1.2.1 THE FIELD EMISSION FROM QUANTUM WIRES OF NONLINEAR OPTICAL SEMICONDUCTORS 7 1.2.2 THE FIELD EMISSION FROM QUANTUM WIRES OF III- V SEMICONDUCTORS 11 1.2.3 THE FIELD EMISSION FROM QUANTUM WIRES OF II- VI SEMICONDUCTORS 18 1.2.4 THE FIELD EMISSION FROM QUANTUM WIRES OF BISMUTH 19 1.2.5 THE FIELD EMISSION FROM QUANTUM WIRES OF IV-VI SEMICONDUCTORS 24 1.2.6 THE FIELD EMISSION FROM QUANTUM WIRES OF STRESSED SEMICONDUCTORS 26 1.2.7 THE FIELD EMISSION FROM QUANTUM WIRES OF TELLURIUM 28 1.2.8 THE FIELD EMISSION FROM QUANTUM WIRES OF GALLIUM PHOSPHIDE 29 1.2.9 THE FIELD EMISSION FROM QUANTUM WIRES OF PLATINUM ANTIMONIDE 31 1.2.10 THE FIELD EMISSION FROM QUANTUM WIRES OF BISMUTH TELLURIDE 32 1.2.11 THE FIELD EMISSION FROM QUANTUM WIRES OF GERMANIUM... 34 1.2.12 THE FIELD EMISSION FROM QUANTUM WIRES OF GALLIUM ANTIMONIDE 37 1.2.13 THE FIELD EMISSION FROM QUANTUM WIRES OF II-V MATERIALS 38 BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/1010602101 DIGITALISIERT DURCH IMAGE 2 CONTENTS 1.3 RESULT AND DISCUSSIONS 39 1.4 OPEN RESEARCH PROBLEMS 53 REFERENCES 63 FIELD EMISSION FROM QUANTUM WIRE SUPERLATTICES OF NON-PARABOLIC SEMICONDUCTORS 71 2.1 INTRODUCTION 71 2.2 THEORETICAL BACKGROUND 72 2.2.1 THE FIELD EMISSION FROM III-V QUANTUM WIRE SUPERLATTICES WITH GRADED INTERFACES 72 2.2.2 THE FIELD EMISSION FROM II-VI QUANTUM WIRE SUPERLATTICES WITH GRADED INTERFACES 77 2.2.3 THE FIELD EMISSION FROM IV-VI QUANTUM WIRE SUPERLATTICES WITH GRADED INTERFACES 82 2.2.4 THE FIELD EMISSION FROM HGTE/CDTE QUANTUM WIRE SUPERLATTICES WITH GRADED INTERFACES 87 2.2.5 THE FIELD EMISSION FROM QUANTUM WIRE III-V EFFECTIVE MASS SUPERLATTICES 92 2.2.6 THE FIELD EMISSION FROM QUANTUM WIRE II-VI EFFECTIVE MASS SUPERLATTICES 94 2.2.7 THE FIELD EMISSION FROM QUANTUM WIRE IV-VI EFFECTIVE MASS SUPERLATTICES 96 2.2.8 THE FIELD EMISSION FROM QUANTUM WIRE HGTE/CDTE EFFECTIVE MASS SUPERLATTICES 99 2.3 RESULT AND DISCUSSIONS 101 2.4 OPEN RESEARCH PROBLEMS 104 REFERENCES 106 FIELD EMISSION FROM QUANTUM CONFINED SEMICONDUCTORS UNDER MAGNETIC QUANTIZATION 109 3.1 INTRODUCTION 109 3.2 THEORITICAL BACKGROUND 110 3.2.1 THE FIELD EMISSION FROM NONLINEAR OPTICAL SEMICONDUCTORS UNDER MAGNETIC QUANTIZATION 110 3.2.2 THE FIELD EMISSION FROM III-V SEMICONDUCTORS UNDER MAGNETIC QUANTIZATION 112 3.2.3 THE FIELD EMISSION FROM II-VI SEMICONDUCTORS UNDER MAGNETIC QUANTIZATION 119 3.2.4 THE FIELD EMISSION FROM UNDER BISMUTH MAGNETIC QUANTIZATION 119 3.2.5 THE FIELD EMISSION FROM IV-VI SEMICONDUCTORS UNDER MAGNETIC QUANTIZATION 124 3.2.6 THE FIELD EMISSION FROM STRESSED SEMICONDUCTORS UNDER MAGNETIC QUANTIZATION 129 IMAGE 3 CONTENTS XV 3.2.7 THE FIELD EMISSION FROM TELLURIUM UNDER MAGNETIC QUANTIZATION 130 3.2.8 THE FIELD EMISSION FROM N-GALLIUM PHOSPHIDE UNDER MAGNETIC QUANTIZATION 131 3.2.9 THE FIELD EMISSION FROM PLATINUM ANTIMONIDE UNDER MAGNETIC QUANTIZATION 133 3.2.10 THE FIELD EMISSION FROM BISMUTH TELLURIDE UNDER MAGNETIC QUANTIZATION 135 3.2.11 THE FIELD EMISSION FROM GERMANIUM UNDER MAGNETIC QUANTIZATION 136 3.2.12 THE FIELD EMISSION FROM GALLIUM ANTIMONIDE UNDER MAGNETIC QUANTIZATION 138 3.2.13 THE FIELD EMISSION FROM II-V SEMICONDUCTORS UNDER MAGNETIC QUANTIZATION 139 3.3 RESULT AND DISCUSSIONS 140 3.4 OPEN RESEARCH PROBLEMS 152 REFERENCES 153 4 FIELD EMISSION OF NONPARABOLIC SEMICONDUCTORS UNDER MAGNETIC QUANTIZATION 157 4.1 INTRODUCTION 157 4.2 THEORETICAL BACKGROUND 157 4.2.1 THE FIELD EMISSION FROM III-V SUPERLATTICES WITH GRADED INTERFACES UNDER MAGNETIC QUANTIZATION 157 4.2.2 THE FIELD EMISSION FROM II-VI SUPERLATTICES WITH GRADED INTERFACES UNDER MAGNETIC QUANTIZATION 161 4.2.3 THE FIELD EMISSION FROM IV-VI SUPERLATTICES WITH GRADED INTERFACES UNDER MAGNETIC QUANTIZATION 165 4.2.4 THE FIELD EMISSION FROM HGTE/CDTE SUPERLATTICES WITH GRADED INTERFACES UNDER MAGNETIC QUANTIZATION 168 4.2.5 THE FIELD EMISSION FROM III-V EFFECTIVE MASS SUPERLATTICES UNDER MAGNETIC QUANTIZATION 172 4.2.6 THE FIELD EMISSION FROM II-VI EFFECTIVE MASS SUPERLATTICES UNDER MAGNETIC QUANTIZATION 173 4.2.7 THE FIELD EMISSION FROM IV-VI EFFECTIVE MASS SUPERLATTICES UNDER MAGNETIC QUANTIZATION 175 4.2.8 THE FIELD EMISSION FROM HGTE/CDTE EFFECTIVE MASS SUPERLATTICES UNDER MAGNETIC QUANTIZATION 177 4.3 RESULT AND DISCUSSIONS 178 4.4 OPEN RESEARCH PROBLEMS 181 REFERENCES 184 IMAGE 4 XVI CONTENTS PART II FOWLER-NORDHEIM FIELD EMISSION FROM QUANTUM- CONFINED III-V SEMICONDUCTORS IN THE PRESENCE OF LIGHT WAVES 5 FIELD EMISSION FROM QUANTUM-CONFINED III-V SEMICONDUCTORS IN THE PRESENCE OF LIGHT WAVES 187 5.1 INTRODUCTION 187 5.2 THEORETICAL BACKGROUND 187 5.2.1 FIELD EMISSION FROM III-V SEMICONDUCTORS UNDER MAGNETIC QUANTIZATION IN THE PRESENCE OF LIGHT WAVES 187 5.2.2 FIELD EMISSION FROM QUANTUM WIRES OF III-V SEMICONDUCTORS 192 5.2.3 FIELD EMISSION FROM EFFECTIVE MASS SUPERLATTICES OF III-V SEMICONDUCTORS IN THE PRESENCE OF LIGHT WAVES UNDER MAGNETIC QUANTIZATION 194 5.2.4 FIELD EMISSION FROM QUANTUM WIRE EFFECTIVE MASS SUPERLATTICES OF III-V SEMICONDUCTORS 200 5.2.5 FIELD EMISSION FROM SUPERLATTICES OF III-V SEMICONDUCTORS WITH GRADED INTERFACES UNDER MAGNETIC QUANTIZATION 204 5.2.6 FIELD EMISSION FROM QUANTUM WIRE SUPERLATTICES OF III-V SEMICONDUCTORS WITH GRADED INTERFACES 210 5.3 RESULT AND DISCUSSIONS 215 5.4 OPEN RESEARCH PROBLEMS 221 REFERENCES 230 PART III FOWLER-NORDHEIM FIELD EMISSION FROM QUANTUM- CONFINED OPTOELECTRONIC SEMICONDUCTORS IN THE PRESENCE OF INTENSE ELECTRIC FIELD 6 FIELD EMISSION FROM QUANTUM-CONFINED OPTOELECTRONIC SEMICONDUCTORS 233 6.1 INTRODUCTION 233 6.2 THEORETICAL BACKGROUND 234 6.2.1 FIELD EMISSION FROM OPTOELECTRONIC SEMICONDUCTORS UNDER MAGNETIC QUANTIZATION 234 6.2.2 FIELD EMISSION FROM QUANTUM WIRES OF OPTOELECTRONIC SEMICONDUCTORS 248 6.2.3 FIELD EMISSION FROM EFFECTIVE MASS SUPERLATTICES OF OPTOELECTRONIC SEMICONDUCTORS UNDER MAGNETIC QUANTIZATION 249 IMAGE 5 CONTENTS XVUE 6.2.4 FIELD EMISSION FROM QUANTUM WIRE EFFECTIVE MASS SUPERLATTICES OF OPTOELECTRONIC SEMICONDUCTORS 253 6.2.5 FIELD EMISSION FROM SUPERLATTICES OF OPTOELECTRONIC SEMICONDUCTORS WITH GRADED INTERFACES UNDER MAGNETIC QUANTIZATION 256 6.2.6 FIELD EMISSION FROM QUANTUM WIRE SUPERLATTICES OF OPTOELECTRONIC SEMICONDUCTORS WITH GRADED INTERFACES 262 6.3 RESULTS AND DISCUSSION 267 6.4 OPEN RESEARCH PROBLEM 280 REFERENCES 280 7 APPLICATIONS AND BRIEF REVIEW OF EXPERIMENTAL RESULTS 281 7.1 INTRODUCTION 281 7.2 APPLICATIONS 281 7.2.1 DEBYE SCREENING LENGTH 281 7.2.2 CARRIER CONTRIBUTION TO THE ELASTIC CONSTANTS 284 7.2.3 EFFECTIVE ELECTRON MASS 291 7.2.4 DIFFUSIVITY-MOBILITY RATIO 295 7.2.5 MEASUREMENT OF BANDGAP IN THE PRESENCE OF LIGHT WAVES 299 7.2.6 DIFFUSION COEFFICIENT OF THE MINORITY CARRIERS 302 7.2.7 NONLINEAR OPTICAL RESPONSE 303 7.2.8 THIRD-ORDER NONLINEAR OPTICAL SUSCEPTIBILITY 303 7.2.9 GENERALIZED RAMAN GAIN 303 7.3 BRIEF REVIEW OF EXPERIMENTAL WORKS 304 7.3.1 FIELD EMISSION FROM CARBON NANOTUBES IN THE PRESENCE OF STRONG ELECTRIC FIELD 304 7.3.2 OPTIMIZATION OF FOWLER-NORDHEIM (FN) FIELD EMISSION CURRENT FROM NANOSTRUCTURED MATERIALS 309 7.3.3 VERY BRIEF DESCRIPTION OF EXPERIMENTAL RESULTS OF FNFE FROM NANOSTRUCTURED MATERIALS 312 7.4 OPEN RESEARCH PROBLEM 323 REFERENCES 323 8 CONCLUSION AND FUTURE RESEARCH 329 REFERENCES 333 MATERIAL INDEX 335 SUBJECT INDEX 337
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spellingShingle	Bhattacharya, Sitangshu Ghatak, Kamakhya Prasad 1953- Fowler-Nordheim field emission effects in semiconductor nanostructures Springer series in solid state sciences Feldemission (DE-588)4153913-8 gnd Nanostruktur (DE-588)4204530-7 gnd Halbleiter (DE-588)4022993-2 gnd
subject_GND	(DE-588)4153913-8 (DE-588)4204530-7 (DE-588)4022993-2
title	Fowler-Nordheim field emission effects in semiconductor nanostructures
title_auth	Fowler-Nordheim field emission effects in semiconductor nanostructures
title_exact_search	Fowler-Nordheim field emission effects in semiconductor nanostructures
title_full	Fowler-Nordheim field emission effects in semiconductor nanostructures Sitangshu Bhattacharya ; Kamakhya Prasad Ghatak
title_fullStr	Fowler-Nordheim field emission effects in semiconductor nanostructures Sitangshu Bhattacharya ; Kamakhya Prasad Ghatak
title_full_unstemmed	Fowler-Nordheim field emission effects in semiconductor nanostructures Sitangshu Bhattacharya ; Kamakhya Prasad Ghatak
title_short	Fowler-Nordheim field emission
title_sort	fowler nordheim field emission effects in semiconductor nanostructures
title_sub	effects in semiconductor nanostructures
topic	Feldemission (DE-588)4153913-8 gnd Nanostruktur (DE-588)4204530-7 gnd Halbleiter (DE-588)4022993-2 gnd
topic_facet	Feldemission Nanostruktur Halbleiter
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volume_link	(DE-604)BV000016582
work_keys_str_mv	AT bhattacharyasitangshu fowlernordheimfieldemissioneffectsinsemiconductornanostructures AT ghatakkamakhyaprasad fowlernordheimfieldemissioneffectsinsemiconductornanostructures

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