Availability: Analysis of electrically active defects in silicon for solar cells

Saved in:

Bibliographic Details
Main Author:	Roth, Thomas 1967- (Author)
Format:	Thesis/Dissertation Book
Language:	English
Published:	München Dr. Hut 2009
Edition:	1. Aufl.
Series:	Physik
Subjects:	Silicium Gitterbaufehler Hochschulschrift
Links:	http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017538840&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
Physical Description:	IV, 188 S. 210 mm x 148 mm, 300 gr.
ISBN:	9783868530360

Staff View

MARC


LEADER	00000nam a2200000 c 4500
001	BV035482317
003	DE-604
005	20090713
007	t\|
008	090512s2009 gw m\|\|\| 00\|\|\| eng d
015			\|a 09,N19,0689 \|2 dnb
016	7		\|a 993731333 \|2 DE-101
020			\|a 9783868530360 \|c PB. : EUR 39.00 \|9 978-3-86853-036-0
024	3		\|a 9783868530360
035			\|a (OCoLC)644610726
035			\|a (DE-599)DNB993731333
040			\|a DE-604 \|b ger \|e rakddb
041	0		\|a eng
044			\|a gw \|c XA-DE-BY
049			\|a DE-12 \|a DE-91
082	0		\|a 537.6221 \|2 22/ger
084			\|a 530 \|2 sdnb
100	1		\|a Roth, Thomas \|d 1967- \|e Verfasser \|0 (DE-588)120544350 \|4 aut
245	1	0	\|a Analysis of electrically active defects in silicon for solar cells \|c Thomas Roth
250			\|a 1. Aufl.
264		1	\|a München \|b Dr. Hut \|c 2009
300			\|a IV, 188 S. \|c 210 mm x 148 mm, 300 gr.
336			\|b txt \|2 rdacontent
337			\|b n \|2 rdamedia
338			\|b nc \|2 rdacarrier
490	0		\|a Physik
502			\|a Zugl.: Konstanz, Univ., Diss., 2008
650	0	7	\|a Silicium \|0 (DE-588)4077445-4 \|2 gnd \|9 rswk-swf
650	0	7	\|a Gitterbaufehler \|0 (DE-588)4125030-8 \|2 gnd \|9 rswk-swf
655		7	\|0 (DE-588)4113937-9 \|a Hochschulschrift \|2 gnd-content
689	0	0	\|a Silicium \|0 (DE-588)4077445-4 \|D s
689	0	1	\|a Gitterbaufehler \|0 (DE-588)4125030-8 \|D s
689	0		\|5 DE-604
856	4	2	\|m DNB Datenaustausch \|q application/pdf \|u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017538840&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA \|3 Inhaltsverzeichnis
943	1		\|a oai:aleph.bib-bvb.de:BVB01-017538840

Record in the Search Index

DE-BY-TUM_call_number	0001 2009 A 5156
DE-BY-TUM_katkey	1699678
DE-BY-TUM_location	Mag
DE-BY-TUM_media_number	040007035912
_version_	1821933713512988673
adam_text	TABLE OF CONTENTS TABLE OF CONTENTS I 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.2 THESIS OUTLINE 4 2 CARRIER LIFETIME IN CRYSTALLINE SILICON 7 2.1 CARRIER DENSITIES IN SILICON 7 2.2 GENERATION AND RECOMBINATION OF EXCESS CARRIERS 16 2.3 RECOMBINATION MECHANISMS 17 2.3.1 INTRINSIC RECOMBINATION 17 2.3.2 RECOMBINATION THROUGH BULK DEFECTS (SHOCKLEY-READ- HALL) 20 2.3.3 SURFACE RECOMBINATION 24 2.4 EFFECTIVE LIFETIME 25 3 LIFETIME SPECTROSCOPY 27 3.1 INJECTION-DEPENDENT LIFETIME SPECTROSCOPY 27 3.2 TEMPERATURE-DEPENDENT LIFETIME SPECTROSCOPY 28 3.3 DEFECT PARAMETER SOLUTION SURFACE 30 4 LIFETIME MEASUREMENT TECHNIQUES 31 4.1 MICROWAVE-DETECTED PHOTOCONDUCTANCE DECAY 31 4.1.1 MEASUREMENT PRINCIPLE 31 4.1.2 MEASUREMENT SETUP 34 4.2 QUASI-STEADY-STATE PHOTOCONDUCTANCE 36 4.2.1 MEASUREMENT PRINCIPLE 36 4.2.2 MEASUREMENT SETUP 38 4.3 TRANSIENT PHOTOCONDUCTANCE 40 4.3.1 MEASUREMENT PRINCIPLE 40 4.3.2 MEASUREMENT SETUP 40 BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/993731333 DIGITALISIERT DURCH 7.2 SAMPLE PREPARATION 93 0 TABLE OF CONTENTS 4.4 QUASI-STEADY-STATE PHOTOLUMINESCENCE 41 4.4.1 MEASUREMENT PRINCIPLE 41 4.4.2 CALIBRATION OF THE MEASUREMENT SIGNALS 42 4.4.3 MEASUREMENT SETUP 44 4.5 COMPARISON OF MEASUREMENT ARTIFACTS IN PHOTOCONDUCTANCE- AND PHOTOLUMINESCENCE-BASED MEASUREMENTS 46 4.5.1 MINORITY CARRIER TRAPPING 47 4.5.2 DEPLETION REGION MODULATION 50 4.6 COMPARISON OF THE INTRODUCED LIFETIME MEASUREMENT TECHNIQUES 52 DEEP-LEVEL TRANSIENT SPECTROSCOPY 53 5.1 BASIC PRINCIPLE 53 5.2 PRACTICAL ISSUES 62 5.3 MEASUREMENT SETUP 64 PHOTOLUMINESCENCE LIFETIME SPECTROSCOPY 67 6.1 ENHANCEMENT OF PHOTOLUMINESCENCE MEASUREMENT SETUP 67 6.2 TEMPERATURE-DEPENDENT REFLECTIONS 69 6.3 TEMPERATURE-DEPENDENT PHOTON REABSORPTION 70 6.3.1 GENERALIZED PLANCK RADIATION LAW 71 6.3.2 EMITTED PHOTON FLUX 73 6.3.3 ABSORPTION COEFFICIENT 75 6.3.4 EMITTED PHOTOLUMINESCENCE SPECTRUM 79 6.3.5 CORRECTION METHOD FOR THE PHOTOLUMINESCENCE CALIBRATION 83 6.4 COEFFICIENT OF RADIATIVE RECOMBINATION 85 6.4.1 TEMPERATURE-DEPENDENCE 85 6.4.2 INJECTION-DEPENDENCE 87 6.4.3 DETERMINATION USING TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE 88 MANGANESE IN/7-TYPE SILICON 91 7.1 ELECTRICAL PROPERTIES OF MANGANESE IN SILICON 91 10.3.1 DEEP-LEVEL TRANSIENT SPECTROSCOPY (DLTS) 134 0 TABLE OF CONTENTS III 7.3 EXPERIMENTAL RESULTS 94 7.3.1 INITIAL QUASI-STEADY-STATE PHOTOCONDUCTANCE (QSS-PC) MEASUREMENTS 94 7.3.2 DEEP-LEVEL TRANSIENT SPECTROSCOPY (DLTS) 95 7.3.3 INJECTION-DEPENDENT LIFETIME SPECTROSCOPY (IDLS) 98 7.3.4 TEMPERATURE-DEPENDENT LIFETIME SPECTROSCOPY (TDLS) 100 7.4 ASSOCIATION TIME CONSTANT MEASUREMENT 103 7.5 CONCLUSION 107 8 TITANIUM INP-TYPE SILICON 109 8.1 ELECTRICAL PROPERTIES OF TITANIUM IN SILICON 109 8.2 SAMPLE PREPARATION 110 8.3 EXPERIMENTAL RESULTS 110 8.3.1 EFFECT OF PHOTON REABSORPTION ILL 8.3.2 TEMPERATURE-DEPENDENT LIFETIME SPECTROSCOPY (TDLS) 112 8.3.3 INJECTION-DEPENDENT LIFETIME SPECTROSCOPY (IDLS) 115 8.3.4 IN-DEPTH ANALYSIS 116 8.4 CONCLUSION 123 9 ALUMINUM IN/VTYPE SILICON 125 9.1 ELECTRIC PROPERTIES OF ALUMINUM IN SILICON 125 9.2 SAMPLE PREPARATION 125 9.3 EXPERIMENTAL RESULTS 126 9.3.1 DEEP-LEVEL TRANSIENT SPECTROSCOPY (DLTS) 126 9.3.2 INJECTION-DEPENDENT LIFETIME SPECTROSCOPY (IDLS) 129 9.4 CONCLUSION 130 10 TUNGSTEN INP-TYPE SILICON 133 10.1 ELECTRICAL PROPERTIES OF TUNGSTEN IN SILICON 133 10.2 SAMPLE PREPARATION 133 10.3 EXPERIMENTAL RESULTS 134 17 DANKSAGUNG 187 IV 0 TABLE OF CONTENTS 10.3.2 TEMPERATURE- AND INJECTION-DEPENDENT LIFETIME SPECTROSCOPY (R-IDLS) 136 10.4 CONCLUSION 137 11 IN-DEPTH COMPARISON 139 11.1 PHOTOCONDUCTANCE VS. PHOTOLUMINESCENCE 139 11.1.1 COMPARISON ON HIGH EXCESS CARRIER LIFETIME SAMPLES 139 11.1.2 COMPARISON ON LOW EXCESS CARRIER LIFETIME SAMPLES 141 11.1.3 CONCLUSION 144 11.1.4 BEST PRACTICE 145 11.2 LIFETIME SPECTROSCOPY VS. DEEP-LEVEL TRANSIENT SPECTROSCOPY 147 11.2.1 PHYSICAL PROPERTIES OF DEFECT PARAMETERS 147 11.2.2 THEORETICAL COMPARISON OF LIFETIME SPECTROSCOPY AND DEEP- LEVEL TRANSIENT SPECTROSCOPY 150 11.3 SUMMARY AND COMPARISON OF EXPERIMENTAL RESULTS 153 12 CONCLUSIONS 157 13 BIBLIOGRAPHY 161 14 APPENDIX 171 14.1 ABBREVIATIONS 171 14.2 GLOSSARY 173 14.3 PHYSICAL CONSTANTS 176 15 LIST OF PUBLICATIONS 177 15.1 REFEREED JOURNAL PAPERS 177 15.2 REFEREED PAPERS PRESENTED AT INTERNATIONAL CONFERENCES 178 15.3 DIPLOMA THESIS 180 15.4 ORAL PRESENTATIONS 180 15.5 PATENT APPLICATIONS 181 16 DEUTSCHE ZUSAMMENFASSUNG 183
any_adam_object	1
author	Roth, Thomas 1967-
author_GND	(DE-588)120544350
author_facet	Roth, Thomas 1967-
author_role	aut
author_sort	Roth, Thomas 1967-
author_variant	t r tr
building	Verbundindex
bvnumber	BV035482317
ctrlnum	(OCoLC)644610726 (DE-599)DNB993731333
dewey-full	537.6221
dewey-hundreds	500 - Natural sciences and mathematics
dewey-ones	537 - Electricity and electronics
dewey-raw	537.6221
dewey-search	537.6221
dewey-sort	3537.6221
dewey-tens	530 - Physics
discipline	Physik
edition	1. Aufl.
format	Thesis Book
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01635nam a2200445 c 4500</leader><controlfield tag="001">BV035482317</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20090713 </controlfield><controlfield tag="007">t\|</controlfield><controlfield tag="008">090512s2009 gw m\|\|\| 00\|\|\| eng d</controlfield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">09,N19,0689</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">993731333</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783868530360</subfield><subfield code="c">PB. : EUR 39.00</subfield><subfield code="9">978-3-86853-036-0</subfield></datafield><datafield tag="024" ind1="3" ind2=" "><subfield code="a">9783868530360</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)644610726</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DNB993731333</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">XA-DE-BY</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-12</subfield><subfield code="a">DE-91</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">537.6221</subfield><subfield code="2">22/ger</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">530</subfield><subfield code="2">sdnb</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Roth, Thomas</subfield><subfield code="d">1967-</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)120544350</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Analysis of electrically active defects in silicon for solar cells</subfield><subfield code="c">Thomas Roth</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">1. Aufl.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">München</subfield><subfield code="b">Dr. Hut</subfield><subfield code="c">2009</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">IV, 188 S.</subfield><subfield code="c">210 mm x 148 mm, 300 gr.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Physik</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="a">Zugl.: Konstanz, Univ., Diss., 2008</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Gitterbaufehler</subfield><subfield code="0">(DE-588)4125030-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Gitterbaufehler</subfield><subfield code="0">(DE-588)4125030-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">DNB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017538840&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-017538840</subfield></datafield></record></collection>
genre	(DE-588)4113937-9 Hochschulschrift gnd-content
genre_facet	Hochschulschrift
id	DE-604.BV035482317
illustrated	Not Illustrated
indexdate	2024-12-20T13:36:02Z
institution	BVB
isbn	9783868530360
language	English
oai_aleph_id	oai:aleph.bib-bvb.de:BVB01-017538840
oclc_num	644610726
open_access_boolean
owner	DE-12 DE-91 DE-BY-TUM
owner_facet	DE-12 DE-91 DE-BY-TUM
physical	IV, 188 S. 210 mm x 148 mm, 300 gr.
publishDate	2009
publishDateSearch	2009
publishDateSort	2009
publisher	Dr. Hut
record_format	marc
series2	Physik
spellingShingle	Roth, Thomas 1967- Analysis of electrically active defects in silicon for solar cells Silicium (DE-588)4077445-4 gnd Gitterbaufehler (DE-588)4125030-8 gnd
subject_GND	(DE-588)4077445-4 (DE-588)4125030-8 (DE-588)4113937-9
title	Analysis of electrically active defects in silicon for solar cells
title_auth	Analysis of electrically active defects in silicon for solar cells
title_exact_search	Analysis of electrically active defects in silicon for solar cells
title_full	Analysis of electrically active defects in silicon for solar cells Thomas Roth
title_fullStr	Analysis of electrically active defects in silicon for solar cells Thomas Roth
title_full_unstemmed	Analysis of electrically active defects in silicon for solar cells Thomas Roth
title_short	Analysis of electrically active defects in silicon for solar cells
title_sort	analysis of electrically active defects in silicon for solar cells
topic	Silicium (DE-588)4077445-4 gnd Gitterbaufehler (DE-588)4125030-8 gnd
topic_facet	Silicium Gitterbaufehler Hochschulschrift
url	http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017538840&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
work_keys_str_mv	AT roththomas analysisofelectricallyactivedefectsinsiliconforsolarcells

Availability

Order (Login required)

Table of Contents
Order paper/chapter scan

Closed Stacks

Holdings details from Bibliotheksmagazin
Call Number:	0001 2009 A 5156
Copy 1	Available for loan On Shelf