Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits:
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis/Dissertation Book |
| Language: | English |
| Published: |
Dresden
TUDpress
2006
|
| Subjects: | |
| Physical Description: | XXI, 150 S. graph. Darst. |
| ISBN: | 9783940046017 3940046019 |
Staff View
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV026592860 | ||
| 003 | DE-604 | ||
| 005 | 20110228 | ||
| 007 | t| | ||
| 008 | 110326s2006 xx d||| m||| 00||| eng d | ||
| 015 | |a 07,H05,1730 |2 dnb | ||
| 016 | 7 | |a 983439613 |2 DE-101 | |
| 020 | |a 9783940046017 |9 978-3-940046-01-7 | ||
| 020 | |a 3940046019 |9 3-940046-01-9 | ||
| 035 | |a (OCoLC)180737701 | ||
| 035 | |a (DE-599)DNB983439613 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-188 | ||
| 082 | 0 | |a 621.381528 |2 22/ger | |
| 084 | |a 620 |2 sdnb | ||
| 100 | 1 | |a Hung, Tran Hoang |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits |c Tran Hoang Hung |
| 264 | 1 | |a Dresden |b TUDpress |c 2006 | |
| 300 | |a XXI, 150 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 502 | |a Zugl.: Dresden, Techn. Univ., Diss., 2006 | ||
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Modell |0 (DE-588)4039798-1 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Physikalische Eigenschaft |0 (DE-588)4134738-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Heterobipolartransistor |0 (DE-588)4254091-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Kleinsignalverhalten |0 (DE-588)4164165-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Germanium |0 (DE-588)4135644-5 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 0 | 1 | |a Germanium |0 (DE-588)4135644-5 |D s |
| 689 | 0 | 2 | |a Heterobipolartransistor |0 (DE-588)4254091-4 |D s |
| 689 | 0 | 3 | |a Kleinsignalverhalten |0 (DE-588)4164165-6 |D s |
| 689 | 0 | 4 | |a Physikalische Eigenschaft |0 (DE-588)4134738-9 |D s |
| 689 | 0 | 5 | |a Modell |0 (DE-588)4039798-1 |D s |
| 689 | 0 | |5 DE-604 | |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-022149886 | |
Record in the Search Index
| _version_ | 1818972403909263360 |
|---|---|
| any_adam_object | |
| author | Hung, Tran Hoang |
| author_facet | Hung, Tran Hoang |
| author_role | aut |
| author_sort | Hung, Tran Hoang |
| author_variant | t h h th thh |
| building | Verbundindex |
| bvnumber | BV026592860 |
| ctrlnum | (OCoLC)180737701 (DE-599)DNB983439613 |
| dewey-full | 621.381528 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381528 |
| dewey-search | 621.381528 |
| dewey-sort | 3621.381528 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Maschinenbau / Maschinenwesen Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Thesis Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01822nam a2200493 c 4500</leader><controlfield tag="001">BV026592860</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20110228 </controlfield><controlfield tag="007">t|</controlfield><controlfield tag="008">110326s2006 xx d||| m||| 00||| eng d</controlfield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">07,H05,1730</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">983439613</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783940046017</subfield><subfield code="9">978-3-940046-01-7</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3940046019</subfield><subfield code="9">3-940046-01-9</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)180737701</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DNB983439613</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-188</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.381528</subfield><subfield code="2">22/ger</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">620</subfield><subfield code="2">sdnb</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Hung, Tran Hoang</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits</subfield><subfield code="c">Tran Hoang Hung</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Dresden</subfield><subfield code="b">TUDpress</subfield><subfield code="c">2006</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XXI, 150 S.</subfield><subfield code="b">graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="a">Zugl.: Dresden, Techn. Univ., Diss., 2006</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Modell</subfield><subfield code="0">(DE-588)4039798-1</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Physikalische Eigenschaft</subfield><subfield code="0">(DE-588)4134738-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Heterobipolartransistor</subfield><subfield code="0">(DE-588)4254091-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Kleinsignalverhalten</subfield><subfield code="0">(DE-588)4164165-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Germanium</subfield><subfield code="0">(DE-588)4135644-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Germanium</subfield><subfield code="0">(DE-588)4135644-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Heterobipolartransistor</subfield><subfield code="0">(DE-588)4254091-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Kleinsignalverhalten</subfield><subfield code="0">(DE-588)4164165-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="4"><subfield code="a">Physikalische Eigenschaft</subfield><subfield code="0">(DE-588)4134738-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="5"><subfield code="a">Modell</subfield><subfield code="0">(DE-588)4039798-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-022149886</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV026592860 |
| illustrated | Illustrated |
| indexdate | 2024-12-20T15:07:43Z |
| institution | BVB |
| isbn | 9783940046017 3940046019 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-022149886 |
| oclc_num | 180737701 |
| open_access_boolean | |
| owner | DE-188 |
| owner_facet | DE-188 |
| physical | XXI, 150 S. graph. Darst. |
| publishDate | 2006 |
| publishDateSearch | 2006 |
| publishDateSort | 2006 |
| publisher | TUDpress |
| record_format | marc |
| spelling | Hung, Tran Hoang Verfasser aut Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits Tran Hoang Hung Dresden TUDpress 2006 XXI, 150 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Zugl.: Dresden, Techn. Univ., Diss., 2006 Silicium (DE-588)4077445-4 gnd rswk-swf Modell (DE-588)4039798-1 gnd rswk-swf Physikalische Eigenschaft (DE-588)4134738-9 gnd rswk-swf Heterobipolartransistor (DE-588)4254091-4 gnd rswk-swf Kleinsignalverhalten (DE-588)4164165-6 gnd rswk-swf Germanium (DE-588)4135644-5 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Silicium (DE-588)4077445-4 s Germanium (DE-588)4135644-5 s Heterobipolartransistor (DE-588)4254091-4 s Kleinsignalverhalten (DE-588)4164165-6 s Physikalische Eigenschaft (DE-588)4134738-9 s Modell (DE-588)4039798-1 s DE-604 |
| spellingShingle | Hung, Tran Hoang Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits Silicium (DE-588)4077445-4 gnd Modell (DE-588)4039798-1 gnd Physikalische Eigenschaft (DE-588)4134738-9 gnd Heterobipolartransistor (DE-588)4254091-4 gnd Kleinsignalverhalten (DE-588)4164165-6 gnd Germanium (DE-588)4135644-5 gnd |
| subject_GND | (DE-588)4077445-4 (DE-588)4039798-1 (DE-588)4134738-9 (DE-588)4254091-4 (DE-588)4164165-6 (DE-588)4135644-5 (DE-588)4113937-9 |
| title | Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits |
| title_auth | Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits |
| title_exact_search | Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits |
| title_full | Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits Tran Hoang Hung |
| title_fullStr | Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits Tran Hoang Hung |
| title_full_unstemmed | Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits Tran Hoang Hung |
| title_short | Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits |
| title_sort | physics based analytical modeling of sige heterojunction bipolar transistors for high speed integrated circuits |
| topic | Silicium (DE-588)4077445-4 gnd Modell (DE-588)4039798-1 gnd Physikalische Eigenschaft (DE-588)4134738-9 gnd Heterobipolartransistor (DE-588)4254091-4 gnd Kleinsignalverhalten (DE-588)4164165-6 gnd Germanium (DE-588)4135644-5 gnd |
| topic_facet | Silicium Modell Physikalische Eigenschaft Heterobipolartransistor Kleinsignalverhalten Germanium Hochschulschrift |
| work_keys_str_mv | AT hungtranhoang physicsbasedanalyticalmodelingofsigeheterojunctionbipolartransistorsforhighspeedintegratedcircuits |