Availability: Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits

Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits:

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Bibliographic Details
Main Author:	Tran-Hoang-Hung (Author)
Format:	Thesis/Dissertation Book
Language:	English
Published:	Dresden TUDpress 2007
Subjects:	Heterobipolartransistor Kleinsignalverhalten Silicium Germanium Modell Physikalische Eigenschaft Hochschulschrift
Physical Description:	XXI, 150 S. graph. Darst. 21 cm
ISBN:	9783940046017 3940046019

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Record in the Search Index

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discipline	Maschinenbau / Maschinenwesen Elektrotechnik / Elektronik / Nachrichtentechnik
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indexdate	2024-12-20T13:03:33Z
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isbn	9783940046017 3940046019
language	English
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physical	XXI, 150 S. graph. Darst. 21 cm
publishDate	2007
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publisher	TUDpress
record_format	marc
spelling	Tran-Hoang-Hung Verfasser (DE-588)132748401 aut Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits Tran Hoang Hung Physics-based analytical modeling of SiGe heterojunction bipolar transistors for high-speed integrated circuits Dresden TUDpress 2007 XXI, 150 S. graph. Darst. 21 cm txt rdacontent n rdamedia nc rdacarrier Zugl.: Dresden, Techn. Univ., Diss., 2006 Heterobipolartransistor (DE-588)4254091-4 gnd rswk-swf Kleinsignalverhalten (DE-588)4164165-6 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Germanium (DE-588)4135644-5 gnd rswk-swf Modell (DE-588)4039798-1 gnd rswk-swf Physikalische Eigenschaft (DE-588)4134738-9 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Silicium (DE-588)4077445-4 s Germanium (DE-588)4135644-5 s Heterobipolartransistor (DE-588)4254091-4 s Kleinsignalverhalten (DE-588)4164165-6 s Physikalische Eigenschaft (DE-588)4134738-9 s Modell (DE-588)4039798-1 s DE-604
spellingShingle	Tran-Hoang-Hung Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits Heterobipolartransistor (DE-588)4254091-4 gnd Kleinsignalverhalten (DE-588)4164165-6 gnd Silicium (DE-588)4077445-4 gnd Germanium (DE-588)4135644-5 gnd Modell (DE-588)4039798-1 gnd Physikalische Eigenschaft (DE-588)4134738-9 gnd
subject_GND	(DE-588)4254091-4 (DE-588)4164165-6 (DE-588)4077445-4 (DE-588)4135644-5 (DE-588)4039798-1 (DE-588)4134738-9 (DE-588)4113937-9
title	Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits
title_alt	Physics-based analytical modeling of SiGe heterojunction bipolar transistors for high-speed integrated circuits
title_auth	Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits
title_exact_search	Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits
title_full	Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits Tran Hoang Hung
title_fullStr	Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits Tran Hoang Hung
title_full_unstemmed	Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits Tran Hoang Hung
title_short	Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits
title_sort	physics based analytical modeling of sige heterojunction bipolar transistors for high speed integrated circuits
topic	Heterobipolartransistor (DE-588)4254091-4 gnd Kleinsignalverhalten (DE-588)4164165-6 gnd Silicium (DE-588)4077445-4 gnd Germanium (DE-588)4135644-5 gnd Modell (DE-588)4039798-1 gnd Physikalische Eigenschaft (DE-588)4134738-9 gnd
topic_facet	Heterobipolartransistor Kleinsignalverhalten Silicium Germanium Modell Physikalische Eigenschaft Hochschulschrift
work_keys_str_mv	AT tranhoanghung physicsbasedanalyticalmodelingofsigeheterojunctionbipolartransistorsforhighspeedintegratedcircuits

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