Saved in:
| Main Authors: | , |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
Boston [u.a.]
Kluwer
1993
|
| Series: | The Kluwer international series in engineering and computer science
227 |
| Subjects: | |
| Item Description: | Literaturangaben |
| Physical Description: | XVI, 212 S. graph. Darst. |
| ISBN: | 079239352X |
Staff View
MARC
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| 245 | 1 | 0 | |a Hot-carrier reliability of MOS VLSI circuits |c by Yusuf Leblebici ; Sung-Mo (Steve) Kang |
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| 650 | 4 | |a Integrated circuits |x Very large scale integration |x Defects |x Mathematical models | |
| 650 | 4 | |a Metal oxide semiconductors |x Reliability |x Mathematical models | |
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Record in the Search Index
| _version_ | 1818963654543933440 |
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| any_adam_object | |
| author | Leblebici, Yusuf Kang, Songmo |
| author_facet | Leblebici, Yusuf Kang, Songmo |
| author_role | aut aut |
| author_sort | Leblebici, Yusuf |
| author_variant | y l yl s k sk |
| building | Verbundindex |
| bvnumber | BV022128643 |
| callnumber-first | T - Technology |
| callnumber-label | TK7874 |
| callnumber-raw | TK7874 |
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| callnumber-sort | TK 47874 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| ctrlnum | (OCoLC)27937993 (DE-599)BVBBV022128643 |
| dewey-full | 621.39/5 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.39/5 |
| dewey-search | 621.39/5 |
| dewey-sort | 3621.39 15 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV022128643 |
| illustrated | Illustrated |
| indexdate | 2024-12-20T12:48:39Z |
| institution | BVB |
| isbn | 079239352X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-015343271 |
| oclc_num | 27937993 |
| open_access_boolean | |
| owner | DE-706 |
| owner_facet | DE-706 |
| physical | XVI, 212 S. graph. Darst. |
| publishDate | 1993 |
| publishDateSearch | 1993 |
| publishDateSort | 1993 |
| publisher | Kluwer |
| record_format | marc |
| series | The Kluwer international series in engineering and computer science |
| series2 | The Kluwer international series in engineering and computer science |
| spelling | Leblebici, Yusuf Verfasser aut Hot-carrier reliability of MOS VLSI circuits by Yusuf Leblebici ; Sung-Mo (Steve) Kang Boston [u.a.] Kluwer 1993 XVI, 212 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier The Kluwer international series in engineering and computer science 227 Literaturangaben Circuits intégrés à très grande échelle ram Porteurs chauds ram Mathematisches Modell Hot carriers Reliability Mathematical models Integrated circuits Very large scale integration Defects Mathematical models Metal oxide semiconductors Reliability Mathematical models Zuverlässigkeit (DE-588)4059245-5 gnd rswk-swf MOS (DE-588)4130209-6 gnd rswk-swf Mathematisches Modell (DE-588)4114528-8 gnd rswk-swf Integrierte Schaltung (DE-588)4027242-4 gnd rswk-swf VLSI (DE-588)4117388-0 gnd rswk-swf Heißes Elektron (DE-588)4159455-1 gnd rswk-swf Integrierte Schaltung (DE-588)4027242-4 s DE-604 Zuverlässigkeit (DE-588)4059245-5 s Mathematisches Modell (DE-588)4114528-8 s Heißes Elektron (DE-588)4159455-1 s MOS (DE-588)4130209-6 s VLSI (DE-588)4117388-0 s 1\p DE-604 Kang, Songmo Verfasser aut The Kluwer international series in engineering and computer science 227 (DE-604)BV023545171 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Leblebici, Yusuf Kang, Songmo Hot-carrier reliability of MOS VLSI circuits The Kluwer international series in engineering and computer science Circuits intégrés à très grande échelle ram Porteurs chauds ram Mathematisches Modell Hot carriers Reliability Mathematical models Integrated circuits Very large scale integration Defects Mathematical models Metal oxide semiconductors Reliability Mathematical models Zuverlässigkeit (DE-588)4059245-5 gnd MOS (DE-588)4130209-6 gnd Mathematisches Modell (DE-588)4114528-8 gnd Integrierte Schaltung (DE-588)4027242-4 gnd VLSI (DE-588)4117388-0 gnd Heißes Elektron (DE-588)4159455-1 gnd |
| subject_GND | (DE-588)4059245-5 (DE-588)4130209-6 (DE-588)4114528-8 (DE-588)4027242-4 (DE-588)4117388-0 (DE-588)4159455-1 |
| title | Hot-carrier reliability of MOS VLSI circuits |
| title_auth | Hot-carrier reliability of MOS VLSI circuits |
| title_exact_search | Hot-carrier reliability of MOS VLSI circuits |
| title_full | Hot-carrier reliability of MOS VLSI circuits by Yusuf Leblebici ; Sung-Mo (Steve) Kang |
| title_fullStr | Hot-carrier reliability of MOS VLSI circuits by Yusuf Leblebici ; Sung-Mo (Steve) Kang |
| title_full_unstemmed | Hot-carrier reliability of MOS VLSI circuits by Yusuf Leblebici ; Sung-Mo (Steve) Kang |
| title_short | Hot-carrier reliability of MOS VLSI circuits |
| title_sort | hot carrier reliability of mos vlsi circuits |
| topic | Circuits intégrés à très grande échelle ram Porteurs chauds ram Mathematisches Modell Hot carriers Reliability Mathematical models Integrated circuits Very large scale integration Defects Mathematical models Metal oxide semiconductors Reliability Mathematical models Zuverlässigkeit (DE-588)4059245-5 gnd MOS (DE-588)4130209-6 gnd Mathematisches Modell (DE-588)4114528-8 gnd Integrierte Schaltung (DE-588)4027242-4 gnd VLSI (DE-588)4117388-0 gnd Heißes Elektron (DE-588)4159455-1 gnd |
| topic_facet | Circuits intégrés à très grande échelle Porteurs chauds Mathematisches Modell Hot carriers Reliability Mathematical models Integrated circuits Very large scale integration Defects Mathematical models Metal oxide semiconductors Reliability Mathematical models Zuverlässigkeit MOS Integrierte Schaltung VLSI Heißes Elektron |
| volume_link | (DE-604)BV023545171 |
| work_keys_str_mv | AT leblebiciyusuf hotcarrierreliabilityofmosvlsicircuits AT kangsongmo hotcarrierreliabilityofmosvlsicircuits |