Introduction to electronic devices:
Gespeichert in:
| Beteilige Person: | |
|---|---|
| Format: | Buch |
| Sprache: | Englisch |
| Veröffentlicht: |
New York u.a.
Wiley
1996
|
| Schlagwörter: | |
| Links: | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008456668&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| Umfang: | XXV, 577 S. Ill., zahlr. graph. Darst. |
| ISBN: | 0471103489 |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV012461997 | ||
| 003 | DE-604 | ||
| 005 | 19990317 | ||
| 007 | t| | ||
| 008 | 990317s1996 xx ad|| |||| 00||| eng d | ||
| 020 | |a 0471103489 |9 0-471-10348-9 | ||
| 035 | |a (OCoLC)32241777 | ||
| 035 | |a (DE-599)BVBBV012461997 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-706 |a DE-355 | ||
| 050 | 0 | |a TK7870 | |
| 082 | 0 | |a 621.3815/2 |2 20 | |
| 084 | |a ZN 4300 |0 (DE-625)157383: |2 rvk | ||
| 100 | 1 | |a Shur, Michael |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Introduction to electronic devices |c Michael Shur |
| 264 | 1 | |a New York u.a. |b Wiley |c 1996 | |
| 300 | |a XXV, 577 S. |b Ill., zahlr. graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 4 | |a Electronic apparatus and appliances | |
| 650 | 0 | 7 | |a Elektronisches Bauelement |0 (DE-588)4014360-0 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Elektronisches Bauelement |0 (DE-588)4014360-0 |D s |
| 689 | 0 | |5 DE-604 | |
| 856 | 4 | 2 | |m Digitalisierung UB Regensburg |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008456668&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-008456668 | |
Datensatz im Suchindex
| _version_ | 1819384584697020416 |
|---|---|
| adam_text | Contents
LIST OF SYMBOLS
XIX
INTRODUCTION
1
Bibliography.
16
Review questions.
16
CHAPTER
1.
BASICS OF QUANTUM MECHANICS
18
1.1.
Introduction.
18
1.2.
Quantum mechanical concepts.
18
1.2.1.
Wave particle duality and Uncertainty Principle.
18
1.2.2.
Schwdinger wave equation.
25
1.2.3.
Infinitely deep one-dimensional potential well.
27
*1.2.4. Other potential wells.
30
*1.3. Tunneling.
38
1.4.
Atomic states and chemical bonds.
47
1.4.1.
Hydrogen atom.
47
1.4.2.
Many electron atoms and the Periodic Table.
49
1.4.3.
Chemical bonds.
53
References.
55
Bibliography.
55
Review questions.
56
Problems.
58
xiii
xiv Contents
CHAPTER
2. BASICS
OF
SOLID STATE
PHYSICS
61
2.1.
Introduction.
61
2.2.
Crystal Structure.
61
2.2.1.
Crystal symmetry.
61
*2.2.2. Miller indices.
65
2.2.3.
Ternary and quaternary compounds.
68
2.3.
Energy bands. Dielectrics, semiconductors, and metals.
72
2.3.1.
Energy bands.
72
2.3.2.
Effective mass.
74
*2.3.3. Electric field distributions in a metal, a dielectric, and a
semiconductor.
76
*2.3.4. Brillouin zone.
78
*2.3.5. E(k) dependence for Si, Ge,
ПІ
-V,
and most
П
-VI
semiconductors.
83
2.4.
Distribution functions and densities of states.
90
2.4.1.
Distribution
f
unction and electron concentration.
90
*2.4.2. Density of states.
93
*2.5. Densities of states for two- and one-dimensional electron gases.
99
*2.5.1. Two-dimensional electron gas.
99
*2.5.2. One-dimensional electron gas.
103
References.
108
Bibliography.
108
Review questions.
109
Problems.
113
CHAPTER
3.
ELECTRONS AND HOLES IN SEMICONDUCTORS
117
3.1.
Introduction.
117
3.2.
Electrons and holes.
117
3.3.
Electron and hole concentrations.
122
3.4.
Intrinsic, doped, and compensated semiconductors.
127
ЗА.
1.
Donors and acceptors.
ITI
3.4.2.
Electron and hole concentrations.
131
3.5.
Electron and hole mobilities and drift velocities.
137
3.6.
Diffusion.
145
3.7.
Basic semiconductor equations.
149
Contents xv
3.7.1.
Drift-diffusion model.
149
3.7.2. Quasineutral
semiconductor.
156
3.7.3.
Displacement and total current densities.
157
*3.
7.4.
More advanced models.
158
3.8.
Quasi-Fermi levels. Generation and recombination.
160
3.8.1.
Quasi-Fermi levels.
160
3.8.2.
Generation.
163
3.8.3.
Recombination and diffusion equation.
166
*3.9. Hall effect and magnetoresistance.
172
*3.9.1. Hall effect. Ill
*3.9.2. Hall angle and geometric magnetoresistance.
176
References.
178
Bibliography.
178
Review questions.
179
Problems.
183
CHAPTER
4.
DIODES AND CONTACTS
188
4.1.
Introduction.
188
4.2.
p
-п
junctions at zero bias.
188
4.3.
p
-п
junctions under bias.
199
4.3.1.
The law of the junction.
199
4.3.2.
Minority carrier profiles in neutral regions.
202
4.3.3.
Ideal Diode Equation.
203
4.3.4.
Short
Р+-П
diode.
205
4.3.5.
Generation and recombination currents.
206
4.4.
Depletion and diffusion capacitances.
214
4.5.
Junction breakdown.
223
*4.6. Tunnel diodes.
228
4.7.
Circuit modeling
oîp-n
junction diodes.
235
4.8.
Schottky diodes.
241
4.8.1.
Metal-semiconductor contact at zero bias.
241
4.8.2.
Schottky diode under bias.
243
4.8.3.
Thermionic emission.
245
xvi
Contents
4.8.4.
Thermionic-field emission.
247
4.8.5.
Small-signal equivalent circuit and applications.
250
4.8.6.
SPICE simulation ofSchottky diodes.
253
4.9.
Ohmic contacts.
256
*4.
10.
Heterojunction diodes.
261
*4.
11.
Gunn diodes.
268
♦4.12.
IMP ATT and TRAPATT diodes.
275
*4.
13.
Computer simulation of semiconductor devices.
278
References.
282
Bibliography.
282
Review questions.
283
Problems.
286
CHAPTER
5.
BIPOLAR JUNCTION TRANSISTORS
297
5.1.
Principle of operation.
297
5.1.1.
Bipolar Junction Transistor operation.
297
5.1.2.
Minority carrier profiles.
301
5.1.3.
BIT as an amplifier.
306
5.1.4.
BJT modes of operation.
312
5.2.
BJT modeling.
317
5.2.1.
Ebers-Moll model.
317
5.2.2.
Gummel-Poon model.
322
5.2.3.
BJT simulation using SPICE.
324
5.3.
Breakdown in bipolar junction transistors.
331
5.3.1.
Avalanche breakdown.
331
5.3.2.
Punch-through breakdown.
ЪЪА
5.4.
Small signal equivalent circuits.
337
5.5.
Small signal operation and cutoff frequencies.
344
*5.6. Heterojunction Bipolar Transistors.
354
References.
357
Bibliography.
357
Review questions.
358
Problems.
361
Contents xvii
CHAPTER
6.
MOSFETs
363
6.1.
Principle of operation.
363
6.2.
Charge control models.
369
6.3.
MOSFET threshold voltage.
375
6.4.
MOSFET modeling.
384
6.4.1.
Gradual Channel Approximation.
384
6.4.2.
Constant mobility model.
386
6.4.3.
Velocity saturation model.
389
6.4.4.
Drain and source series resistances.
391
6.4.5.
Capacitance-voltage characteristics.
394
6.4.6.
MOSFET models in SPICE.
396
6.5.
FET
small signal equivalent circuit.
399
6.6.
CMOS.
403
*6.7. Physical constraints on MOSFET performance
408
References.
411
Bibliography.
411
Review questions
. 413
Problems.
415
CHAPTER
7.
COMPOUND SEMICONDUCTOR FETs and THIN FILM
TRANSISTORS (TFTs)
420
*7.1. Introduction.
420
*7.2. Compound semiconductor FETs.
422
*7.2.1. Applications of compound semiconductor technology.
428
*7.2.2. MESFETs.
422
*7.2.3. Heterostructure Field Effect Transistors (HFETs).
428
*7.2.4. Gate Leakage Current.
431
*7.3. Thin Film Transistors.
434
*7.3.
1.
Amorphous silicon andpolysilicon.
АЪА
*7.3.2. Amorphous Silicon Thin Film Transistors.
436
*7.3.3. Polysilicon Thin Film Transistors.
441
References.
444
Bibliography.
444
xviii Contents
Review
questions.
445
Problems. 446
CHAPTER
8.
PHOTONIC
DEVICES 448
8.1.
Electromagnetic
spectram
and optical properties of solids.
448
8.2.
Solar cells.
456
*8.3. Photodetectors.
466
*8.3.1. Photoconductor.
466
*8.3.2. p-i-n
photodiode.
469
*8.
3.3.
Avalanche Photo Diode
(ÅPD).
471
*8.3.4.
Phototransistor.
472
*8.3.5. Metal-Semiconductor-Metal Photodetector. All
8.4.
Electroluminescence and Light-Emitting Diodes.
474
8.5.
Lasers.
480
*8.6. Integrated optoelectronics.
488
*8.7. Displays.
493
*& 7.1.
Cathode Ray Tube.
493
*8.
7.2.
Liquid Crystal Displays.
494
References.
500
Bibliography.
500
Review questions.
501
Problems.
502
CHAPTERS. DEVICE FABRICATION AND NOVEL DEVICES
505
*9.1. Introduction.
505
*9.2. Material growth and device fabrication.
508
*9.2.
1.
Bulk material growth.
508
*9.2.2. Epitaxial growth.
510
*9.2.3. Ion Implantation.
512
*9.2.4. Lithography and
1С
fabrication.
513
*9.3. Hot Electron Transistors.
516
*9.4.
Superlattice
devices.
518
*9.5. Resonant tunneling devices.
521
Contents xix
*9.6. Heterodimensional
devices.
523
*9.7. Wide band
gap semiconductor materials and devices.
527
*9.8. Superconducting devices.
531
*9.9. Single electronics.
534
References.
537
Bibliography.
537
Review questions.
538
Problems.
539
APPENDICES
A.I. Units.
542
A.2. Physical constants.
543
A.3. Periodic Table.
544
A.4. Parameters of Gummel
Poon
model.
545
A.5
.
Default SPICE parameters for MOSFETs.
551
A.6. Properties of silicon.
553
A.7. Properties of gallium arsenide.
554
A.8. Downloading student version of AIM-Spice.
555
A.9. Brief history of semiconductor devices.
556
GLOSSARY
558
INDEX
567
|
| any_adam_object | 1 |
| author | Shur, Michael |
| author_facet | Shur, Michael |
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| illustrated | Illustrated |
| indexdate | 2024-12-20T10:30:42Z |
| institution | BVB |
| isbn | 0471103489 |
| language | English |
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| spellingShingle | Shur, Michael Introduction to electronic devices Electronic apparatus and appliances Elektronisches Bauelement (DE-588)4014360-0 gnd |
| subject_GND | (DE-588)4014360-0 |
| title | Introduction to electronic devices |
| title_auth | Introduction to electronic devices |
| title_exact_search | Introduction to electronic devices |
| title_full | Introduction to electronic devices Michael Shur |
| title_fullStr | Introduction to electronic devices Michael Shur |
| title_full_unstemmed | Introduction to electronic devices Michael Shur |
| title_short | Introduction to electronic devices |
| title_sort | introduction to electronic devices |
| topic | Electronic apparatus and appliances Elektronisches Bauelement (DE-588)4014360-0 gnd |
| topic_facet | Electronic apparatus and appliances Elektronisches Bauelement |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008456668&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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