Electrical characterization of silicon on insulator materials and devices:
Gespeichert in:
Beteiligte Personen: | , |
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Format: | Buch |
Sprache: | Englisch |
Veröffentlicht: |
Boston u.a.
Kluwer
1995
|
Schriftenreihe: | The Kluwer international series in engineering and computer science
305 |
Schlagwörter: | |
Umfang: | XIV, 381 S. graph. Darst. |
ISBN: | 0792395484 |
Internformat
MARC
LEADER | 00000nam a2200000 cb4500 | ||
---|---|---|---|
001 | BV010425059 | ||
003 | DE-604 | ||
005 | 20030317 | ||
007 | t| | ||
008 | 951012s1995 xx d||| |||| 00||| engod | ||
020 | |a 0792395484 |9 0-7923-9548-4 | ||
035 | |a (OCoLC)31658479 | ||
035 | |a (DE-599)BVBBV010425059 | ||
040 | |a DE-604 |b ger |e rakddb | ||
041 | 0 | |a eng | |
049 | |a DE-91 | ||
050 | 0 | |a TK7871.85 | |
082 | 0 | |a 621.3815/2 |2 20 | |
084 | |a ZN 4150 |0 (DE-625)157360: |2 rvk | ||
084 | |a ELT 279f |2 stub | ||
100 | 1 | |a Cristoloveanu, Sorin |e Verfasser |4 aut | |
245 | 1 | 0 | |a Electrical characterization of silicon on insulator materials and devices |c Sorin Cristoloveanu and Sheng S. Li |
246 | 1 | 3 | |a Electrical characterization of silicon-on-insulator materials and devices |
264 | 1 | |a Boston u.a. |b Kluwer |c 1995 | |
300 | |a XIV, 381 S. |b graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 1 | |a The Kluwer international series in engineering and computer science |v 305 | |
650 | 7 | |a Circuitos integrados |2 larpcal | |
650 | 7 | |a Semicondutores |2 larpcal | |
650 | 4 | |a Semiconductors |x Design and construction | |
650 | 4 | |a Semiconductors |x Electric properties | |
650 | 4 | |a Silicon-on-insulator technology | |
650 | 0 | 7 | |a SOI-Technik |0 (DE-588)4128029-5 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Elektrische Stoffeigenschaft |0 (DE-588)4270242-2 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a SOI-Technik |0 (DE-588)4128029-5 |D s |
689 | 0 | |5 DE-604 | |
689 | 1 | 0 | |a Elektrische Stoffeigenschaft |0 (DE-588)4270242-2 |D s |
689 | 1 | |8 1\p |5 DE-604 | |
689 | 2 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
689 | 2 | |8 2\p |5 DE-604 | |
700 | 1 | |a Li, Sheng S. |e Verfasser |4 aut | |
830 | 0 | |a The Kluwer international series in engineering and computer science |v 305 |w (DE-604)BV023545171 |9 305 | |
883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
883 | 1 | |8 2\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-006945769 |
Datensatz im Suchindex
DE-BY-TUM_call_number | 0001 95 A 3046 |
---|---|
DE-BY-TUM_katkey | 662598 |
DE-BY-TUM_location | Mag |
DE-BY-TUM_media_number | 040001858197 |
_version_ | 1821930908560654337 |
any_adam_object | |
author | Cristoloveanu, Sorin Li, Sheng S. |
author_facet | Cristoloveanu, Sorin Li, Sheng S. |
author_role | aut aut |
author_sort | Cristoloveanu, Sorin |
author_variant | s c sc s s l ss ssl |
building | Verbundindex |
bvnumber | BV010425059 |
callnumber-first | T - Technology |
callnumber-label | TK7871 |
callnumber-raw | TK7871.85 |
callnumber-search | TK7871.85 |
callnumber-sort | TK 47871.85 |
callnumber-subject | TK - Electrical and Nuclear Engineering |
classification_rvk | ZN 4150 |
classification_tum | ELT 279f |
ctrlnum | (OCoLC)31658479 (DE-599)BVBBV010425059 |
dewey-full | 621.3815/2 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815/2 |
dewey-search | 621.3815/2 |
dewey-sort | 3621.3815 12 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Book |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02108nam a2200541 cb4500</leader><controlfield tag="001">BV010425059</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20030317 </controlfield><controlfield tag="007">t|</controlfield><controlfield tag="008">951012s1995 xx d||| |||| 00||| engod</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0792395484</subfield><subfield code="9">0-7923-9548-4</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)31658479</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV010425059</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.85</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/2</subfield><subfield code="2">20</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4150</subfield><subfield code="0">(DE-625)157360:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 279f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Cristoloveanu, Sorin</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Electrical characterization of silicon on insulator materials and devices</subfield><subfield code="c">Sorin Cristoloveanu and Sheng S. Li</subfield></datafield><datafield tag="246" ind1="1" ind2="3"><subfield code="a">Electrical characterization of silicon-on-insulator materials and devices</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Boston u.a.</subfield><subfield code="b">Kluwer</subfield><subfield code="c">1995</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XIV, 381 S.</subfield><subfield code="b">graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">The Kluwer international series in engineering and computer science</subfield><subfield code="v">305</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Circuitos integrados</subfield><subfield code="2">larpcal</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semicondutores</subfield><subfield code="2">larpcal</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="x">Design and construction</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="x">Electric properties</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon-on-insulator technology</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">SOI-Technik</subfield><subfield code="0">(DE-588)4128029-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Elektrische Stoffeigenschaft</subfield><subfield code="0">(DE-588)4270242-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">SOI-Technik</subfield><subfield code="0">(DE-588)4128029-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Elektrische Stoffeigenschaft</subfield><subfield code="0">(DE-588)4270242-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="2" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2=" "><subfield code="8">2\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Sheng S.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">The Kluwer international series in engineering and computer science</subfield><subfield code="v">305</subfield><subfield code="w">(DE-604)BV023545171</subfield><subfield code="9">305</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-006945769</subfield></datafield></record></collection> |
id | DE-604.BV010425059 |
illustrated | Illustrated |
indexdate | 2024-12-20T09:53:54Z |
institution | BVB |
isbn | 0792395484 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006945769 |
oclc_num | 31658479 |
open_access_boolean | |
owner | DE-91 DE-BY-TUM |
owner_facet | DE-91 DE-BY-TUM |
physical | XIV, 381 S. graph. Darst. |
publishDate | 1995 |
publishDateSearch | 1995 |
publishDateSort | 1995 |
publisher | Kluwer |
record_format | marc |
series | The Kluwer international series in engineering and computer science |
series2 | The Kluwer international series in engineering and computer science |
spellingShingle | Cristoloveanu, Sorin Li, Sheng S. Electrical characterization of silicon on insulator materials and devices The Kluwer international series in engineering and computer science Circuitos integrados larpcal Semicondutores larpcal Semiconductors Design and construction Semiconductors Electric properties Silicon-on-insulator technology SOI-Technik (DE-588)4128029-5 gnd Elektrische Stoffeigenschaft (DE-588)4270242-2 gnd Halbleiter (DE-588)4022993-2 gnd |
subject_GND | (DE-588)4128029-5 (DE-588)4270242-2 (DE-588)4022993-2 |
title | Electrical characterization of silicon on insulator materials and devices |
title_alt | Electrical characterization of silicon-on-insulator materials and devices |
title_auth | Electrical characterization of silicon on insulator materials and devices |
title_exact_search | Electrical characterization of silicon on insulator materials and devices |
title_full | Electrical characterization of silicon on insulator materials and devices Sorin Cristoloveanu and Sheng S. Li |
title_fullStr | Electrical characterization of silicon on insulator materials and devices Sorin Cristoloveanu and Sheng S. Li |
title_full_unstemmed | Electrical characterization of silicon on insulator materials and devices Sorin Cristoloveanu and Sheng S. Li |
title_short | Electrical characterization of silicon on insulator materials and devices |
title_sort | electrical characterization of silicon on insulator materials and devices |
topic | Circuitos integrados larpcal Semicondutores larpcal Semiconductors Design and construction Semiconductors Electric properties Silicon-on-insulator technology SOI-Technik (DE-588)4128029-5 gnd Elektrische Stoffeigenschaft (DE-588)4270242-2 gnd Halbleiter (DE-588)4022993-2 gnd |
topic_facet | Circuitos integrados Semicondutores Semiconductors Design and construction Semiconductors Electric properties Silicon-on-insulator technology SOI-Technik Elektrische Stoffeigenschaft Halbleiter |
volume_link | (DE-604)BV023545171 |
work_keys_str_mv | AT cristoloveanusorin electricalcharacterizationofsilicononinsulatormaterialsanddevices AT lishengs electricalcharacterizationofsilicononinsulatormaterialsanddevices |
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