Gespeichert in:
| Beteilige Person: | |
|---|---|
| Format: | Buch |
| Sprache: | Englisch |
| Veröffentlicht: |
Weinheim u.a.
VCH
1994
|
| Schlagwörter: | |
| Links: | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006358307&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| Umfang: | XXIV, 530 S. Ill., graph. Darst. |
| ISBN: | 3527290710 |
Internformat
MARC
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| 245 | 1 | 0 | |a The chemistry of metal CVD |c ed. by Toivo T. Kodas ... |
| 264 | 1 | |a Weinheim u.a. |b VCH |c 1994 | |
| 300 | |a XXIV, 530 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
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| 700 | 1 | |a Kodas, Toivo T. |e Sonstige |4 oth | |
| 700 | 1 | |a Hampden-Smith, Mark J. |e Verfasser |4 aut | |
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| DE-BY-UBR_location | UB Lesesaal Chemie / Pharmazie |
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| adam_text | IMAGE 1
CONTENTS
LIST OF CONTRIBUTORS XIX
CHEMICAL ABBREVIATIONS XXI
GENERAL ABBREVIATIONS XXIII
1 INTRODUCTION 1
1.1 INTRODUCTION 4
1.2 CURRENT INTERCONNECT SCHEMES IN SILICON DEVICES 8
1.2.1 METAL-SILICON CONTACTS 8
1.2.2 DIFFUSION BARRIER LAYERS 9
1.2.2.1 SACRIFICIAL DIFFUSION BARRIERS 10
1.2.2.2 STUFFED DIFFUSION BARRIERS 11
1.2.2.3 PASSIVE DIFFUSION BARRIERS 12
1.2.2.4 AMORPHOUS DIFFUSION BARRIERS 13
1.2.3 CONTACT LAYERS 14
1.2.3.1 PLATINUM SILICIDE (PTSI) 16
1.2.3.2 TITANIUM SILICIDE (TISI 2 ) 16
1.2.3.3 COBALT SILICIDE (COSI 2 ) 17
1.2.3.4 OTHER NEAR NOBLE SILICIDES (NISI, PD 2 SI, MOSI 2 ) 17
1.2.4 PRIMARY INTERCONNECTION 17
1.2.4.1 ALUMINUM METALLIZATION 18
1.2.4.2 TUNGSTEN METALLIZATION 19
1.2.4.3 COPPER METALLIZATION 20
1.2.4.4 GOLD METALLIZATION 21
1.3 METALLIZATION REQUIREMENTS FOR THE YEAR 2001 IN SILICON-BASED
TECHNOLOGIES 22
1.3.1 TRENDS IN DEVICE AND PROCESS ARCHITECTURE 22
1.3.2 CVD OF TITANIUM 23
1.3.3 CVD OF METAL SILICIDES 24
1.3.4 CVD OF METAL NITRIDES 25
1.3.5 CVD OF COPPER AND BARRIER LAYERS 25
1.3.6 OTHER METALLIZATIONS 27
1.4 METAL DEPOSITION TECHNIQUES 28
1.4.1 PHYSICAL VAPOR DEPOSITION BY EVAPORATION 28
1.4.2 PHYSICAL VAPOR DEPOSITION BY SPUTTERING 29
1.4.2.1 CONVENTIONAL SPUTTER DEPOSITION TECHNIQUES 29
1.4.2.2 MAGNETRON-BASED SPUTTER DEPOSITION 29
1.4.3 CHEMICAL VAPOR DEPOSITION 30
IMAGE 2
1.5 MANUFACTURING ISSUES IN CVD PROCESSES 33
1.6 SUMMARY AND CONCLUSIONS 37
ACKNOWLEDGMENTS 37
REFERENCES 38
2 CHEMICAL VAPOR DEPOSITION OF ALUMINUM 45
2.1 APPLICATIONS OF ALUMINUM FILMS 48
2.1.1 MICROELECTRONICS 48
2.1.2 METALLIZED POLYMERS 48
2.1.2.1 GAS DIFFUSION BARRIERS 49
2.1.2.2 OPTICAL PROPERTIES 49
2.1.3 ADHESION 50
2.2 COMPARISON BETWEEN PHYSICAL VAPOR DEPOSITION (PVD) AND CHEMICAL
VAPOR DEPOSITION (CVD) OF ALUMINUM 51
2.3 UNDERSTANDING THE CVD PROCESS 52
2.3.1 SURFACE DIFFUSION 52
2.3.2 TRANSPORT PHENOMENA 53
2.3.3 GAS-PHASE REACTIONS 55
2.3.4 SURFACE REACTIVITY 56
2.3.5 NUCLEATION 56
2.3.6 SUMMARY OF ALUMINUM PRECURSORS 57
2.4 CVD USING TRIISOBUTYLALUMINUM 58
2.4.1 EARLY DEVELOPMENTS 58
2.4.2 OPTIMIZATION OF ALUMINUM CVD 60
2.4.2.1 MORPHOLOGY OF ALUMINUM DEPOSITS 60
2.4.2.2 ALLOYS WITH CU AND SI 60
2.4.2.3 NUCLEATION PROMOTERS 61
2.4.2.4 ALUMINUM EPITAXY ON SI 62
2.4.3 SURFACE DECOMPOSITION MECHANISM OF TIB A 63
2.4.4 PATTERNING OF ALUMINUM FILMS 66
2.5 DEPOSITION OF ALUMINUM FROM TRIMETHYLALUMINUM 68
2.5.1 THERMAL ACTIVATION OF TMA 69
2.5.2 PLASMA-ASSISTED ALUMINUM DEPOSITION USING TMA 72
2.5.3 LASER-ASSISTED ALUMINUM DEPOSITION FROM TMA 73
2.6 DEPOSITION OF ALUMINUM FILMS FROM ALANE PRECURSORS 74
2.6.1 SURFACE REACTION MECHANISM OF TMAA 77
2.6.2 DEPOSITION IN COLD-WALL REACTORS USING TMAA 80
2.6.3 DEPOSITION IN HOT-WALL REACTORS USING TMAA 81
2.6.4 ALUMINUM DEPOSITION FROM TEAA 81
2.6.5 ALUMINUM DEPOSITION FROM DMEAA 82
2.6.6 SELECTIVITY OF DEPOSITION USING ALANE PRECURSORS 83
IMAGE 3
2.6.7 ALUMINUM DEPOSITION USING ALUMINABORANE
PRECURSORS 84
2.6.8 GAS-PHASE ALUMINUM PARTICLE FORMATION FROM AMINE ALANES 84
2.7 ALTERNATIVE ALUMINUM ALKYL SOURCES 86
2.7.1 TRIETHYLALUMINUM 86
2.7.2 DIMETHYLALUMINUM HYDRIDE 88
2.7.3 DIETHYLALUMINUM CHLORIDE 90
2.7.4 ALUMINUM MONOCHLORIDE 91
2.8 SUMMARY 92
ACKNOWLEDGMENTS 93
REFERENCES 93
3 CHEMICAL VAPOR DEPOSITION OF TUNGSTEN 105
3.1 INTRODUCTION 108
3.2 PRECURSORS - SYNTHESIS -PROPERTIES I LL
3.2.1 HISTORICAL DEVELOPMENT I LL
3.2.2 TUNGSTEN HALIDES 112
3.2.3 ORGANOMETALLIC PRECURSORS 115
3.2.3.1 HEXAKIS(TRIFLUOROPHOSPHINE)TUNGSTEN [W(PF 3 ) 6 ] 115
3.2.3.2 HEXACARBONYLTUNGSTEN [W(CO) 6 ] 117
3.2.3.3 BIS(ARENE)TUNGSTEN COMPOUNDS 117
3.2.3.4 TRIS(BUTADIENE)TUNGSTEN[W(* 4 -C 4 H 6 ) 3 ] 118
3.2.3.5 TETRAALLYLTUNGSTEN[W(* 3 -C 3 H 5 ) 4 ] 118
3.2.3.6 TRIS(METHYLVINYLKETONE)TUNGSTEN{W[CH 3 C(O)CH=CH 2 ] 3 } 119
3.2.3.7 CYCLOPENTADIENYLMETHYLTRICARBONYLTUNGSTEN [(* 5 -C 5 H 5 )W(CO)
3 CH 3 ] 119
3.2.3.8 BIS(CYCLOPENTADIENYL)DIHYDRIDOTUNGSTEN[(* 5 -C 5 H 5 ) 2 WH 2 ]
119 3.2.3.9 BIS(METHYLCYCLOPENTADIENYL)DIHYDRIDOTUNGSTEN [(* 5 -CH 3 C 5
H 4 )WH 2 ] 120
3.2.3.10 CYCLOPENTADIENYLHYDRIDOTRICARBONYLTUNGSTEN [HW(* 5 -C 5 H 5
)(CO) 3 ] 120
3.2.3.11 CYCLOHEPTATRIENETRICARBONYLTUNGSTEN [(* 6 -C 7 H 8 )W(CO) 3 ]
AND 1,5-CYCLOOCTADIENETETRACARBONYLTUNGSTEN [(L,5-COD)W(CO) 4 ] .. 120
3.3 CHEMICAL VAPOR DEPOSITION (CVD) 121
3.3.1 TUNGSTEN HALIDES AS CVD PRECURSORS 121
3.3.1.1 TUNGSTEN HEXAFLUORIDE (WF 6 ) 1 21
3.3.1.2 TUNGSTEN HEXACHLORIDE (WCL 6 ) 133
3.3.1.3 TUNGSTEN HEXABROMIDE (WBR 6 ) 138
3.3.2 ORGANOMETALLIC COMPOUNDS 138
3.3.2.1 HEXAKIS(TRIFLUOROPHOSPHINE)TUNGSTEN [W(PF 3 ) 6 ] 141
IMAGE 4
3.3.2.2 HEXACARBONYLTUNGSTEN [W(CO) 6 ] 141
3.3.2.3 BIS(BENZENE)TUNGSTEN [W(* 6 -C 6 H 6 ) 2 ] 143
3.3.2.4 TRIS(BUTADIENE)TUNGSTEN [W(* 4 -C 4 H 6 ) 3 ] 144
3.3.2.5 TETRAALLYLTUNGSTEN [W(* 3 -C 3 H 5 ) 4 ] 144
3.3.2.6 TRIS(METHYLVINYLKETONE)TUNGSTEN{W[CH 3 C(O)CH=CH 2 ] 3 } 146
3.3.2.7 CYCLOPENTADIENYLMETHYLTRICARBONYLTUNGSTEN [(* 5 -C 5 H 5 )W(CO)
3 CH 3 ] 146
3.3.2.8 BIS(CYCLOPENTADIENYL)DIHYDRIDOTUNGSTEN [(* 5 -C 5 H 5 ) 2 WH 2 ]
147 3.3.2.9 BIS(METHYLCYCLOPENTADIENYL)DIHYDRIDOTUNGSTEN [(* 5 -CH 3 C 5
H 4 ) 2 WH 2 ] 148
3.3.2.10 CYCLOPENTADIENYLHYDRIDOTRICARBONYLTUNGSTEN [HW(* 5 -C 5 H 5
)(CO) 3 ] , 149
3.3.2.11 CYCLOHEPTATRIENETRICARBONYLTUNGSTEN [(* 6 -C 7 H 8 )W(CO) 3 ]
AND 1,5-CYCLOOCTADIENETETRACARBONYLTUNGSTEN [(L,5-COD)W(CO) 4 ] ... 149
3.4 IN SITU CATALYSIS OF TUNGSTEN DEPOSITION 150
3.5 LASER-ASSISTED CHEMICAL VAPOR DEPOSITION (LCVD) 151
3.5.1 HEXACARBONYLTUNGSTEN W(CO) 6 152
3.5.1.1 MECHANISTIC FINDINGS 152
3.5.1.2 DEPOSITION EXPERIMENTS 153
3.5.2 TUNGSTEN HEXAFIUORIDE (WF 6 ) 155
3.5.2.1 MECHANISTIC AND KINETIC OBSERVATIONS 155
3.5.2.2 DEPOSITION EXPERIMENTS 157
3.6 PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD) 160
3.7 SUMMARY AND OUTLOOK 163
ACKNOWLEDGMENTS 164
REFERENCES 164
4 CHEMICAL VAPOR DEPOSITION OF COPPER FROM COPPER(II) PRECURSORS 175 4.1
INTRODUCTION 178
4.2 HISTORICAL REVIEW 179
4.3 REACTANT CHEMISTRY 182
4.3.1 VOLATILE CU(II) COMPOUNDS 182
4.3.2 REACTANT GEOMETRY 185
4.3.3 SYNTHESIS OF CU(II) PRECURSORS 186
4.3.3.1 CU(HFAC) 2 * NH 2 O (N = 0,1,2) 186
4.3.3.2 SCHIFF-BASE COMPLEXES 187
4.3.4 VOLATILITY 188
4.3.5 REACTION STOICHIOMETRY 190
4.4 ADSORPTION STUDIES 191
4.4.1 ADSORPTION OF CU(II) COMPOUNDS 193
4.4.1.1 MOLECULAR ADSORPTION 193
IMAGE 5
4.4.1.2 DISSOCIATIVE ADSORPTION 193
4.4.1.3 LIGAND GEOMETRY 196
4.4.1.4 REVERSIBILITY 197
4.4.1.5 NON-METALLIC SUBSTRATES 198
4.4.2 ADSORPTION OF CU(I) COMPOUNDS 199
4.4.3 ADSORPTION OF H(HFAC) 200
4.4.4 LIGAND DECOMPOSITION 201
4.5 GROWTH KINETICS 202
4.5.1 DEPOSITION RATES 202
4.5.2 DEPOSITION TEMPERATURE 203
4.5.3 REACTANT CONCENTRATION 204
4.5.4 CARRIER GAS EFFECTS 206
4.5.5 SUBSTRATE SELECTIVITY 208
4.6 FILM PROPERTIES 210
4.6.1 PURITY 210
4.6.2 RESISTIVITY 211
4.6.3 MICROSTRUCTURE 212
4.6.4 OTHER PROPERTIES 214
4.7 REACTION MECHANISM 214
4.8 RATE EXPRESSION 216
4.8.1 RESPONSE SURFACE 216
4.8.2 MECHANISM FITTING 217
4.9 REACTOR DESIGN 219
4.9.1 TRANSPORT EFFECTS 220
4.9.2 REACTOR MODELING 220
4.10 PLASMA-ASSISTED CVD (PACVD) 222
4.10.1 OPERATING VARIABLES 224
4.10.1.1 REACTOR CONFIGURATION 224
4.10.1.2 SUBSTRATE TEMPERATURE 224
4.10.1.3 POWER DENSITY 225
4.10.1.4 REACTANT CONCENTRATION 225
4.10.1.5 CARRIER GAS 226
4.10.2 REACTION MECHANISM 226
4.10.3 FILM PROPERTIES 226
4.10.3.1 PURITY 226
4.10.3.2 RESISTIVITY 227
4.10.3.3 MORPHOLOGY 227
4.10.3.4 CONFORMALITY 228
4.11 LASER-ASSISTED CVD (LCVD) 228
4.11.1 OPERATING VARIABLES 229
4.11.1.1 REACTANTS 229
IMAGE 6
4.11.1.2 GROWTH KINETICS 229
4.11.1.3 SUBSTRATE TEMPERATURE 230
4.11.1.4 LASER INTENSITY 231
4.11.2 FILM PROPERTIES 231
4.11.2.1 PURITY 231
4.11.2.2 RESISTIVITY 231
4.11.2.3 MORPHOLOGY 231
4.11.3 REACTION MECHANISM 232
4.11.3.1 TRANSPORT EFFECTS 233
4.12 SUMMARY 233
ACKNOWLEDGMENTS 235
REFERENCES 235
5 CHEMICAL VAPOR DEPOSITION OF COPPER FROM COPPER(I) PRECURSORS 239
5.1 INTRODUCTION 242
5.2 PRECURSOR DESIGN 244
5.3 SYNTHESIS AND CHARACTERIZATION 249
5.4 PHYSICAL AND CHEMICAL PROPERTIES 251
5.4.1 DEGREE OF OLIGOMERIZATION 251
5.4.2 VAPOR PRESSURES 254
5.5 CHEMICAL VAPOR DEPOSITION 255
5.5.1 REACTOR TYPES 255
5.5.2 DEPOSITION CONDITIONS 256
5.5.3 PHYSICAL PROPERTIES OF FILMS 260
5.6 REACTION STOICHIOMETRY, KINETICS, AND MECHANISMS 264
5.6.1 REACTION PATHWAYS 264
5.6.1.1 THERMALLY-INDUCED DISPROPORTIONATION 264
5.6.1.2 THERMALLY-INDUCED DECOMPOSITION 266
5.6.2 REACTION KINETICS 268
5.6.3 SURFACE REACTION MECHANISMS 271
5.7 SELECTIVITY 275
5.7.1 FACTORS INFLUENCING SELECTIVITY 275
5.7.2 MECHANISM OF SELECTIVITY 281
5.7.3 SELECTIVE DEPOSITION ONTO PATTERNED PTFE SUBSTRATES 286
5.8 CHEMICAL VAPOR DEPOSITION OF COPPER ALLOYS 289
5.9 ETCHING 292
5.9.1 COMPROPORTIONATION 293
5.9.2 COPPER OXIDE FORMATION AND REMOVAL 294
5.9.3 FORMATION OF XCUL 2 295
5.10 SUMMARY AND CONCLUSIONS 295
ACKNOWLEDGMENTS 296
IMAGE 7
REFERENCES 296
6 CHEMICAL VAPOR DEPOSITION OF GOLD AND SILVER 303
6.1 INTRODUCTION 305
6.2 PRECURSORS FOR GOLD CVD 306
6.2.1 SYNTHESIS 306
6.2.2 PHYSICAL PROPERTIES 308
6.3 PRECURSORS FOR SILVER CVD 310
6.3.1 SYNTHESIS 310
6.3.2 PHYSICAL PROPERTIES 313
6.4 DEPOSITION MECHANISMS AND SURFACE REACTIONS DURING CVD OF GOLD 314
6.4.1 THERMAL CVD 314
6.4.2 PHOTOCHEMICAL DEPOSITION 317
6.4.3 PLASMA-ENHANCED CVD 318
6.4.4 ION AND ELETRON BEAM DEPOSITION 318
6.4.5 DEPOSITION RATES 319
6.5 APPLICATIONS FOR AU AND AG DEPOSITION 321
6.5.1 LASER-INDUCED CIRCUIT REPAIR 321
6.5.2 LASER INTERCONNECTION 322
6.5.3 LASER-INDUCED DEPOSITION FOR BONDING 323
6.5.4 PHOTOCHEMICALLY DEPOSITED GOLD FILMS 323
6.6 CONCLUSIONS 324
ACKNOWLEDGMENTS 324
REFERENCES 325
7 CHEMICAL VAPOR DEPOSITION OF PLATINUM, PALLADIUM AND NICKEL 329
7.1 INTRODUCTION 331
7.2 PLATINUM 331
7.3 PALLADIUM 339
7.4 NICKEL 340
7.5 LASER-ASSISTED CVD 342
7.5.1 PLATINUM 344
7.5.2 PALLADIUM 347
7.5.3 NICKEL 348
7.6 ION-ASSISTED AND PLASMA-ASSISTED CVD 350
7.7 OUTLOOK 351
ACKNOWLEDGMENTS 352
REFERENCES 352
8 CHEMICAL VAPOR DEPOSITION OF ASSORTED METALS 357
8.1 INTRODUCTION 360
IMAGE 8
8.2 CHEMICAL AND PHYSICAL PROPERTIES 367
8.2.1 INTRODUCTION 367
8.2.2 PRECURSOR CHARACTERISTICS 369
8.2.2.1 METAL HALIDES 369
8.2.2.2 METAL ALKYLS 372
8.2.2.3 COMPLEXES WITH UNSATURATED ORGANIC LIGANDS: ALKENES, ALKYNES,
ALLYLS, * 5 -CYCLOPENTADIENYLS, * 6 -ARENES AND RELATED COMPLEXES 374
8.2.2.4 METAL CARBONYLS 378
8.2.2.5 METAL TRIFLUOROPHOSPHINES 380
8.2.2.6 METAL SS-DIKETONATES 381
8.2.2.7 METAL ALKOXIDES 383
8.2.3 VAPOR PRESSURES 383
8.3 SYNTHESES 385
8.4 CHEMICAL VAPOR DEPOSITION 385
8.4.1 DEPOSITION CHARACTERISTICS 385
8.4.1.1 INTRODUCTION 385
8.4.1.2 TITANIUM 386
8.4.1.3 ZIRCONIUM 386
8.4.1.4 HAFNIUM 386
8.4.1.5 VANADIUM 386
8.4.1.6 NIOBIUM 387
8.4.1.7 TANTALUM 388
8.4.1.8 CHROMIUM 388
8.4.1.9 MOLYBDENUM 390
8.4.1.10 MANGANESE 392
8.4.1.11 TECHNETIUM 392
8.4.1.12 RHENIUM 392
8.4.1.13 IRON 393
8.4.1.14 RUTHENIUM 394
8.4.1.15 OSMIUM 395
8.4.1.16 COBALT 395
8.4.1.17 RHODIUM 397
8.4.1.18 IRIDIUM 398
8.4.1.19 ZINC 400
8.4.1.20 CADMIUM 400
8.4.1.21 TIN 400
8.4.1.22 LEAD 400
8.4.1.23 HETEROMETALLIC SYSTEMS 401
8.4.2 KINETICS AND MECHANISMS 402
8.4.2.1 METAL HALIDES 402
IMAGE 9
8.4.2.2 METAL ALKYLS 405
8.4.2.3 COMPLEXES WITH UNSATURATED ORGANIC LIGANDS: OLEFINS, ALKYNES,
ALLYLS, METALLOCENES, AND RELATED COMPLEXES .. 407 8.4.2.4 METAL
CARBONYLS 411
8.4.2.5 TRIFLUOROSPHOSPHINES 413
8.4.2.6 METAL SS-DIKETONATES 413
8.4.2.7 BI- AND MULTI-NUCLEAR COMPLEXES 414
8.4.2.8 HETERONUCLEAR COMPLEXES 414
8.4.3 SELECTIVITY 415
8.5 SUMMARY AND CONCLUSIONS 416
ACKNOWLEDGMENTS 417
REFERENCES 417
9 OVERVIEW OF METAL CVD 429
9.1 INTRODUCTION 431
9.2 CLASSIFICATION OF PRECURSORS 431
9.3 BLANKET DEPOSITION: REACTION PATHWAYS 437
9.3.1 INDIVIDUAL PRECURSORS 437
9.3.2 SINGLE-SOURCE PRECURSORS 439
9.4 SELECTIVE DEPOSITION 441
9.4.1 FORMATION OF PATTERNED FILMS 441
9.4.2 SUMMARY OF SELECTIVE CVD METHODS 446
9.4.2.1 INTRINSIC DIFFERENCE IN REACTION RATES 446
9.4.2.2 SACRIFICIAL SOLID-STATE CO-REACTANT 447
9.4.2.3 ACTIVATION OF GROWTH SURFACE 449
9.4.2.4 PHOTOCHEMICAL ACTIVATION OF GROWTH SURFACE 452
9.4.2.5 PASSIVATION OF NON-GROWTH SURFACE 453
9.4.2.6 GETTERING OR REMOVAL OF NUCLEATING SPECIES FROM NON-GROWTH
SURFACE 456
9.4.2.7 PHYSICAL NUCLEATION BARRIER 456
9.5 OVERALL REACTOR BEHAVIOR 458
9.6 PRECURSOR DELIVERY 460
9.6.1 BUBBLERS AND DIRECT VAPORIZATION OF PRECURSORS 460
9.6.2 LIQUID DELIVERY 461
9.6.3 AEROSOL DELIVERY 463
9.7 REACTOR TYPES: HOT-WALL AND COLD-WALL 468
9.8 BOUNDARY LAYERS; FEED-RATE-, SURFACE-REACTION-, AND
DIFFUSION-LIMITED OPERATION; AND TEMPERATURE AND PRESSURE DEPENDENCIES
OF RATE 469
9.8.1 BOUNDARY LAYERS OF VELOCITY, TEMPERATURE, AND REACTANT
CONCENTRATION 470
9.8.2 FEED-RATE-, SURFACE-REACTION-, AND DIFFUSION-LIMITED DEPOSITION
475
IMAGE 10
9.8.2.1 FEED-RATE-LIMITED CVD 477
9.8.2.2 DIFFUSION-AND SURFACE-REACTION-LIMITED CVD 478
9.8.3 PRESSURE AND TEMPERATURE DEPENDENCIES OF RATE 480
9.8.3.1 REACTANT PARTIAL PRESSURE DEPENDENCE OF RATE 480
9.8.3.2 TEMPERATURE DEPENDENCE OF RATE 481
9.9 HOMOGENEOUS GAS-PHASE REACTIONS AND PARTICLE FORMATION 484
9.9.1 PARTICLE FORMATION DURING CVD 484
9.9.2 SIMULTANEOUS PARTICLE DEPOSITION AND CVD 486
9.10 CONCLUSIONS AND FUTURE DIRECTIONS 489
ACKNOWLEDGMENTS 490
REFERENCES 490
APPENDIX 1: EXAMPLES OF CHEMICAL NOMENCLATURE 499
APPENDIX 2: DEFINITION OF TERMS 501
INDEX 515
|
| any_adam_object | 1 |
| author | Hampden-Smith, Mark J. |
| author_facet | Hampden-Smith, Mark J. |
| author_role | aut |
| author_sort | Hampden-Smith, Mark J. |
| author_variant | m j h s mjh mjhs |
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| ctrlnum | (OCoLC)246879255 (DE-599)BVBBV009620333 |
| discipline | Chemie / Pharmazie Physik Werkstoffwissenschaften / Fertigungstechnik |
| format | Book |
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| id | DE-604.BV009620333 |
| illustrated | Illustrated |
| indexdate | 2024-12-20T09:39:21Z |
| institution | BVB |
| isbn | 3527290710 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006358307 |
| oclc_num | 246879255 |
| open_access_boolean | |
| owner | DE-384 DE-29T DE-355 DE-BY-UBR DE-703 DE-91G DE-BY-TUM DE-91 DE-BY-TUM DE-92 DE-20 DE-19 DE-BY-UBM DE-634 DE-83 DE-11 DE-188 |
| owner_facet | DE-384 DE-29T DE-355 DE-BY-UBR DE-703 DE-91G DE-BY-TUM DE-91 DE-BY-TUM DE-92 DE-20 DE-19 DE-BY-UBM DE-634 DE-83 DE-11 DE-188 |
| physical | XXIV, 530 S. Ill., graph. Darst. |
| publishDate | 1994 |
| publishDateSearch | 1994 |
| publishDateSort | 1994 |
| publisher | VCH |
| record_format | marc |
| spellingShingle | Hampden-Smith, Mark J. The chemistry of metal CVD Metall (DE-588)4038860-8 gnd CVD-Verfahren (DE-588)4009846-1 gnd Chemie (DE-588)4009816-3 gnd |
| subject_GND | (DE-588)4038860-8 (DE-588)4009846-1 (DE-588)4009816-3 |
| title | The chemistry of metal CVD |
| title_auth | The chemistry of metal CVD |
| title_exact_search | The chemistry of metal CVD |
| title_full | The chemistry of metal CVD ed. by Toivo T. Kodas ... |
| title_fullStr | The chemistry of metal CVD ed. by Toivo T. Kodas ... |
| title_full_unstemmed | The chemistry of metal CVD ed. by Toivo T. Kodas ... |
| title_short | The chemistry of metal CVD |
| title_sort | the chemistry of metal cvd |
| topic | Metall (DE-588)4038860-8 gnd CVD-Verfahren (DE-588)4009846-1 gnd Chemie (DE-588)4009816-3 gnd |
| topic_facet | Metall CVD-Verfahren Chemie |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006358307&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT kodastoivot thechemistryofmetalcvd AT hampdensmithmarkj thechemistryofmetalcvd |
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| Signatur: | 0301 0019 A 155 |
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| Exemplar 1 | Ausleihbar Am Standort |
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| Signatur: | 0826 G.258 |
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| Exemplar 1 | Dauerhaft ausgeliehen Ausgeliehen |