Physics of semiconductor devices:
Gespeichert in:
| Beteilige Person: | |
|---|---|
| Format: | Buch |
| Sprache: | Englisch |
| Veröffentlicht: |
Englewood Cliffs, NJ
Prentice Hall
1990
|
| Schriftenreihe: | Prentice Hall series in solid state physical electronics
|
| Schlagwörter: | |
| Links: | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005045945&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| Umfang: | XXIV, 680 S. Ill., graph. Darst. |
| ISBN: | 0136664962 |
Internformat
MARC
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| 100 | 1 | |a Shur, Michael |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Physics of semiconductor devices |c Michael Shur |
| 264 | 1 | |a Englewood Cliffs, NJ |b Prentice Hall |c 1990 | |
| 300 | |a XXIV, 680 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Prentice Hall series in solid state physical electronics | |
| 650 | 4 | |a Semiconductores | |
| 650 | 4 | |a Transistores de efecto de campo metal-óxido semiconductor | |
| 650 | 4 | |a Transistores de unión | |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4143413-4 |a Aufsatzsammlung |2 gnd-content | |
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| 689 | 0 | |5 DE-604 | |
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| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-005045945 | |
Datensatz im Suchindex
| _version_ | 1819344436572717056 |
|---|---|
| adam_text | Contents
LIST OF SYMBOLS
xiii
PREFACE
xxi
CHAPTER
1.
BASIC SEMICONDUCTOR PHYSICS
1
1-І.
Introduction
1
1-2.
Quantum Mechanical Concepts and Atomic States.
2
1-3.
Chemical Bonds.
10
1-4.
Solid-State Structure.
16
1-5.
Band Structure.
26
1-6.
Electrons and Hole: Semiconductor Statistics.
42
1-7.
Intrinsic, Extrinsic and Compensated Semiconductors.
54
1-8.
Lattice Vibrations.
66
1-9.
Electron and Hole Mobilities and Drift Velocities.
73
1-10.
Hall Effect and
Magnetoresistance. 79
J-ll. Semiconductor Equations Based on the Field Dependent Velocity
and Diffusion.
86
1-12.
Quasi-Fermi Levels. Generation and Recombination of Carriers.
93
* 1-13.
Boltzmann Transport Equation and Scattering Rates.
102
*1-14. Monte Carlo Simulation.
112
VII
v¡¡¡
Contents
*1-15.
Phenomenological Transport
Equations
For High Electric Fields.
124
References.
28
Problems.
131
CHAPTER
2.
p
-η
JUNCTIONS, SCHOTTKY BARRIER
JUNCTIONS, HETEROJUNCTIONS AND OHMIC
CONTACTS
140
2-1.
Introduction.
140
2-2.
p
-η
Junction Under Zero Bias Condition
141
2-3.
Current-Voltage Characteristics of an Ideal
p
-η
Junction
(The Diode Equation).
152
2-4.
Generation and Recombination Currents.
163
2-5.
Depletion Capacitance.
169
2-6.
Diffusion Capacitance and Equivalent Circuit of a
p
-η
Diode.
172
2-7.
Tunneling and Tunnel Diodes.
176
2-8.
Junction Breakdown.
182
2-8-1.
Breakdown Mechanisms.
182
*2-8-2. Impact Ionization and Avalanche Breakdown
185
2-9.
Schottky Barriers.
194
2-Ю.
Current-Voltage Characteristics of Schottky Diodes.
204
2-10-1.
Thermionic Emission Model.
204
2-10-2.
Current-Voltage Characteristics: Thermionic-Field
Emission and Field Emission.
207
2-10-3.
Small-Signal Circuit of a Schottky Diode.
209
2-11.
Ohmic Contacts.
210
2-12.
Heterojunctions.
220
References.
225
Problems.
229
CHAPTERS. BIPOLAR JUNCTION TRANSISTORS
238
3-І.
Principle of Operation.
238
3-2.
Minority Carrier Profiles in a Bipolar Junction Transistor.
246
3-3.
Current Components and Current Gain.
251
3-4.
Base Spreading Resistance and Emitter Current Crowding in
Bipolar Junction Transistors.
260
3-5.
Effects of Non-Uniform Doping in the Base Region: Graded Base
Transistors.
263
3-6.
Output Characteristics of Bipolar Junction Transistors and Early
Effect.
266
3-7.
Ebers-Moll Model.
270
3-8.
Gummel-Poon Model.
272
3-9.
Breakdown in Bipolar Junction Transistors.
278
3-10.
Operating Point and Small Signal Equivalent Circuits
285
Contents
¡x
3-11. Bipolar
Junction
Transistor
as a Small Signal Amplifier: Cutoff
Frequencies.
294
3-12.
Bipolar Junction Transistor as a Switch.
300
3-13.
Bipolar Junction Transistors in Integrated Circuits.
304
3-14.
Heterojunction Bipolar Transistors.
310
References.
318
Problems.
321
CHAPTER
4.
FIELD EFFECT TRANSISTORS
328
4-1.
Introduction.
328
4-2.
Surface Charge in Metal Oxide Semiconductor Capacitor.
332
4-3.
Capacitance-Voltage Characteristics of an MIS Structure.
343
4-4.
Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs).
Gradual Channel Approximation and Charge Control Model.
353
4-4-1.
Principle of Operation.
353
4-4-2.
Gradual Channel Approximation and Constant
Mobility Model.
354
4-4-3.
Charge Control Model.
361
4-4-4.
Effect of Source and Drain Series Resistances.
364
4-5.
Velocity Saturation Effects in MOSFETs.
366
4-6.
Short Channel and
Nonideal
Effects in MOSFETs.
376
4-7.
Subthreshold Current in MOSFETs.
385
4-8.
MOSFET Capacitances and Equivalent Circuit.
390
4-9.
Enhancement- and Depletion-Mode MOSFETs. Complementary
MOSFETs (CMOS) and Silicon on Sapphire.
396
4-10.
Metal Semiconductor Field-Effect Transistors.
405
4-11.
Heterostructure Field-Effect Transistors.
418
4-12.
Amorphous Silicon Thin-Film Transistors.
437
4-13.
Amorphous Silicon High-Voltage Thin-Film Transistors.
447
4-14.
Amorphous Silicon Double-Injection Field-Effect Transistors.
451
References.
455
Problems.
461
CHAPTERS. PHOTONIC DEVICES
476
5-1.
Introduction.
476
5-2.
Crystalline Solar Cells.
479
5-3.
Amorphous Silicon Solar Cells.
490
5-4.
Photodetectors.
501
5-5.
Light Emission in Semiconductors: Electroluminescence and
Light Emitting Diodes.
509
5-6.
Semiconductor Lasers.
516
5-7.
Integrated Optoelectronics.
530
References.
538
Problems.
541
x
Contents
CHAPTER
6.
TRANSFERRED-ELECTRON DEVICES AND
AVALANCHE DIODES
546
6-1.
Introduction.
546
6-2.
Ridley-Watkins-Hilsum-Gunn Effect.
547
6-3.
Transferred Electron Devices.
560
6-4.
IMPATT, TRAPATT, and BARITT Diodes.
569
References.
576
Problems.
578
CHAPTER
7.
TRANSISTOR STRUCTURES
579
7-1.
Electron Transport in Short Devices and Compound Semiconductor
Technology.
579
7-2.
Permeable Base Transistors.
584
7-3.
Planar Doped Barrier Devices.
588
7-4.
Real Space Transfer and Hot Electron Injection Transistors.
593
7-5. Superlattice
Devices.
597
7-6.
Resonant Tunneling Devices.
603
References.
612
Problems.
615
APPENDICES
617
Introduction. 617
Al. Some
Important Physical Constants.
618
A2. Greek Alphabet.
618
A3.
Units.
619
A4.
Magnitude Prefixes.
620
A5. Unit Conversion Factors.
620
A6. Properties of Silicon (Si).
620
A7. Properties of Germanium (Ge).
621
A8. Properties of Gallium Arsenide (GaAs).
622
A9. Properties of Aluminum Gallium Arsenide
(AlxGa,_xAs).
623
AIO.
Properties of Indium Phosphide.
624
All. Properties of Indium Arsenide (InAs).
624
A12. Properties of Indium Gallium Arsenide (InxGa,_xAs).
625
A
13.
Properties of Diamond.
625
A14. Properties of Silicon Carbide (SiC).
626
A15. Properties of Zinc
Selenide (ZnSe).
626
A16. Properties of Zinc Telluride (ZnTe).
627
A17. Properties of Amorphous Silicon.
627
A18. Properties of Silicon Dioxide (SiO2).
627
A
19.
Properties of Silicon Nitride Si3N4.
628
A20. Hyperbolic Functions.
628
A21. Fermi Integrals.
528
A22. Overlap Factor and Scattering Rates.
629
Contents xi
A23.
Momentum
Relaxation Times
and Low-Field Mobilities.
634
A24. Device and Circuit Simulation
Programs.
640
A25.
Relationship Between
h-Parameters and Parameters of
Τ
Equivalent Circuit and
-π
Equivalent Circuit.
650
A26. Data Sheets for Motorola 2N2219A General-Purpose Silicon n-p-n
Transistors.
651
A27. Periodic Table of Elements.
653
INDEX
667
|
| any_adam_object | 1 |
| author | Shur, Michael |
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| genre | (DE-588)4143413-4 Aufsatzsammlung gnd-content |
| genre_facet | Aufsatzsammlung |
| id | DE-604.BV007688714 |
| illustrated | Illustrated |
| indexdate | 2024-12-20T09:09:49Z |
| institution | BVB |
| isbn | 0136664962 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-005045945 |
| oclc_num | 246814455 |
| open_access_boolean | |
| owner | DE-355 DE-BY-UBR DE-83 DE-11 |
| owner_facet | DE-355 DE-BY-UBR DE-83 DE-11 |
| physical | XXIV, 680 S. Ill., graph. Darst. |
| publishDate | 1990 |
| publishDateSearch | 1990 |
| publishDateSort | 1990 |
| publisher | Prentice Hall |
| record_format | marc |
| series2 | Prentice Hall series in solid state physical electronics |
| spellingShingle | Shur, Michael Physics of semiconductor devices Semiconductores Transistores de efecto de campo metal-óxido semiconductor Transistores de unión Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4143413-4 |
| title | Physics of semiconductor devices |
| title_auth | Physics of semiconductor devices |
| title_exact_search | Physics of semiconductor devices |
| title_full | Physics of semiconductor devices Michael Shur |
| title_fullStr | Physics of semiconductor devices Michael Shur |
| title_full_unstemmed | Physics of semiconductor devices Michael Shur |
| title_short | Physics of semiconductor devices |
| title_sort | physics of semiconductor devices |
| topic | Semiconductores Transistores de efecto de campo metal-óxido semiconductor Transistores de unión Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | Semiconductores Transistores de efecto de campo metal-óxido semiconductor Transistores de unión Halbleiter Aufsatzsammlung |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005045945&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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